NEC

About: NEC is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 33269 authors who have published 57670 publications receiving 835952 citations. The organization is also known as: NEC Corporation & NEC Electronics Corporation.

Lightwave propagation through a 120° sharply bent single-line-defect photonic crystal waveguide

Abstract: We have demonstrated 1.55 μm wavelength lightwave propagation through a 120° sharply bent waveguide formed in a triangular-lattice two-dimensional photonic crystal (2D PC). Such propagation has not previously been experimentally confirmed. The photonic crystal was fabricated in a silicon-on-insulator (SOI) wafer with the top silicon layer of the wafer used as a core layer. A 877-μm-long single-line-defect waveguide was formed in the PC with a sharp 120° bend near the middle of the waveguide. A tapered-hemispherical-end fiber was coupled to the input end of the waveguide for the light input, and the output from the other end of the waveguide was directly observed by scanning its near-field profile with another tapered-hemispherical-end fiber.

Superprism phenomena in photonic crystals: toward microscale lightwave circuits

Abstract: The superprism phenomenon, the dispersion of light 500 times stronger than the dispersion in conventional prisms, was demonstrated at optical wavelengths in photonic crystals (PC's) fabricated on Si. Drastic light-beam steering in the PC's was achieved by slightly changing the incident wavelength or angle. The scanning span reached 50/spl deg/ with only a 1% shift of incident wavelength, and reached 140/spl deg/ with only a 14/spl deg/ shift of the incident angle at wavelengths around 1 /spl mu/m. The propagation direction was quantitatively interpreted in terms of highly anisotropic dispersion surfaces derived by photonic band calculation. The physics behind this demonstration will open a novel field called photonic crystalline optics. The application of these phenomena promises to enable the fabrication of integrated microscale lightwave circuits (/spl mu/LC's) on Si with large scale integrated (LSI)-compatible lithography techniques. Such /spl mu/LC's will allow more efficient use of wavelength resources when used in wavelength multiplexers/demultiplexers or dispersion compensators by enabling lower loss and broader bandwidth.

Page information display method and device and storage medium storing program for displaying page information

Abstract: A page information display method for displaying electronic information includes a page turning operation detecting step of outputting a page turning operation detecting signal when a dragging is made on an operation unit in parallel or unparallel to a predefined page turning direction at a current page read from a storage unit that is to be displayed at present, a next display page setting step of setting a preceding page or a succeeding page immediately before or after a current page depending on a direction of a dragging operation to a next display page to be displayed next, when a page turning operation detecting signal is detected in the page turning operation detecting step, and a page turning process step of displaying the next display page set in the next display page setting step in place of the current page on a display unit.

Production apparatus for manufacturing semiconductor device

Abstract: The present invention discloses a production apparatus for manufacturing semiconductor device which comprises a vacuum processing chamber where film formation or etching is performed for a semiconductor wafer, a gas introducing part for introducing a process gas into the vacuum processing chamber, and a shower head for uniformly diffusing the introduced process gas, where a plate having a plurality of gas blowing holes for blowing the process gas on the semiconductor wafer are arranged and opened with uniform density is provided on the face of a shower head opposing the semiconductor wafer. Each of the gas blowing holes opened in the plate is a steeped hole having a large diameter hole part and a small diameter hole part, formed by varying the step location in response to the pressure distribution of the process gas within the shower head so as to make the amount of the gas blown from respective gas blowing holes uniform.

Spin-current-driven thermoelectric coating

Abstract: Energy harvesting technologies, which generate electricity from environmental energy, have been attracting great interest because of their potential to power ubiquitously deployed sensor networks and mobile electronics. Of these technologies, thermoelectric (TE) conversion is a particularly promising candidate, because it can directly generate electricity from the thermal energy that is available in various places. Here we show a novel TE concept based on the spin Seebeck effect, called 'spin-thermoelectric (STE) coating', which is characterized by a simple film structure, convenient scaling capability, and easy fabrication. The STE coating, with a 60-nm-thick bismuth-substituted yttrium iron garnet (Bi:YIG) film, is applied by means of a highly efficient process on a non-magnetic substrate. Notably, spin-current-driven TE conversion is successfully demonstrated under a temperature gradient perpendicular to such an ultrathin STE-coating layer (amounting to only 0.01% of the total sample thickness). We also show that the STE coating is applicable even on glass surfaces with amorphous structures. Such a versatile implementation of the TE function may pave the way for novel applications making full use of omnipresent heat.