NEC

About: NEC is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 33269 authors who have published 57670 publications receiving 835952 citations. The organization is also known as: NEC Corporation & NEC Electronics Corporation.

Ferroelectric Properties of Sol-Gel Derived Pb(Zr, Ti)O3 Thin Films

Abstract: Pb(Zr, Ti)O3 thin films of thickness ranging from 55 nm to 625 nm were synthesized on Pt/Ti/SiO2/Si substrates using a sol-gel process. The film thickness dependence of both microstructure and electrical properties was investigated. The synthesized films showed columnar structure. The diameter of each column was around 100 nm regardless of the film thickness. The 328 nm-thick film exhibited a dielectric constant (e) of 1000, remanent polarization (Pr) of 20 µC/cm2, and coercive field (Ec) of 47 kV/cm. Both e and Pr decreased and Ec increased with decreasing film thickness. This behavior is attributed to the existence of a low-dielectric-constant interface layer. The results of leakage current measurement were in good agreement with the model of space-charge-limited current.

Page information display method and apparatus, and storage medium for storing program or data for display page

Abstract: To provide a user interface for viewing the information which is easily understood by all people, irrespective of the computer experiences, the present invention adopts a user interface having a metaphor like a book, newspaper or magazine, and for realizing the metaphor of this book, the electronic information is allowed to view in a unit of page of predetermined size therefore, the electronic information is displayed in a unit of page of predetermined size in an information viewing area of a display portion.

Single-photon interference over 150 km transmission using silica-based integrated-optic interferometers for quantum cryptography

Abstract: We have demonstrated single-photon interference over 150 km using time-division interferometers for quantum cryptography, which were composed of two integrated-optic asymmetric Mach-Zehnder interferometers, and balanced gated-mode photon detectors. The observed fringe visibility was more than 80% after 150 km transmission.

Transient colour centres caused by UV light irradiation in yttrium aluminium garnet crystals

Abstract: The degrading laser oscillation behaviour in YAG crystals is attributed to the production of colour centres, induced by UV light irradiation. The optical absorption spectrum of UV induced colour centres is investigated using time resolved transient absorption spectroscopy technique. The UV generated spectrum is found to consist of the superposition of three broad absorption bands E1, E2 and E3 peaked near 1.2 × 104, 2.0 × 104, and 2.8 × 104 cm−1, respectively. Various experiments, such as additive coloration, ESR, thermoluminescence, and optical absorption measurement are made. On the basis of experimental results, a model is proposed for the E1, E2 and E3 bands, which are explained by colour centres trapping an electron at an anion vacancy site. Das sich verschlechternde Laserverhalten in YAG-Kristallen wird der Bildung von Farbzentren zugeschrieben, die sich durch UV-Einstrahlung bilden. Das optische Absorptionsspektrum von UV -induzierten Farbzentren wird mit der zeitaufgelosten Absorptionsspektroskopie untersucht. Es wird gefunden. das das UV-erzeugte Spektrum aus der Uberlagerung von drei breiten Absorptionsbanden E1, E2 und E3 bei etwa 1,2 × 104, 2,0 × 104 bzw. 2,8 × 104 cm−1 besteht. Verschiedene Experimente, wie zusatzliche Verfarbung, ESR, Thermolumineszenz und optische Absorptionsmessungen werden durchgefuhrt. Auf der Grundlage der experimentellen Ergebnisse wird ein Modell fur die E1-, E2- und E3- Bande vorgeschlagen, das Farbzentren annimmt, die ein Elektron in einer Anionenleerstelle einfangen.

Thin film field effect transistor array for use in active matrix liquid crystal display

Abstract: A thin film field effect transistor array includes several parallel gate bus lines formed on a transparent insulative substrate, and several parallel drain bus lines formed on the transparent insulative substrate so as to intersect the gate bus lines. Several pixel electrodes are each formed in proximity of a corresponding one of intersections between the gate bus lines and the drain bus lines, and several thin film field effect transistors are each formed in proximity of a corresponding one of intersections between the gate bus lines and the drain bus lines. Each of the thin film field effect transistors is connected to a corresponding one of the pixel electrodes. Several of storage capacitors are each formed in proximity of and connected in parallel to a corresponding one of the pixel electrodes. Each of the storage capacitors is formed of a stacked structure having at least first, second and third level capacitor electrodes which are stacked in the named order and separated from each other by an intervening insulating layer. At least one of the first, second and third level capacitor electrodes is connected to a corresponding one of the gate bus lines.