Showing papers by "Panasonic published in 2014"

Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell

Abstract: The crystalline silicon heterojunction structure adopted in photovoltaic modules commercialized as Panasonic's HIT has significantly reduced recombination loss, resulting in greater conversion efficiency. The structure of an interdigitated back contact was adopted with our crystalline silicon heterojunction solar cells to reduce optical loss from a front grid electrode, a transparent conducting oxide (TCO) layer, and a-Si:H layers as an approach for exceeding the conversion efficiency of 25%. As a result of the improved short-circuit current (J sc ), we achieved the world's highest efficiency of 25.6% for crystalline silicon-based solar cells under 1-sun illumination (designated area: 143.7 cm 2 ).

Towards Deep Neural Network Architectures Robust to Adversarial Examples

Abstract: Recent work has shown deep neural networks (DNNs) to be highly susceptible to well-designed, small perturbations at the input layer, or so-called adversarial examples. Taking images as an example, such distortions are often imperceptible, but can result in 100% mis-classification for a state of the art DNN. We study the structure of adversarial examples and explore network topology, pre-processing and training strategies to improve the robustness of DNNs. We perform various experiments to assess the removability of adversarial examples by corrupting with additional noise and pre-processing with denoising autoencoders (DAEs). We find that DAEs can remove substantial amounts of the adversarial noise. How- ever, when stacking the DAE with the original DNN, the resulting network can again be attacked by new adversarial examples with even smaller distortion. As a solution, we propose Deep Contractive Network, a model with a new end-to-end training procedure that includes a smoothness penalty inspired by the contractive autoencoder (CAE). This increases the network robustness to adversarial examples, without a significant performance penalty.

The Visual Object Tracking VOT2014 challenge results

Abstract: The Visual Object Tracking challenge 2014, VOT2014, aims at comparing short-term single-object visual trackers that do not apply pre-learned models of object appearance. Results of 38 trackers are presented. The number of tested trackers makes VOT 2014 the largest benchmark on short-term tracking to date. For each participating tracker, a short description is provided in the appendix. Features of the VOT2014 challenge that go beyond its VOT2013 predecessor are introduced: (i) a new VOT2014 dataset with full annotation of targets by rotated bounding boxes and per-frame attribute, (ii) extensions of the VOT2013 evaluation methodology, (iii) a new unit for tracking speed assessment less dependent on the hardware and (iv) the VOT2014 evaluation toolkit that significantly speeds up execution of experiments. The dataset, the evaluation kit as well as the results are publicly available at the challenge website (http://votchallenge.net).

High-efficiency deep-blue organic light-emitting diodes based on a thermally activated delayed fluorescence emitter

Abstract: Highly efficient deep-blue thermally activated delayed fluorescence (TADF) is observed from a charge-transfer compound bis[4-(3,6-dimethoxycarbazole)phenyl]sulfone (DMOC-DPS). In comparison with the previously reported carbazole/sulfone derivative with tert-butyl substituents on the carbazole donors, DMOC-DPS exhibits a much shorter excited-state lifetime in both an aromatic solution and an organic thin film, because the change of the substituent on the donor affects the molecular energy levels of the first singlet (S1) and triplet (T1) excited states in different ways, decreasing the energy gap between S1 and T1 (ΔEST). An organic light emitting diode (OLED) based on DMOC-DPS achieves a maximum external electroluminescence quantum efficiency (EQE) of 14.5% and reduced efficiency roll-off, with Commission Internationale de L'Eclairage (CIE) coordinates of (0.16, 0.16), owing to efficient exciton harvesting that occurs through triplet-to-singlet up-conversion.

Towards Deep Neural Network Architectures Robust to Adversarial Examples

Abstract: Recent work has shown deep neural networks (DNNs) to be highly susceptible to well-designed, small perturbations at the input layer, or so-called adversarial examples. Taking images as an example, such distortions are often imperceptible, but can result in 100% mis-classification for a state of the art DNN. We study the structure of adversarial examples and explore network topology, pre-processing and training strategies to improve the robustness of DNNs. We perform various experiments to assess the removability of adversarial examples by corrupting with additional noise and pre-processing with denoising autoencoders (DAEs). We find that DAEs can remove substantial amounts of the adversarial noise. How- ever, when stacking the DAE with the original DNN, the resulting network can again be attacked by new adversarial examples with even smaller distortion. As a solution, we propose Deep Contractive Network, a model with a new end-to-end training procedure that includes a smoothness penalty inspired by the contractive autoencoder (CAE). This increases the network robustness to adversarial examples, without a significant performance penalty.

Ferroelectric Artificial Synapses for Recognition of a Multishaded Image

Abstract: We demonstrate, for the first time, the on-chip pattern recognition of a multishaded grayscale image in a neural network circuit with multiple neurons. This pattern recognition is based on a spiking neural network model that uses multiple three-terminal ferroelectric memristors (3T-FeMEMs) as synapses. The synapse chip of the neural network is formed by stacking CMOS circuits and 3T-FeMEMs. The conductance of the 3T-FeMEM is gradually changed in the linear range by varying the amplitude of the applied voltage pulse. Using the analog and nonvolatile conductance change of the 3T-FeMEM as synaptic weight, the matrix patterns are learned after the spike timing-dependent plasticity learning rule. Even when an incomplete multishaded pattern is input to the neural network circuit, it automatically completes and recalls a previously learned pattern.

Server, router, receiving terminal, and processing method

Abstract: A server according to the present disclosure includes: a converting unit that converts content data to enhance a real-time property, and creates a packet of the converted content data; and a server control unit that updates a routing table that describes processing for an interest packet, wherein when an interest packet for content including converted content data is received, the server control unit performs control of issuing an interest packet for original content data of the content which is to be converted, and when original content data to be processed is received from a CCN, the server control unit performs control of causing the original content data to be converted, a packet of the converted original content data to be created, and the packet of the converted original content data to be transmitted as a response packet for the interest packet for the content including the converted content data.

Immunoactive two-dimensional self-assembly of monoclonal antibodies in aqueous solution revealed by atomic force microscopy

Abstract: The conformational flexibility of antibodies in solution directly affects their immune function. Namely, the flexible hinge regions of immunoglobulin G (IgG) antibodies are essential in epitope-specific antigen recognition and biological effector function. The antibody structure, which is strongly related to its functions, has been partially revealed by electron microscopy and X-ray crystallography, but only under non-physiological conditions. Here we observed monoclonal IgG antibodies in aqueous solution by high-resolution frequency modulation atomic force microscopy (FM-AFM). We found that monoclonal antibodies self-assemble into hexamers, which form two-dimensional crystals in aqueous solution. Furthermore, by directly observing antibody-antigen interactions using FM-AFM, we revealed that IgG molecules in the crystal retain immunoactivity. As the self-assembled monolayer crystal of antibodies retains immunoactivity at a neutral pH and is functionally stable at a wide range of pH and temperature, the antibody crystal is applicable to new biotechnological platforms for biosensors or bioassays.

A Wearable 8-Channel Active-Electrode EEG/ETI Acquisition System for Body Area Networks

Abstract: This paper describes an 8-channel gel-free EEG/electrode-tissue impedance (ETI) acquisition system, consisting of nine active electrodes (AEs) and one back-end (BE) analog signal processor. The AEs amplify the weak EEG signals, while their low output impedance suppresses cable-motion artifacts and 50/60 Hz mains interference. A common-mode feed-forward (CMFF) scheme boosts the CMRR of the AE pairs by 25 dB. The BE post-processes and digitizes the analog outputs of the AEs, it also can configure them via a single-wire pulse width modulation (PWM) protocol. Together, the AEs and BE are capable of recording 8-channel EEG and ETI signals. With EEG recording enabled, ETIs of up to 60 kΩ can be measured, which increases to 550 kΩ when EEG recording is disabled. Each EEG channel has a 1.2 GΩ input impedance (at 20 Hz), 1.75 μVrms (0.5-100 Hz) input-referred noise, 84 dB CMRR and ±250 mV electrode offset rejection capability. The EEG acquisition system was implemented in a standard 0.18 μm CMOS process, and dissipates less than 700 μW from a 1.8 V supply.

Semiconductor light-emitting device

Abstract: A semiconductor light-emitting device includes a first heat sink and a second heat sink both formed of an insulating member and facing and thermally connected to each other, and a semiconductor light-emitting element. The semiconductor light-emitting element is held in a cavity between the first heat sink and the second heat sink. The second heat sink has a first electrode and a second electrode on a surface facing the first heat sink, and a third electrode and a fourth electrode on a surface opposite to the surface facing the first heat sink. The first electrode is connected to a lower electrode of the light-emitting element. The second electrode is connected to an upper electrode of the light-emitting element. The first electrode and the third electrode are connected to each other, and the second electrode and the fourth electrode are connected to each other.

Biosensor, biosensor chip and biosensor device

Abstract: A biosensor device includes a biosensor having a plurality of biosensor sections each including a working pole and a counter pole. The biosensor device further includes a singal processing circuit for measuring a current flowing from the working pole when different voltages are applied between the working poles and the counter poles of the respective biosensor sections and for specifying a concentration of a to-be-measured material from a measured current value.

Appliance control method, speech-based appliance control system, and cooking appliance

Abstract: In a case of receiving, from an audio input device, instruction information including first audio information indicating operation instructions for a cooking appliance when first and second cooking units are executing first and second cooking programs, respectively, operation instructions are recognized from the first audio information. In a case where it is determined that the instruction information includes second audio information related to the first cooking menu information or the second cooking menu information, a control command is transmitted to the cooking appliance to cause the cooking appliance to execute a process corresponding to the operation instructions, without executing a process according to the first cooking program or the second cooking program corresponding to one of the first cooking menu information or the second cooking menu information to which the second audio information is related.

GaN transistors on Si for switching and high-frequency applications

Abstract: In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC–DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

Automotive component self update via software version control

Abstract: A method of updating software files in a motor vehicle includes comparing version identifiers of software files located externally to the vehicle to version identifiers of corresponding software files located within the vehicle. Ones of the software files located within the vehicle that have earlier versions than the corresponding software files located externally to the vehicle are identified. Only the identified ones of the software files located within the vehicle that have earlier versions than the corresponding software files located externally to the vehicle are replaced. The identified ones of the software files located within the vehicle are replaced with the corresponding software files located externally to the vehicle.

Image coding method, image decoding method, image coding apparatus, and image decoding apparatus

Abstract: An image coding method includes: deriving a candidate for a motion vector predictor from a co-located motion vector; adding the candidate to a list; selecting the motion vector predictor from the list; and coding a current block and coding a current motion vector, wherein the deriving includes: deriving the candidate by a first derivation scheme in the case of determining that each of a current reference picture and a co-located reference picture is a long-term reference picture; and deriving the candidate by a second derivation scheme in the case of determining that each of the current reference picture and the co-located reference picture is a short-term reference picture.

Method for controlling information apparatus and computer-readable recording medium

Abstract: The present disclosure is a method for controlling an information apparatus having a third display and being used in an information management system, the method causing a computer of the information apparatus to: display a display screen representing at least one floor plan of a building on the third display; display device icons representing target devices including a first target device and a second target device on the display screen, the device icons being movable by dragging the device icons; and when it is sensed that a device icon representing the second target device is dropped on a device icon representing the first target device, output to the information management system a first control command for displaying a confirmation screen on a first display of the first target device, the confirmation screen being for confirmation of a state of the second target device.

Efficient uplink scheduling mechanisms for dual connectivity

Abstract: The present disclosure mainly relates to improvements for the buffer status reporting and the logical channel prioritization procedures performed in the UE, in scenarios where the UE is in dual connectivity and the PDCP layer of the UE is shared in the uplink for MeNB and SeNB. According to the present disclosure, a ratio is introduced according to which the buffer values for the PDCP are split in the UE between the SeNB and the MeNB according to said ratio.

Semiconductor light emitting device

Abstract: A semiconductor light-emitting device includes a substrate; a first cladding layer formed on the substrate; a first guide layer formed on the first cladding layer; an active layer formed on the first guide layer; a second guide layer formed on the active layer; a contact layer formed on the second guide layer; a cladding electrode formed on the contact layer, and made of conductive metal oxide; and a pad electrode electrically coupled to the cladding electrode. The semiconductor light-emitting device includes a mesa structure including the contact layer. The cladding electrode has a greater width than the mesa structure. The cladding electrode covers an upper surface and side surfaces of the mesa structure, and is electrically coupled to the contact layer.

Control method for information apparatus and computer-readable recording medium

Abstract: A control method of the present disclosure causes a computer of the information apparatus to: switch between display of a first display screen and a second display screen displayed on the display, when selection of a region corresponding to a staircase on a floor plan for a first floor or a second floor is sensed; and output to the network a first control command, when selection of an illumination icon representing an illumination device among the one or more target devices in a region corresponding to the staircase included in the first display screen, or an illumination icon representing the illumination device in a region corresponding to the staircase included in the second display screen is sensed, and when selection of the region corresponding to the staircase is sensed, the first control command controlling on/off of power for the illumination device associated with the region corresponding to the staircase.

Device control method, display control method, and purchase settlement method

Abstract: A device control method includes acquiring voice information, obtaining a spoken command indicating a control instruction as to a device based on the acquired voice information, identifying speaker information relating to a speaker which has uttered the acquired voice information, based on the acquired voice information, identifying, out of a plurality of devices, a device to be controlled, based on the spoken command and the speaker information, and controlling the identified device to be controlled.

Terminal device, verification device, key distribution device, content playback method, key distribution method, and computer program

Abstract: The terminal device 600 comprises: a read unit configured to read encrypted content and a content signature from a regular region of a recording medium device 700 , and to read a converted title key from an authorized region of the recording medium device 700 , the converted title key having been converted from a title key with use of a content signature generated by an authorized signature device 500 ; a title key reconstruction unit configured to generate a reconstructed title key by reversely converting the converted title key with use of the content signature read by the read unit; and a playback unit configured to decrypt the encrypted content with use of the reconstructed title key to obtain decrypted content, and to play back the decrypted content.

Prediction of Gastric Cancer Development by Serum Pepsinogen Test and Helicobacter pylori Seropositivity in Eastern Asians: A Systematic Review and Meta-Analysis

Abstract: Background To identify high-risk groups for gastric cancer in presumptively healthy populations, several studies have investigated the predictive ability of the pepsinogen test, H. Pylori antibodies, and a risk-prediction model based on these two tests. To investigate whether these tests accurately predict gastric cancer development, we conducted a systematic review and meta-analysis. Methods PubMed and other electronic databases were searched for cohort studies published in English or Japanese from January 1985 through December 2013. Six reviewers identified eligible studies, and at least two investigators extracted data on population and study-design characteristics, quality items, and outcomes of interest. Meta-analyses were performed on non-overlapping studies. Results Nine prospective cohorts from Eastern Asia reported in 12 publications, including 33,741 asymptomatic middle-aged participants of gastric cancer screening, were eligible. For discriminating between asymptomatic adults at high and low risk of gastric cancer, the pepsinogen test (summary hazard ratio [HR], 3.5; 95% confidence interval [CI], 2.7–4.7; I2 = 0%) and H. pylori antibodies (summary HR, 3.2; 95% CI, 2.0–5.2; I2 = 0%) were statistically significant predictors as standalone tests. Although the risk-prediction model was in general moderately accurate in separating asymptomatic adults into four risk groups (summary c-statistic, 0.71; 95% CI: 0.68–0.73; I2 = 7%), calibration seemed to be poor. The study validity was generally limited. Conclusions The serum pepsinogen test, H. pylori antibodies, and the four-risk-group model for predicting gastric cancer development seem to have the potential to stratify middle-aged presumptively healthy adults. Future research needs to focus on comparative studies to evaluate the impact of screening programs adopting these tests. Also, validation, preferably with model updating, is necessary to see whether the current model performance is transferable to different populations.

A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies

Abstract: In this paper, we present a novel compact DC-DC converter IC in which normally-off GaN-GITs (Gate Injection Transistors) and gate drivers are integrated into one chip. The DC-DC converter IC can achieve higher efficiency and smaller chip size by reducing parasitic inductances between switching power devices and gate drivers. The gate driver, having a DCFL (Direct Coupled FET Logic) with a buffer amplifier which is consisted of a GaN-HFET (Hetero-junction FET) and GaN-GITs can operate with higher speed and lower power consumption. The fabricated DC-DC converter IC exhibits a peak efficiency as high as 86.6% at 2MHz for the 12V-1.8V conversion.

Light-emitting device

Abstract: A light-emitting device, comprising: a planar light-emitting unit having a light-emitting surface and a non-light-emitting surface; a planar solar power generation unit having a light-receiving section and a non-light-receiving section; and a storage battery. A photoelectric conversion unit is configured by arranging the light-emitting unit and the solar power generation unit such that the non-light-emitting surface and the non-light-receiving surface are facing. The light-emitting device also comprises: a posture detection unit that detects the posture of the photoelectric conversion unit; and a connection switching unit that selectively connects the storage battery and either the light-emitting unit or the solar power generation unit, and which is arranged between the non-light-emitting surface of the light-emitting unit and the non-light-receiving surface of the solar power generation unit. The connection switching unit connects the storage battery to the solar power generation unit, if the posture detection unit has detected that the light-receiving surface of the solar power generation unit has a posture whereby same is turning towards a first direction in the photoelectric conversion unit; and the connection switching unit connects the storage battery to the light-emitting unit, if the posture detection unit has detected that the light-emitting surface of the light-emitting unit has a posture whereby same is turning towards the first direction in the photoelectric conversion unit.

300 mm Wafer-level, ultra-dense arrays of Au-capped nanopillars with sub-10 nm gaps as reliable SERS substrates

Abstract: The 193 nm deep UV immersion lithography is leveraged to fabricate highly dense and uniform arrays of Au-capped Si nanopillars on a 300 mm wafer level, and the substrates are applied in surface enhanced Raman spectroscopy for reliable molecule detection. Due to the sub-10 nm gap sizes and ultra-high array density with the lattice constant less than 100 nm, our nanopillar based substrates outperform the current commercial products in terms of the signal intensity, reproducibility and fabrication scale.

High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

Abstract: Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm2 V-1 s-1. We show that it is possible to solution-process these materials at low process temperature (225-200 °C yielding mobilities up to 4.4 cm2 V-1 s-1) and demonstrate a facile "ink-on-demand" process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium.