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Institution

NEC

CompanyTokyo, Japan
About: NEC is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 33269 authors who have published 57670 publications receiving 835952 citations. The organization is also known as: NEC Corporation & NEC Electronics Corporation.


Papers
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Patent
Kaoru Uchida1
15 May 2001
Abstract: In an identification system for electronic commerce, an end terminal transmits a transaction request message containing biometrics data of a user to a communications network, At least one electronic commerce service provider unit is provided which receives the transaction request message via the network and transmits an authentication request message containing the biometrics data to the network. An authentication server having a database for storing registered biometrics data receives the authentication request message and determines whether the received biometrics data has corresponding biometrics data in the database and returns a reply to the ECSP unit via the network indicating that the transaction request message is authenticated if the received biometrics data coincides with one of the registered biometrics data of the database.

97 citations

Patent
Yuichi Kishida1
18 May 1998
TL;DR: In this article, a memory system having a plurality of banks which form interleave groups for independently forming an interleave, when a memory error is detected in an operating system resident space, the group having the error is interchanged with another group that has not had any error yet.
Abstract: In a memory system having a plurality of banks which forms interleave groups for independently forming an interleave, when a memory error is detected in an operating system resident space, the group having the error is interchanged with another group that has not had any error yet. After a group interchange, a page having the error is also deallocated. When a determination is made that the group interchange causes deterioration of performance, a bank deallocation can be also executed. As this criterion for determination, it is possible to employ a policy that a bank is deallocated when a capacity of a bank including an erroneous sub-bank is equal to or less than a predetermined rate of all the memory capacity and an interleaving factor is less than the interleaving factor of an interchange partner after the bank deallocation.

97 citations

Patent
Yoshio Sano1
28 Nov 1991
TL;DR: In this paper, a method for driving a plasma display panel, one field time is divided to a plurality of sub-field times having different light emitting times each other, at least one of the sub fields is longer than others to have a light emitting time longer than the other sub fields.
Abstract: In a method for driving a plasma display panel, one field time is divided to a plurality of sub-field times having different light emitting times each other. At least one of the sub-field time is longer than others to have a light emitting time longer than the other sub-field times. In each sub-field time, a state is selected from a light emission state and a non-light emission state to provide a predetermined gradation of an image to be displayed without decreasing light efficiency.

97 citations

Journal ArticleDOI
N. Hayama1, Kazuhiko Honjo1
TL;DR: In this article, the emitter size effect for fully self-aligned AlGaAs-GaAs heterojunction bipolar transistors (HBTs) with depleted AlgaAs passivation layers was investigated.
Abstract: The emitter size effect for fully self-aligned AlGaAs-GaAs heterojunction bipolar transistors (HBTs) with depleted AlGaAs passivation layers, in which the partially thinned AlGaAs emitter is self-aligned by using the dual sidewall process, is investigated. It is demonstrated that drastic improvement in the emitter size effect can be achieved with an AlGaAs passivation layer as small as 0.2 mu m in width, due to the surface recombination current reduction by a factor of 1/40 in the extrinsic base region. It has also been found that the base current is dominated by excess leakage current in the proton-implanted isolation region. >

97 citations

Journal ArticleDOI
Masaki Ogawa1
TL;DR: In this paper, the alloying reaction in a thin nickel film deposited on a GaAs substrate was investigated using microprobe Auger spectroscopy, reflection high energy electron diffraction and transmission electron diffusion.

97 citations


Authors

Showing all 33297 results

NameH-indexPapersCitations
Pulickel M. Ajayan1761223136241
Xiaodong Wang1351573117552
S. Shankar Sastry12285886155
Sumio Iijima106633101834
Thomas W. Ebbesen9930570789
Kishor S. Trivedi9569836816
Sharad Malik9561537258
Shigeo Ohno9130328104
Adrian Perrig8937453367
Jan M. Rabaey8152536523
C. Lee Giles8053625636
Edward A. Lee7846234620
Otto Zhou7432218968
Katsumi Kaneko7458128619
Guido Groeseneken73107426977
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20238
202220
2021234
2020518
2019952
20181,088