National Physical Laboratory

About: National Physical Laboratory is a facility organization based out in London, United Kingdom. It is known for research contribution in the topics: Dielectric & Thin film. The organization has 7615 authors who have published 13327 publications receiving 319381 citations.

The Nature of the Electronic States in Disordered One-Dimensional Systems

Abstract: We consider an electron moving in the field of a one-dimensional infinite chain of identical potentials separated by regions of zero potential, the lengths s of these regions being distributed according to a probability density function p(8) . If we define the reduced phase of a real solution of the wave equation as the principal value of arctan ( — ψ9/kψ ) and є i as the reduced phase at the point x i immediately to the left of the i th atomic potential, it is shown for all bounded p(s) and sufficiently high electron energies that the є i are distributed according to a probability density function which depends on the direction of integration from a specified homogeneous boundary condition. This result is shown to imply that the eigenfunctions for such systems are localized in the sense that the envelope of such a function decays on average in an exponential manner on either side of some region. An analytical calculation for a random chain of δ-functions gives the decay of the nodes explicitly for high energies, and numerical calculations of the decay for a liquid model are presented. Further support for the theory is provided by computer calculations of some of the eigenfunctions of a chain of 1000 randomly placed δ-functions.

Low field magnetotransport in manganites

Abstract: The perovskite manganites with generic formula RE1?xAExMnO3 (RE = rare earth, AE = Ca, Sr, Ba and Pb) have drawn considerable attention, especially following the discovery of colossal magnetoresistance (CMR). The most fundamental property of these materials is strong correlation between structure, transport and magnetic properties. They exhibit extraordinary large magnetoresistance named CMR in the vicinity of the insulator?metal/paramagnetic?ferromagnetic transition at relatively large applied magnetic fields. However, for applied aspects, occurrence of significant CMR at low applied magnetic fields would be required. This review consists of two sections: in the first section we have extensively reviewed the salient features, e.g.?structure, phase diagram, double-exchange mechanism, Jahn?Teller effect, different types of ordering and phase separation of CMR manganites. The second is devoted to an overview of experimental results on CMR and related magnetotransport characteristics at low magnetic fields for various doped manganites having natural grain boundaries such as polycrystalline, nanocrystalline bulk and films, manganite-based composites and intrinsically layered manganites, and artificial grain boundaries such as bicrystal, step-edge and laser-patterned junctions. Some other potential magnetoresistive materials, e.g.?pyrochlores, chalcogenides, ruthenates, diluted magnetic semiconductors, magnetic tunnel junctions, nanocontacts etc, are also briefly dealt with. The review concludes with an overview of grain-boundary-induced low field magnetotransport behavior and prospects for possible applications.

Effect of Crystallization on the Electronic Energy Levels and Thin Film Morphology of P3HT:PCBM Blends

Abstract: We study thin films of semi-crystalline regioregular poly(3-hexylthiophene) (RR-P3HT) and amorphous regiorandom P3HT (RRa-P3HT) in blends with [6,6]-phenyl C61 butyric acid methyl ester (PCBM). Ultraviolet and (angle-resolved) X-ray photoelectron spectroscopy techniques together with absorption, photoluminescence and optical microscopy were used to measure electronic energy levels, vertical chemical compositions and optical properties of these films. We find that ordering the P3HT chains raises the highest occupied molecular orbital (HOMO) energy level of P3HT thin films (reducing ionization potential) and that the ordering of P3HT chains occurs preferentially at the film−air interface in RR-P3HT:PCBM thin films. This leads to a vertical phase separation between P3HT and PCBM molecules, which may be undesirable for conventional P3HT:PCBM solar cells.