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Institution

National Institute of Technology, Silchar

EducationSilchar, Assam, India
About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Computer science & Control theory. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors investigated the heat transfer and pressure drop characteristics for two different channels, namely, raccoon and serpentine for different values of amplitude and wavelength of the wall waviness.

65 citations

Journal ArticleDOI
TL;DR: In this article, the performance of a Kirloskar single cylinder direct injection compression ignition water cooled diesel engine having capacity 5.2kW was analyzed using microalgae oil and methyl ester.
Abstract: The microalgae oil obtained from chlorella protothecoides was converted to microalgae oil methyl ester using transesterification process. The physical and chemical properties of microalgae oil and microalgae oil methyl ester were tested and it was observed that chlorella protothecoides oil and microalgae oil methyl ester can meet the ASTM standards for the characteristics tested. In this research work performance, combustion and emission parameters were analyzed on a Kirloskar single cylinder direct injection compression ignition water cooled diesel engine having capacity 5.2 kW fueled with diesel, microalgae oil and microalgae oil methyl ester. The engine showed the reduction in emission of CO, UBHC, NO x and smoke opacity as compared to those of diesel when fueled with microalgae oil and microalgae oil methyl ester. A general trend of decrease in the brake thermal efficiency with the use of microalgae oil and microalgae oil methyl ester was observed.

65 citations

Journal ArticleDOI
TL;DR: In this paper, the authors deal with the numerical simulation of double cavity scramjet combustor by using two equation standard k-e turbulence model and finite-rate/eddy-dissipation reaction models which is again coupled with Reynolds-Averaged Navier-Stokes (RANS) equations to investigate the influence of variation of inlet boundary condition of air as well as H2 fuel on the combustion flow-field of scramjet engine subsequently.

65 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of variation of oxide thickness on gate capacitance for single-and double-gated FETs was analyzed through an exhaustive simulation, and it was shown that in the nanometer regime quantum capacitance is the deciding factor in calculating the gate capacity of a FET.
Abstract: Carbon nanotube-based FET devices are getting more and more importance today because of their high channel mobility and improved gate capacitance against gate voltage. This paper compares and analyzes the effect of variation of oxide thickness on gate capacitance for single gate MOSFET, double gate MOSFET, silicon nanowire FET, and CNTFET devices through an exhaustive simulation. It is seen that in nanometer regime quantum capacitance is the deciding factor in calculating the gate capacitance of a FET device. CNTFET and silicon nanowire FET have a favorable characteristics of decreasing gate capacitance with the decrease in oxide thickness in deep nanometer regime, which is not possible to get in a single gate or a double gate MOSFET. This decrease in gate capacitance is observed at a gate voltage of 0.5 V and above which leads to reduced propagation delay and lower leakage compared to MOSFET devices.

65 citations

Journal ArticleDOI
TL;DR: It is proved that the reported sign of (+, +, −, −) Lyapunov exponents is actually (+,+, 0, −), which is the only quantitative measure for the existence of hyperchaos.
Abstract: This review paper aims at answering a basic question on the sign of Lyapunov exponents A few recent papers reported hyperchaotic system having the sign of Lyapunov exponents as (+, +, −, −) Such (+, +, −, −) sign of Lyapunov exponents is in contradiction with the well known (+, +, 0, −) sign of Lyapunov exponents for a 4-D hyperchaotic system This paper thus discusses various issues related to Lyapunov exponents and proves that the reported sign of (+, +, −, −) Lyapunov exponents is actually (+, +, 0, −) or (+, 0, −, −) This clarification is very important and essential since Lyapunov exponents are the only quantitative measure for the existence of hyperchaos Three different algorithms are used for calculating the Laypunov exponents to prove the actual sign of Lyapunov exponents for a hyperchaotic system

64 citations


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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202335
2022149
2021947
2020742
2019596
2018451