National Institute of Technology, Silchar

About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Computer science & Control theory. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.

A material selection approach using the TODIM (TOmada de Decisao Interativa Multicriterio) method and its analysis

Abstract: Quality, performance, reliability, cost etc. of any product are all affected by the material being used to manufacture it. Hence, it becomes imperative to select an appropriate material for a successful product. Material selection involves a complex interaction between component function, material type, process, shape and cost. The designer must have a broad understanding of various properties of materials and their processing characteristics. No two materials have the same properties, and the choice is usually decided by the best possible combination of material properties and economic factors providing an optimal solution. In this paper, the best suited materials for two products, i. e. engine flywheel and metallic gear, are selected applying an almost unexplored multi-criteria decision making tool in the form of the TODIM (TOmada de Decisao Interativa Multicriterio, which means in Portuguese “interactive and multi-criteria decision making”) method. The derived results corroborate those obtaine...

Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulation

Abstract: A comparative analysis of the trigate fin-shaped field-effect transistor (FinFET) and quantum FinFET (QFinFET) is carried out by using density gradient quantization models in the Synopsys three-dimensional (3-D) technology computer-aided design (TCAD) platform. The gate dielectric stack comprising 0.5 nm SiO2 (k = 3.9) and 2 nm HfO2 (k = 22) contributes to an effective oxide thickness of 0.86 nm and is kept constant throughout the study. The results demonstrate that the QFinFET can overcome the limitations of current FinFET devices when scaling down to the atomic level. An analytical model including quantum-mechanical effects for evaluation of the drain current of the FinFET is established and validated using the TCAD software. The degradation in the drive current with downscaling of the fin thickness for the trigate FinFET and the increase in the drive current for the QFinFET are presented. The results are improved by taking into account different channel lengths and body thicknesses to estimate the drain current–gate voltage and gate capacitance–gate voltage characteristics for both the trigate FinFET and QFinFET. The drain-induced barrier lowering and subthreshold swing are also analyzed for the trigate FinFET and QFinFET at different technology nodes, revealing excellent characteristics. It is clearly established that the QFinFET can overcome the limitations faced by current FinFET devices when scaling the silicon down to the atomic level and may represent the next generation of FinFET devices.

Numerical study of the vortex-induced electroosmotic mixing of non-Newtonian biofluids in a nonuniformly charged wavy microchannel: Effect of finite ion size.

Abstract: We propose a micromixer for obtaining better efficiency of vortex induced electroosmotic mixing of non-Newtonian bio-fluids at a relatively higher flow rate, which finds relevance in many biomedical and biological applications To represent the rheology of non-Newtonian fluid, we consider the Carreau model in this study, while the applied electric field drives the constituent components in the micromixer We show that the spatial variation of the applied field, triggered by the topological change of the bounding surfaces, upon interacting with the non-uniform surface potential gives rise to efficient mixing as realized by the formation of vortices in the proposed micromixer Also, we show that the phase-lag between surface potential leads to the formation of asymmetric vortices This behavior offers better mixing performance following the appearance of undulation on the flow pattern Finally, we establish that the assumption of a point charge in the paradigm of electroosmotic mixing, which is not realistic as well, under-predicts the mixing efficiency at higher amplitude of the non-uniform zeta potential The inferences of the present analysis may guide as a design tool for micromixer where rheological properties of the fluid and flow actuation parameters can be simultaneously tuned to obtain phenomenal enhancement in mixing efficiency

SVM-based robust image watermarking technique in LWT domain using different sub-bands

Abstract: In this paper, a robust image watermarking system in lifting wavelet transform domain using different sub-bands has been proposed. SVM classifier is used during watermark extraction to obtain improved robustness under diverse attack conditions. In this work, a detailed analysis of imperceptibility and robustness performance with the use of different sub-bands has been presented. The performance on different sub-band has been analyzed so as to maximize the robustness against different attacks keeping imperceptibility at adequate level. Robustness is observed against various attacks such as noising attacks, denoising attacks, image processing attacks, lossy compression attacks and geometric attacks. It is seen that high-frequency sub-band provides better invisibility, whereas variation of robustness performance on different sub-bands depend on the type of attacks. It is observed from the performance analysis that all the attacks do not have exactly same effect on the frequency content of the image. For instance, noising attack affects every frequency component of the image almost equally, whereas the embedding in high-frequency band makes the system fragile to lossy compression attack. The algorithm is tested on a large image database to observe the variation in the performance of the system. Comparative analysis suggests that the proposed sub-band provides improved performance over some benchmark methods in most of the cases.