scispace - formally typeset
Search or ask a question
Institution

Panasonic

CompanyKadoma, Ôsaka, Japan
About: Panasonic is a company organization based out in Kadoma, Ôsaka, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 49129 authors who have published 71118 publications receiving 942756 citations. The organization is also known as: Panasonikku Kabushiki-gaisha & Panasonic.


Papers
More filters
Patent
08 Mar 2010
TL;DR: In this article, the authors propose an approach to optimize the operation of a media player during rendering of media files, which includes authoring software to create a data structure and to populate the created data structure with obtained metadata.
Abstract: Optimizing operation of a media player during rendering of media files. The invention includes authoring software to create a data structure and to populate the created data structure with obtained metadata. The invention also includes rendering software to retrieve the metadata from the data structure and to identify media files to render. In one embodiment, the invention is operable as part of a compressed media format having a set of small files containing metadata, menus, and playlists in a compiled binary format designed for playback on feature-rich personal computer media players as well as low cost media players.

321 citations

Patent
22 Nov 2013
TL;DR: In this article, an information communication method of transmitting a signal that uses a change in luminance is provided. The method includes determining a pattern of the change in the luminance by modulating the signal to be transmitted, and transmitting the signal by a light emitter changing in the measured luminance according to the determined pattern.
Abstract: An information communication method of transmitting a signal is provided that uses a change in luminance. The method includes determining a pattern of the change in luminance by modulating the signal to be transmitted, and transmitting the signal by a light emitter changing in luminance according to the determined pattern. The pattern of the change in luminance is a pattern in which one of two different luminance values occurs in each arbitrary position in a predetermined duration. The determining a pattern of change in luminance includes dividing the predetermined duration into four duration units, so that one of two different luminance value occurs in one duration unit of the four duration units and the other luminance value of the two different luminance value occurs in three duration units of the four duration units, the three duration units are other than the one duration unit.

321 citations

Patent
20 Apr 1995
TL;DR: In this article, the amount of an electron acceptor that has been reduced by electrons generated in a reaction between the substrate and an oxidoreductase is quantified by electrochemically measuring the amount.
Abstract: The biosensor of this invention can quantify a substrate in a sample liquid by electrochemically measuring the amount of an electron acceptor that has been reduced by electrons generated in a reaction between the substrate and an oxidoreductase. The biosensor has an electrically insulating substrate and an electrode system formed on the substrate including a working electrode, a counter electrode and a third electrode used for detecting a liquid junction. The third electrode can be used merely for detecting a liquid junction, or can be used as both a reference electrode and a liquid junction detecting electrode.

319 citations

Journal ArticleDOI
09 Oct 2012
TL;DR: An 8-Mb multi-layered cross-point resistive RAM (ReRAM) macro has been developed with 443 MB/s write throughput (64-bits parallel write per 17.2-ns cycle), which is almost twice as fast as competing methods.
Abstract: Nonvolatile memories with fast write operation at low voltage are required as storage devices to exceed flash memory performance [1–3]. We develop an 8Mb multi-layered cross-point ReRAM macro with 443MB/s write throughput (64b parallel write per 17.2ns cycle), which is almost twice as fast as existing methods, using the fast-switching performance of TaO x ReRAM [4] and the following three techniques to reduce the sneak current in bipolar type cross-point cell array structure in an 0.18μm process. First, memory cell and array technologies reduce the sneak current with a newly developed bidirectional diode as a memory cell select element for the first time. Second, we use a hierarchical bitline (BL) structure for multi-layered cross-point memory with fast and stable current control. Third, we implement a multi-bit write architecture that realizes fast write operation and suppresses sneak current. This work is applicable to both high-density stand-alone and embedded memory with more stacked memory arrays and/or scaling memory cells.

314 citations

Patent
05 Mar 2001
TL;DR: In this article, a polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected is used as an additive to a photoresist composition for immersion lithography.
Abstract: A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected and a monomer having an acid labile group is useful as an additive to a photoresist composition for immersion lithography. When processed by immersion lithography, the resist composition exhibits good water repellency and water slip and produces few development defects.

309 citations


Authors

Showing all 49132 results

NameH-indexPapersCitations
Yang Yang1712644153049
Hideo Hosono1281549100279
Shuicheng Yan12381066192
Akira Yamamoto117199974961
Adam Heller11138141063
Tadashi Kokubo10455749042
Masatoshi Kudo100132453482
Héctor D. Abruña9858538995
Duong Nguyen9867447332
Henning Sirringhaus9646750846
Chao Yang Wang9530726857
George G. Malliaras9438228533
Masaki Takata9059428478
Darrell G. Schlom8864141470
Thomas A. Moore8743730666
Network Information
Related Institutions (5)
Sony Broadcast & Professional Research Laboratories
63.8K papers, 865.6K citations

92% related

Toshiba
83.6K papers, 1M citations

92% related

Hitachi
101.4K papers, 1.4M citations

91% related

Tokyo Institute of Technology
101.6K papers, 2.3M citations

88% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
20227
2021325
2020933
20191,527
20181,588