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Institution

NEC

CompanyTokyo, Japan
About: NEC is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 33269 authors who have published 57670 publications receiving 835952 citations. The organization is also known as: NEC Corporation & NEC Electronics Corporation.


Papers
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Journal ArticleDOI
TL;DR: The four-phased deployments and demonstration of new networking capabilities enabled by SDN played an important role in maturing SDN and its ecosystem and the experiences and lessons learned are shared.

176 citations

Patent
Wen-Syan Li1
12 Dec 2000
TL;DR: In this article, a focused search engine and method are directed to crawling vast search spaces comprising markup language documents, for example, both topic distillation and site distillation methodologies are incorporated into an integrated topic-focused search strategy.
Abstract: A focused search engine and method are directed to crawling vast search spaces comprising markup language documents, for example. Both topic distillation and site distillation methodologies are incorporated into an integrated topic-focused search strategy. Categorization of search results may be initiated by the search engine itself; alternatively, topic categories of interest may be specified in conjunction with the original request for information.

176 citations

Patent
Yoichiro Morita1, Masayuki Nakae1
20 May 2005
TL;DR: In this article, a policy storage stores an access control policy as a set of setting information items to make resources (access destinations) shared by an ad hoc group, and a policy analyzer updates a rule generated from the edited policy.
Abstract: A policy storage stores an access control policy as a set of setting information items to make resources (access destinations) shared by an adhoc group. When a part of the access control policy is edited, a policy analyzer updates a rule generated from the edited access control policy. At this time, the rule is updated with use of object knowledge having a data configuration capable of expressing a user as belonging to plural user groups. An access control list setting means updates a part of an access control list, based on the updated rule. Accordingly, an access control list can be generated with respect to a user group including a user who belongs to plural organizations, and the access control list can be updated efficiently.

176 citations

Patent
Narushi Ito1
27 Aug 1993
TL;DR: In this paper, a memory for storing data including a data and a time of fabricating the biosensor, a lot number of the sensors, an effective period of the sensor, the biosensors characteristics, and administrative data of the bios sensors.
Abstract: A biosensor is provided with a memory for storing data including a data and a time of fabricating the biosensor, a lot number of the biosensor, an effective period of the biosensor, the biosensor characteristics, and administrative data of the biosensor. The memory may store additional data such as the measured date, the consecutive (total) measuring time, the measured results, etc.

176 citations

Patent
Yasuo Ikeda1
28 Jun 1995
TL;DR: In this article, a plasma-enhanced CVD process for depositing a silicon oxide film on a substrate by using an organosilicon compound such as tetraethoxysilane and oxygen or ozone as the essential reactants is described.
Abstract: The subject is a plasma-enhanced CVD process for depositing a silicon oxide film on a substrate by using an organosilicon compound such as tetraethoxysilane and oxygen or ozone as the essential reactants. The disclosed CVD method uses a plasma containing oxygen ions, and the density of oxygen ions impinging on the substrate surface is cyclically decreased and increased with a short period such as, e.g., 1 sec. In extreme cases which are rather preferable, the effect of the oxygen plasma is cyclically nullified and returned to a maximum to thereby alternate plasma CVD and plain thermal CVD. The obtained film is comparable in film properties to silicon oxide films deposited by known plasma CVD methods and, when the substrate has steps such as aluminum wiring lines, is better in step coverage and gap filling capability. The film exhibits a still better profile when hydrogen peroxide gas or an alternative hydrogen containing gas is added to the reactant gas mixture.

176 citations


Authors

Showing all 33297 results

NameH-indexPapersCitations
Pulickel M. Ajayan1761223136241
Xiaodong Wang1351573117552
S. Shankar Sastry12285886155
Sumio Iijima106633101834
Thomas W. Ebbesen9930570789
Kishor S. Trivedi9569836816
Sharad Malik9561537258
Shigeo Ohno9130328104
Adrian Perrig8937453367
Jan M. Rabaey8152536523
C. Lee Giles8053625636
Edward A. Lee7846234620
Otto Zhou7432218968
Katsumi Kaneko7458128619
Guido Groeseneken73107426977
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20238
202220
2021234
2020518
2019952
20181,088