Panasonic

About: Panasonic is a company organization based out in Kadoma, Ôsaka, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 49129 authors who have published 71118 publications receiving 942756 citations. The organization is also known as: Panasonikku Kabushiki-gaisha & Panasonic.

Method and system for controlling medium access in a wireless network

Abstract: A method and system are disclosed that can be applied to achieve high-throughput in a WLAN. Central to the present invention is the use of an SDMA compatible multi-beam antenna system by a WLAN access point. A system based on two types of antennas-dynamic beam forming and fixed beam antennas- is described. A mechanism and protocol are described that implement simultaneous transmissions with respect to an SDMA compatible access point and thereby improve spectral efficiency, and by extension achieve higher throughput. Based on the recognition that current WLAN MAC has major limitations in throughput, certain MAC extensions (that can be applied independently of SDMA) are described. Also disclosed are power-saving and power control techniques that improve battery performance and contribute to a reduction in station size, and a means of reducing channel interference. The present invention also deals with the problem of backward compatibility with conventional devices that implement the protocol that is a subset covered by the present invention.

Phase-Change Materials: Vibrational Softening upon Crystallization and Its Impact on Thermal Properties

Abstract: Crystallization of an amorphous solid is usually accompanied by a signifi cant change of transport properties, such as an increase in thermal and electrical conductivity. This fact underlines the importance of crystalline order for the transport of charge and heat. Phase-change materials, however, reveal a remarkably low thermal conductivity in the crystalline state. The small change in this conductivity upon crystallization points to unique lattice properties. The present investigation reveals that the thermal properties of the amorphous and crystalline state of phase-change materials show remarkable differences such as higher thermal displacements and a more pronounced anharmonic behavior in the crystalline phase. These fi ndings are related to the change of bonding upon crystallization, which leads to an increase of the sound velocity and a softening of the optical phonon modes at the same time.

Liquid crystal panel and liquid crystal display device

Abstract: A liquid crystal panel and a liquid crystal display device including the panel which has a transparent first substrate, a second substrate arranged so as to oppose the first substrate with a space therebetween and liquid crystals filled in the space between the first substrate and the second substrate and having a twist angle which changes in a plane in parallel with a direction of an electric field. The panel has pixels including pixel electrodes connected to source electrodes and counter electrodes with the pixels being arranged in M rows and N columns, where M and N are integers of at least two. Both of the pixel electrodes and the counter electrodes are provided at the second substrate. The panel also includes drain lines independently provided for respective columns, gate lines independently provided for respective rows, and counter lines connected to the counter electrodes. The counter lines include first counter lines at at least one of odd number columns and odd number rows and second counter lines at at least one of even number columns and even number rows with the first and second counter lines being independent of one another.

Semiconductor device and method for manufacturing same

Abstract: An accumulation-mode MISFET comprises: a high-resistance SiC layer 102 epitaxially grown on a SiC substrate 101 ; a well region 103 ; an accumulation channel layer 104 having a multiple δ-doped layer formed on the surface region of the well region 103 ; a contact region 105 ; a gate insulating film 108 ; and a gate electrode 110 . The accumulation channel layer 104 has a structure in which undoped layers 104 b and δ-doped layers 104 a allowing spreading movement of carriers to the undoped layers 104 b under a quantum effect are alternately stacked. A source electrode 111 is provided which enters into the accumulation channel layer 104 and the contact region 105 to come into direct contact with the contact region 105 . It becomes unnecessary that a source region is formed by ion implantation, leading to reduction in fabrication cost.

Information receiving system and method

Abstract: Comprising memory means for recording contents of a program and service additional information containing information relating to a program received in an information receiving apparatus, means for reserving to record a program on the basis of service additional information, means for detecting overlapping of recording time of programs, selecting means for comparing service additional information of programs overlapped in recording time, and selecting a program preferable for the user, means for changing record reservation of program on the basis of the result of selection, viewing trend survey means for investigating the viewing trend of the user, and reproducing means, a program preferable for the user is automatically reserved for recording according to service additional information, or a preferred program out of overlapped programs is automatically selected and recorded in the case of change in broadcasting time.