Institution
National Institute of Technology, Silchar
Education•Silchar, Assam, India•
About: National Institute of Technology, Silchar is a education organization based out in Silchar, Assam, India. It is known for research contribution in the topics: Control theory & Electric power system. The organization has 1934 authors who have published 4219 publications receiving 41149 citations. The organization is also known as: NIT Silchar.
Papers published on a yearly basis
Papers
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TL;DR: A novel, efficient, and high-yielding method was developed for the synthesis of 3-sulfenylindoles via a DBU-based ionic liquid promoted sulfenylation of indoles using sulfonyl hydrazides as a thiol surrogate.
Abstract: A novel, efficient, and high-yielding method was developed for the synthesis of 3-sulfenylindoles via a DBU-based ionic liquid promoted sulfenylation of indoles using sulfonyl hydrazides as a thiol surrogate. The environmentally friendly procedure, easy operation and mild reaction conditions enable the tolerance of a wide scope of functionalities as well as high reaction efficiency. The synthetic procedure is suitable for both N-protected or unprotected indoles.
40 citations
TL;DR: In this paper, the synthesis of uniform size, spherical carbon nano beads (CNB) using chemical vapour deposition (CVD) method is highlighted, and the synthesized CNB are introduced into epoxy matrix by ultrasonic dual mode mixing route to produce CNB/epoxy nanocomposite.
40 citations
TL;DR: In this article, a two-dimensional analytical gate threshold voltage model for a heterojunction silicon-on-insulator tunnel field effect transistor structure with gate oxide overlap is developed, where the infinite series method with suitable boundary conditions is used to solve the 2D Poisson's equation for surface potential.
Abstract: A two-dimensional (2D) analytical gate threshold voltage model for a heterojunction silicon-on-insulator tunnel field-effect transistor structure with gate oxide overlap is developed. The infinite series method, with suitable boundary conditions, is used to solve the 2D Poisson’s equation for surface potential. The surface potential is used to develop the expression for the proposed analytical threshold voltage in closed form. Developed threshold voltage is verified for different gate length, drain voltage, oxide thickness, and gate dielectric materials against Synopsys Technology Computer-Aided Design numerical simulation results and found to predict the simulated results accurately.
40 citations
TL;DR: In vitro bioactivity analysis confirms the formation of bone like apatite in the scaffold surface after 28 days of SBF immersion, indicating that the developed scaffold has the potential to be effectively used in bone tissue engineering applications.
40 citations
TL;DR: In this paper, the beam-column subassemblies with GFRP were used to eliminate the weakness arising out of construction joint in multi-storied buildings, and their performances were compared with corresponding un-retrofitted specimens under cyclic loading.
39 citations
Authors
Showing all 2010 results
| Name | H-index | Papers | Citations |
|---|---|---|---|
| Abdullah Gani | 59 | 279 | 15355 |
| Subhransu Ranjan Samantaray | 39 | 167 | 4880 |
| Subhasish Dey | 39 | 220 | 4755 |
| Bithin Datta | 37 | 158 | 3932 |
| Arindam Ghosh | 33 | 248 | 6091 |
| Raghavan Murugan | 33 | 126 | 3838 |
| Md. Ahmaruzzaman | 32 | 113 | 6590 |
| Deepak Puthal | 31 | 149 | 3213 |
| Sivaji Bandyopadhyay | 31 | 310 | 4436 |
| Ibrar Yaqoob | 30 | 77 | 7858 |
| Lalit Chandra Saikia | 29 | 121 | 3154 |
| Krishnamurthy Muralidhar | 28 | 218 | 2972 |
| Sudip Dey | 28 | 155 | 1956 |
| Krishna Murari Pandey | 27 | 262 | 2455 |
| Shailendra Jain | 27 | 128 | 3907 |