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Institution

NEC

CompanyTokyo, Japan
About: NEC is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 33269 authors who have published 57670 publications receiving 835952 citations. The organization is also known as: NEC Corporation & NEC Electronics Corporation.


Papers
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Journal ArticleDOI
TL;DR: In this paper, a mixture of single-wall carbon nanotubes and a monochlorobenzene (MCB) solution of polymethylmethacrylate (PMMA) was sonicated and homogenized.
Abstract: A mixture of as-grown single-wall carbon nanotubes (SWNTs) and a monochlorobenzene (MCB) solution of polymethylmethacrylate (PMMA) was sonicated and homogenized. As a result, SWNTs were separated from carbonaceous impurities and metal particles, which enabled us to purify the SWNTs by filtration. We also found that the number of short (about 1-μm) SWNTs and thin bundles of SWNTs increased. The thin bundles contained one to three SWNTs. These short, thin SWNTs suspended in the MCB solution of PMMA were spin-coated onto a Si wafer, and could be dispersed on it.

113 citations

Patent
Nagashima Noriaki1
18 May 1992
TL;DR: In this paper, the radio speech channels are divided into several channel groups such that no intermodulation products occur among the channels of each group, and each base unit generates priority values of channel groups as representations of usage of the channel groups, consistently updates them through a statistical process and assigns one of the channels having a maximum priority value to the base unit.
Abstract: In a microcellular cordless telephone network, radio speech channels are divided into several channel groups such that no intermodulation products occur among the channels of each group. In each microcell is located a base unit to which one of the channel groups is dynamically assigned. To achieve the channel assignment, each base unit generates priority values of the channel groups as representations of usage of the channel groups, consistently updates them through a statistical process and assigns one of the channel groups having a maximum priority value to the base unit.

113 citations

Journal ArticleDOI
TL;DR: In this paper, a very small film heater immersed in ethyl alcohol, toluene or water is heated at an extremely high rate to a maximum temperature rise of 93 × 106 K s−1.

113 citations

Patent
Kawamura Masashi1
14 Jun 1999
TL;DR: In this article, a memory module is fitted with a cover and heat sink having a U-shape in cross-section in such a manner that the memory module 10 is inserted into a Ushaped deep recess of the cover-and-heat sink.
Abstract: A memory module 10 is fitted with a “cover and heat sink” 5 having a U-shape in cross section in such a manner that the memory module 10 is inserted into a U-shaped deep recess of the “cover and heat sink” 5 , and all packaged memory ICs 3 and the other components 2 mounted on each face of a printed circuit board 1 are covered by the “cover and heat sink” 5 , with a silicone grease 6 being filled between the “cover and heat sink” 5 and the packaged memory ICs 3 . The heat generated in each packaged memory IC 3 is conducted to the “cover and heat sink” 5 through the silicone grease 6 , and the heat is radiated from the surface of the “cover and heat sink” 5 having a large surface area. In addition, since all the components 2 and 3 mounted on the printed circuit board 1 are covered with the “cover and heat sink” 5 , the components 2 and 3 mounted on the printed circuit board 1 are protected from a mechanical shock. Furthermore, it is possible to discriminate whether or not the degree of the warping of the printed circuit board 1 exceeds a permissible limit. Because, if the warping of the printed circuit board exceeds a certain limit, the memory module cannot be inserted into the U-shaped deep recess of the “cover and heat sink” 5.

113 citations

Journal ArticleDOI
TL;DR: In this article, as-deposited superconducting thin films (∼0.1 μm) of YBa2Cu3O7−x have been prepared by pulsed laser deposition on (100) Si with buffer layers of BaTiO3/MgAl2O4.
Abstract: As‐deposited superconducting thin films (∼0.1 μm) of YBa2Cu3O7−x have been prepared by pulsed laser deposition on (100) Si with buffer layers of BaTiO3/MgAl2O4. X‐ray diffraction studies reveal that the films grow epitaxially with the c axis preferentially oriented normal to the substrate surface. This is confirmed by ion channeling measurements along the (100) (normal to the surface) and (110) directions of the Si substrate showing a minimum yield of 54% along the (100), and 78% along the (110) axes using 2.8 MeV He++. Preliminary transmission electron microscopy study also supports these results. The as‐deposited films have zero resistance temperatures of 86–87 K, and critical current densities of 6×104 A/cm2 at 77 K and 1.2×105 A/cm2 at 73 K. Our results indicate that the superconducting properties of the films are limited primarily by the quality and degree of epitaxal growth of the buffer layers on the silicon substrate.

112 citations


Authors

Showing all 33297 results

NameH-indexPapersCitations
Pulickel M. Ajayan1761223136241
Xiaodong Wang1351573117552
S. Shankar Sastry12285886155
Sumio Iijima106633101834
Thomas W. Ebbesen9930570789
Kishor S. Trivedi9569836816
Sharad Malik9561537258
Shigeo Ohno9130328104
Adrian Perrig8937453367
Jan M. Rabaey8152536523
C. Lee Giles8053625636
Edward A. Lee7846234620
Otto Zhou7432218968
Katsumi Kaneko7458128619
Guido Groeseneken73107426977
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20238
202220
2021234
2020518
2019952
20181,088