Institution
NEC
Company•Tokyo, Japan•
About: NEC is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 33269 authors who have published 57670 publications receiving 835952 citations. The organization is also known as: NEC Corporation & NEC Electronics Corporation.
Topics: Signal, Layer (electronics), Terminal (electronics), Base station, Transmission (telecommunications)
Papers published on a yearly basis
Papers
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NEC1
TL;DR: In this paper, a HSG-Si cylindrical capacitor structure achieved a cell capacitance of 30 fF with 04 mu m-high storage electrode in a 072 mu m/sup 2/cell area.
Abstract: This HSG-Si cylindrical capacitor structure achieves a cell capacitance of 30 fF with 04 mu m-high storage electrode in a 072 mu m/sup 2/ cell area A new selective etching technique using a low-pressure vapor hydrogen fluoride is developed to form the cylindrical capacitor electrode The high selective etching (2000 times) of borophosphosilicate-glass to SiO/sub 2/ is realized Disilane molecule irradiation in ultra-high vacuum chamber achieves the HSG-Si formation on the whole surface of phosphorous doped amorphous Si cylindrical electrode >
101 citations
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NEC1
TL;DR: A liquid crystal display device as mentioned in this paper includes a reference voltage electrode on one surface, a second board having a lattice of conductive stripes, a plurality of pairs of a transistor and a picture element electrode, each pair being disposed at each crossing point of the conductives stripes and the transistors being thin film transistors using polycrystalline or amorphous silicon, the driving circuit being formed in a monocrystalline silicon in a form of semiconductor integrated circuit directly connected to the conductively stripes, and a liquid crystal interposed between the one surface of the first
Abstract: A liquid crystal display device includes first board having a reference voltage electrode on one surface, a second board having, on a main surface, a lattice of conductive stripes, a plurality of pairs of a transistor and a picture element electrode, each pair being disposed at each crossing point of the conductive stripes and the transistors being thin film transistors using polycrystalline or amorphous silicon, and a driving circuit for driving the conductive stripes, the driving circuit being formed in a monocrystalline silicon in a form of semiconductor integrated circuit directly connected to the conductive stripes, and a liquid crystal interposed between the one surface of the first board and the main surface of the second board.
101 citations
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TL;DR: In this article, the crystal structures of four pseudotetragonal samples of TlO were refined using Rietveld analysis of time-of-flight neutron-powder-diffraction data.
Abstract: We refined the crystal structures of four pseudotetragonal samples of ${\mathrm{Tl}}_{2}$${\mathrm{Ba}}_{2}$${\mathrm{CuO}}_{6+\mathrm{\ensuremath{\delta}}}$ with ${\mathit{T}}_{\mathit{c}}$'s of 0 (metallic), 48, 58, and 73 K by Rietveld analysis of time-of-flight neutron-powder-diffraction data. The presence of excess oxygen atoms located at an interstitial site between double TlO layers was confirmed. The change in oxygen content and the corresponding one in hole carrier concentration in this compound are caused by incorporation and release of the excess oxygen, whose amount is about 0.1 per formula unit for the metallic nonsuperconducting sample. The highest ${\mathit{T}}_{\mathit{c}}$ value of about 85 K in ${\mathrm{Tl}}_{2}$${\mathrm{Ba}}_{2}$${\mathrm{CuO}}_{6+\mathrm{\ensuremath{\delta}}}$ is achieved in the absence of excess oxygen. As the oxygen content is decreased, the c value increases, and apical ${\mathrm{O}}^{2\mathrm{\ensuremath{-}}}$ ions go away from the ${\mathrm{CuO}}_{2}$ layer, while ${\mathrm{Ba}}^{2+}$ ions approach it. It was also suggested that about 5% of a Tl site is substituted by Cu. A significant portion of hole carriers in this compound is attributed to substitution of Cu for Tl and incorporation of excess oxygen.
100 citations
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NEC1
TL;DR: In this paper, the authors classify e-mails stored in a storage device of an e-mail terminal into groups by the email terminal, where each of the relations is capable of relating a single keyword with plural groups.
Abstract: Classification of e-mails stored in a storage device of an e-mail terminal into groups by the e-mail terminal. The method includes: storing to a storage device of the e-mail terminal relations between keywords and groups, wherein each of the relations is capable of relating a single keyword with plural groups; designating one of the groups in the relations; and categorizing an e-mail that includes the keywords related to the designated group as one belonging to the designated group.
100 citations
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TL;DR: The queue-length distribution as well as the waiting time distribution of a single-server queue which is subject to service interruptions is characterized and the Markovian Arrival Process and the server is not available for service at certain times is considered.
Abstract: In this paper we characterize the queue-length distribution as well as the waiting time distribution of a single-server queue which is subject to service interruptions. Such queues arise naturally in computer and communication problems in which customers belong to different classes and share a common server under some complicated service discipline. In such queues, the viewpoint of a given class of customers is that the server is not available for providing service some of the time, because it is busy serving customers from a different class. A natural special case of these queues is the class of preemptive priority queues. In this paper, we consider arrivals according the Markovian Arrival Process (MAP) and the server is not available for service at certain times. The service times are assumed to have a general distribution. We provide numerical examples to show that our methods are computationally feasible.
100 citations
Authors
Showing all 33297 results
Name | H-index | Papers | Citations |
---|---|---|---|
Pulickel M. Ajayan | 176 | 1223 | 136241 |
Xiaodong Wang | 135 | 1573 | 117552 |
S. Shankar Sastry | 122 | 858 | 86155 |
Sumio Iijima | 106 | 633 | 101834 |
Thomas W. Ebbesen | 99 | 305 | 70789 |
Kishor S. Trivedi | 95 | 698 | 36816 |
Sharad Malik | 95 | 615 | 37258 |
Shigeo Ohno | 91 | 303 | 28104 |
Adrian Perrig | 89 | 374 | 53367 |
Jan M. Rabaey | 81 | 525 | 36523 |
C. Lee Giles | 80 | 536 | 25636 |
Edward A. Lee | 78 | 462 | 34620 |
Otto Zhou | 74 | 322 | 18968 |
Katsumi Kaneko | 74 | 581 | 28619 |
Guido Groeseneken | 73 | 1074 | 26977 |