National Institute of Technology, Silchar

About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Control theory & Electric power system. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.

Comparative performance of different energy storage devices in AGC of multi-source system including geothermal power plant

Abstract: This paper highlights an attempt of comparing the performance of several energy storage (ES) devices such as battery ES, flywheel ES, capacitive ES, superconducting magnetic ES, ultra-capacitors, and redox flow batteries (RFBs) in automatic generation control of an interconnected system. The considered system comprises conventional thermal, hydro, wind, and solar photovoltaic generations wherein a geothermal power plant (GTPP) is also incorporated. The thermal and hydro systems are provided with appropriate generation rate constraints. A new fractional order (FO) cascade controller named as the FO proportional-integral–FO proportional-integral-derivative (FOPI-FOPID) is proposed as a secondary controller, and its performance is compared with the commonly used classical controllers. A powerful stochastic algorithm called the Sine Cosine Algorithm has been used to optimize the controller gains and other parameters. Analyses of the dynamic responses reveal the superiority of FOPI-FOPID over the others in terms of settling time, peak deviation, and magnitude of oscillation. The effect due to introduction of GTPP has been examined, and the responses disclose that integration of GTPP leads to better dynamics. The comparison of performances of various ES devices in the presence of the FOPI-FOPID controller highlights the predominance of RFB over others.

N+ Pocket Doped Vertical TFET Based Dielectric-Modulated Biosensor Considering Non-Ideal Hybridization Issue: A Simulation Study

Abstract: A comprehensive evaluation of sensitivity between double gate tunnel FET and n+ pocket doped vertical tunnel FET based label-free biosensors is reported in this work. Both the biosensors possess nanogaps on the left and right of the fixed dielectric (HfO2) which enhances the capture area of the biosensors. Comparison has been made on the TCAD simulation studies of their sensitivities considering neutral/charged biomolecules having different dielectric constants. The sensitivity of VB is found to be approximately 104 times the sensitivity of DB due to its current conduction in both vertical and lateral directions. Also, the effects of steric hindrance and irregular position of probes/receptors are analyzed to understand the non-ideal behavior of the sensors. Sensitivity is calculated from the simulated results for four different cases of partially filled nanogaps – decreasing, increasing, concave and convex profiles. It rises by about 5–7% when filled factor is increased from 40 to 66%. Finally, benchmarking of proposed VB is done against other published literature as it gives better result in terms of sensitivity.

Optical and electrical studies on spray deposited ZnO thin films

Abstract: ZnO thin films were prepared by spray pyrolytic decomposition of zinc acetate onto a glass substrate. These films were analyzed for the optical and electrical properties. Optical studies show that in these films the electronic transition is of the direct transition type. The optical energy gap for the films of different thicknesses is estimated to be in the range 2.98 – 3.09 eV. Electrical studies indicate that the films exhibit thermally activated electronic conduction and the activation energies are found to be dependent on the film thickness. The complex impedance measurements were carried out over a wide range of frequencies at room temperature (300 K). All the impedance spectra contain only a single arc, but the arc has a non-zero intersection with the real axis in the high frequency region. Also, the arc has its centre lying below with the real axis which indicates the multirelaxation behavior of the films. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)