NEC

About: NEC is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 33269 authors who have published 57670 publications receiving 835952 citations. The organization is also known as: NEC Corporation & NEC Electronics Corporation.

Apparatus and method for incorporating a large number of destinations over circuit-switched wide area network connections

Abstract: In a wide-area computer network system providing bandwidth based on network demand, throughput, and delay requirements, distribution of network load over multiple, parallel connections from the originating node to a distinction node, an apparatus and method of enabling efficient exchange of packet data routing information for information protocol and information protocol exchange routers by providing different routing table information maintenance modes which a user can select, such as a default mode, a forced mode, and a periodic mode. In addition, the system provides, a virtual interface as a logical network interface for providing circuit switched connectivity, such as a connection between a host/application and a remote network where a particular path between a host and a remote network is dynamically assigned based on the network traffic demand at that time.

Nonlinear phase shifts induced by semiconductor optical amplifiers with control pulses at repetition frequencies in the 40–160-GHz range for use in ultrahigh-speed all-optical signal processing

Abstract: In a semiconductor optical amplifier (SOA) with copropagating optical pump pulses, the application of a nonlinear phase shift to optical signals provides the driving force for all-optical interferometric switching. We study, both analytically and experimentally, the dependencies of the nonlinear phase shift on the driving frequency (42–168 GHz) and on the SOA parameters. We have found that the nonlinear phase shift (ΔΦNL) decreases with the driving frequency but that this decrease is only linear, i.e., ΔΦNL∝f-1. We have also found that the nonlinear phase shift in the SOA linearly increases with the injection current (Iop), i.e., ΔΦNL∝Iop, even in this ultrahigh-frequency range.

Directional discrimination in the self-mixing type laser Doppler velocimeter.

Abstract: A simple and inexpensive method of directional discrimination of velocity based on the analysis of the Doppler signal's waveform obtained through a self-mixing type laser Doppler velocimeter (LDV) is described. The technique does not need the components commonly used to give the frequency offset required to yield directional information in LDV. The device is described, and experimental evidence is presented.

Electrode Dynamics from First Principles

Abstract: The investigation of electrode dynamics has been a major topic in the field of electrochemistry for a century. Electrode dynamics consist of electron transfer reactions that give rise to, or are caused by, a bias voltage, and are influenced by surface catalysis, electrolyte solution, transport of electrons and ions. The first-principles molecular dynamics simulation of the electrochemical system has been hampered by the difficulty to describe the bias voltage and the complex solution-electrode interface structure. Here we utilize a new algorithm called the effective screening medium to characterize the biased interface between platinum and liquid water, revealing the microscopic details of the first, Volmer, step of the platinum-catalyzed hydrogen evolution reaction. By clarifying the important roles played by both the water and the bias, we show why this reaction occurs so efficiently at the interface. Our simulations make a significant step towards a deeper understanding of electrochemical reactions.

Mold-BGA-type semiconductor device and method for making the same

Abstract: Disclosed is a mold-BGA-type semiconductor device which has: a semiconductor chip which includes insulating resin film formed on at least a part of the surface of the semiconductor chip except a pad; a conductive layer formed in a region on the insulating resin film, the region including at least part corresponding to a position where a solder ball is mounted; a first metal thin wire which is wire-bonded between the pad and the conductive layer; a second metal thin wire which is wire-bonded on the conductive layer; resin part which seals the semiconductor chip, the resin part including a hole to expose part of the second metal thin wire; and a solder ball which is mounted on the hole.