Institution
National Physical Laboratory
Facility•London, United Kingdom•
About: National Physical Laboratory is a facility organization based out in London, United Kingdom. It is known for research contribution in the topics: Dielectric & Thin film. The organization has 7615 authors who have published 13327 publications receiving 319381 citations.
Papers published on a yearly basis
Papers
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Institut national de la recherche scientifique1, University of Sussex2, Swinburne University of Technology3, University of Auckland4, Georgia Institute of Technology5, Centre national de la recherche scientifique6, University of Brescia7, National Physical Laboratory8, Tsinghua University9, Purdue University10, University of Electronic Science and Technology of China11
TL;DR: In this paper, a review of optical frequency combs with a large spectrum is presented, where the frequency and the phase do not vary and are completely determined by the source physical parameters.
543 citations
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TL;DR: In this paper, the effect of defects induced by ion bombardment on the Raman spectrum of single-layer molybdenum disulfide was determined by using density functional theory to calculate the phonon dispersion curves.
Abstract: We determine the effect of defects induced by ion bombardment on the Raman spectrum of single-layer molybdenum disulfide. The evolution of both the linewidths and frequency shifts of the first-order Raman bands with the density of defects is explained with a phonon confinement model, using density functional theory to calculate the phonon dispersion curves. We identify several defect-induced Raman scattering peaks arising from zone-edge phonon modes. Among these, the most prominent is the $\mathrm{LA}(M)$ peak at $\ensuremath{\sim}227\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}1}$ and its intensity, relative to the one of first-order Raman bands, is found to be proportional to the density of defects. These results provide a practical route to quantify defects in single-layer $\mathrm{Mo}{\mathrm{S}}_{2}$ using Raman spectroscopy and highlight an analogy between the $\mathrm{LA}(M)$ peak in $\mathrm{Mo}{\mathrm{S}}_{2}$ and the $D$ peak in graphene.
537 citations
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TL;DR: In this paper, Lamb's method has been adapted to furnish definite-integral representations of the field at an arbitrary point in a semi-infinite isotropic solid, due to prescribed periodic stresses on the free surface, the particular stress distributions considered here being such as would be produced by certain types of electro-mechanical transducers.
Abstract: The problem of wave-motion in a semi-infinite solid has been studied by several workers in connexion with seismological disturbances. In a classic paper (1904), Lamb investigated the propagation of vibrations over the surface of a semi-infinite isotropic solid, due to the application of force at a point or along a line in the free surface. A related problem is studied by Lapwood (I 949) who considers the case of an infinitely long dilating line-source situated parallel to and just below the free surface. Both authors obtain solutions in the form of definite integrals which they evaluate asymptotically to obtain the various components of the field at points on or near the surface at large distances from the source. In a more recent paper by Margery Newlands (I 952) this work has been extended to include the case of a source situated in a thin surface layer and propagating into a semi-infinite solid. The static problem of the distortion of a semi-infinite solid by stresses on the free surface was investigated by Boussinesq in a series of papers (1878-83) and by Love (1929). In the present paper Lamb's method has been adapted to furnish definite-integral representations of the field at an arbitrary point in a semi-infinite isotropic solid, due to prescribed periodic stresses on the free surface, the particular stress distributions considered here being such as would be produced by certain types of electro-mechanical transducer. Asymptotic formulae are obtained for the field at infinity, and the results for the various displacement components are presented in the form of polar diagrams. To obtain the radiation impedance integral expressions are derived for the mean displacement over the part of the surface which lies beneath the source; these expressions have been evaluated by numerical quadrature in a number of cases and a table shows the corresponding values of the radiation impedance.
516 citations
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TL;DR: In this article, the authors derived approximate formulae involving the LCAO coefficients for the three contributions due to the electron orbital effect, dipolar interaction between nuclear and electron spins and the Fermi contact effect.
Abstract: Molecular orbital theory in the LCAO form is used in a study of the indirect coupling between nuclear spins through the electronic environment. By retaining only the largest one-centre integrals, approximate formulae involving the LCAO coefficients are derived for the three contributions due to (1) the electron orbital effect, (2) the dipolar interaction between nuclear and electron spins and (3) the Fermi contact effect. The theory is then applied in detail to the coupling between directly bonded atoms, when the contact term is usually dominant. Approximate calculations indicate that the reduced coupling constant K AB (defined as (2πtħγAγB)J AB, where γ A and γB are the nuclear magnetogyric ratios and J AB is the usual constant in cycles/second) is negative if one of the atoms is fluorine. Broad agreement is obtained with the available experimental data for atoms up to fluorine connected by single bonds and a tentative pattern for signs and magnitudes is suggested.
514 citations
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TL;DR: ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics, and compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes ZnO Nanostructure suitable candidate for future small integrated biosensor devices.
512 citations
Authors
Showing all 7655 results
Name | H-index | Papers | Citations |
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Rajesh Kumar | 149 | 4439 | 140830 |
Akhilesh Pandey | 100 | 529 | 53741 |
A. S. Bell | 90 | 305 | 61177 |
David R. Clarke | 90 | 553 | 36039 |
Praveen Kumar | 88 | 1339 | 35718 |
Richard C. Thompson | 87 | 380 | 45702 |
Xin-She Yang | 85 | 444 | 61136 |
Andrew J. Pollard | 79 | 673 | 26295 |
Krishnendu Chakrabarty | 79 | 996 | 27583 |
Vinod Kumar | 77 | 815 | 26882 |
Bansi D. Malhotra | 75 | 375 | 19419 |
Matthew Hall | 75 | 827 | 24352 |
Sanjay K. Srivastava | 73 | 366 | 15587 |
Michael Jones | 72 | 331 | 18889 |
Sanjay Singh | 71 | 1133 | 22099 |