NEC

About: NEC is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 33269 authors who have published 57670 publications receiving 835952 citations. The organization is also known as: NEC Corporation & NEC Electronics Corporation.

Current-controlled luminous element array and method for producing the same

Abstract: In a current-controlled luminous element array, combinations of a luminous element of a current-controlled type, a current-controlling transistor for controlling the current of the luminous element, and a switching transistor are arranged in a matrix form between signal electrode lines and scan electrode lines such that the luminous element is connected at one terminal thereof to a power source electrode line and at the other terminal thereof to a drain electrode of the current-controlling transistor, a gate electrode of the current-controlling transistor and one signal electrode line have the switching transistor connected therebetween, and the current-controlling transistor in an arbitrary column of matrix has a source electrode thereof connected to one scan electrode line in another column.

Call blocking performance of distributed algorithms for dynamic channel allocation in microcells

Abstract: We determine the call blocking performance of channel-allocation algorithms where every channel is available for use in every cell and where decisions are made by mobiles/portables based only on local observations. Using a novel Erlang-B approximation method, together with simulation, we demonstrate that even the simplest algorithm, the timid, compares favorably with impractical, centrally administered fixed channel allocation. Our results suggest that an aggressive algorithm, that is, one requiring call reconfigurations, could provide a substantially reduced blocking probability. We also present some algorithms which take major steps toward achieving the excellent blocking performance of the hypothetical aggressive algorithm but having the stability of the timid algorithm. >

Stacked film patterning method and gate electrode forming method

Abstract: A stacked film patterning method is provided which is capable of reliably removing residual substances remaining after etching of a metal film, improving etching uniformity of a silicon film, and preventing an occurrence of etching residues. A micro-crystal film and a chromium film are sequentially formed on an insulating film serving as a front-end film and the chromium film is etched to be patterned by using a resist as a mask. Next, a micro-crystal silicon film on which the residual substances exist is exposed to plasma of a mixed gas including chlorine gas and oxygen gas to selectively etch the residual substances on a surface of the micro-crystal silicon film. After that, the micro-crystal silicon film is dry etched.

Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch

Abstract: A novel solid-electrolyte nonvolatile switch that we previously developed for programmable large-scale-integration circuits turns on or off when a conducting Cu bridge is formed or dissolved in the solid electrolyte. Cu+ ion migration and an electrochemical reaction are involved in the switching process. For logic applications, we need to adjust its turn-on voltage (V ON), which was too small to maintain the conductance state during logic operations. In this paper, we clarified that V ON is mainly affected by the rate of Cu+ ion migration in the solid electrolyte. Considering the relationship between the migration rate and V ON, we replaced the former electrolyte, Cu2-alphaS, with Ta2O5, which enabled us to appropriately adjust V ON with a smaller Cu+ ion diffusion coefficient.

Thin film capacitor

Abstract: There is provided a thin film capacitor including (a) a semiconductor substrate, (b) an interlayer insulating film formed on the semiconductor substrate, (c) a contact formed throughout the interlayer insulating film such that the contact has an upper surface upwardly projecting, (d) a lower electrode formed on the interlayer insulating film such that the lower electrode covers the upper surface of the contact therewith, (e) a capacitor insulating film covering the lower electrode and the interlayer insulating film therewith, and (f) an upper electrode formed on the capacitor insulating film The thin film capacitor prevents peeling between the contact and the lower electrode even in an annealing step