NEC

About: NEC is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 33269 authors who have published 57670 publications receiving 835952 citations. The organization is also known as: NEC Corporation & NEC Electronics Corporation.

Server load balancing system, server load balancing device, and content management device

Abstract: A server load balancing system for distributing a content delivery to a client among a plurality of content servers, comprises a destination server determining policy setting unit for setting selection criteria for determining a content server for delivering the content for every content characteristic and a destination server determining unit for determining the content server for delivering the content requested from the client, according to the selection criteria corresponding to the characteristic of the requested content.

Liquid crystal light valve showing an improved display contrast

Abstract: An optically-addressed liquid crystal light valve comprises a transparent insulating substrate having either one-dimensional or two-dimensional arrays of optical switching elements thereon which can perform switching with an incident light, another opposing transparent substrate having transparent electrodes and a liquid crystal sandwiched therebetween. Each of the light switching elements comprises a photo-detector circuit and a thin-film-transistor (TFT) drive circuit. The photo-detector circuit comprises a serially connected photodiode and a passive element such as capacitor or resistor. The TFT drive circuit receives as input the voltage produced from the photo-detector circuit, while the output voltage from the TFT drive circuit is applied to one pixel electrode for the liquid crystal.

Semiconductor integrated circuit

Abstract: A semiconductor integrated circuit (100) that may determine whether or not a power supply voltage has dropped to a level that data integrity in a RAM portion (15) may be lost has been disclosed. Semiconductor integrated circuit (100) may include a power on clear (POC) circuit (1), a low voltage detecting circuit (2), a RAM data destruction preventing block (3), a RAM portion (15), and a combination circuit (4). POC circuit (1) may detect when a power supply potential is below a predetermined voltage and provide a reset signal to RAM data destruction preventing block (3). RAM data destruction preventing block (3) may prevent access to memory cells (20) in RAM portion (15) in response to the reset signal. Low voltage detecting circuit (1) may determine if the power supply potential may have dropped below a data holding voltage. In this way, data may only be rewritten to RAM portion (15) after a reset operation if data integrity may be lost.

Semiconductor device and method of manufacturing the same

Abstract: A semiconductor device having one or more semiconductor chips and chip components and a manufacturing method. In the semiconductor device, electrical short of the chip components and the like can be effectively avoided, and break away of the chip components from a substrate can be avoided. The semiconductor device comprises: one or more semiconductor chips each of which is flip chip bonded at a first surface thereof to the substrate; at least one chip components mounted on the substrate and in the proximity of the semiconductor chips; insulating underfill resin which covers the chip components and which fills at least part of a portion between the first surface of each of the semiconductor chips and the substrate; and a lid member which is bonded to a second surface of each of the semiconductor devices opposite to the first surface, via conductive adhesive resin.

Compact, lower-power-consumption wavelength tunable laser fabricated with silicon photonic wire waveguide micro-ring resonators

Abstract: A wavelength tunable laser with an SOA and external double micro-ring resonator, which is fabricated with silicon photonic-wire waveguides, is demonstrated. To date, it is the first wavelength tunable laser fabricated with silicon photonic technology. The device is ultra compact, and its external resonator footprint is 700 x 450 microm, which is about 1/25 that of conventional tunable lasers fabricated with SiON waveguides. The silicon resonator shows a wide tuning range covering the C or L bands for DWDM optical communication. We obtained a maximum tuning span of 38 nm at a tuning power consumption of 26 mW, which is about 1/8 that of SiON-type resonators.