Panasonic

About: Panasonic is a company organization based out in Kadoma, Ôsaka, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 49129 authors who have published 71118 publications receiving 942756 citations. The organization is also known as: Panasonikku Kabushiki-gaisha & Panasonic.

Plasma processing method and apparatus

Abstract: In a state that a plate-shaped insulator is disposed adjacent to a plate-shaped electrode, a discharge gas containing an inert gas is supplied to a vicinity of a processing object from one gas exhaust port located nearer from the plate-shaped electrode, out of at least two-line gas exhaust ports which are disposed around the plate-shaped electrode and which are formed so as to be surrounded by the plate-shaped insulator and moreover which are different in distance to the plate-shaped electrode from each other, while a discharge control gas is supplied from the other gas exhaust port to the vicinity of the processing object. Simultaneously with the supply of the gases, electric power is supplied to the plate-shaped electrode or the processing object, by which plasma processing of the processing object is carried out. Thus, plasma processing method and apparatus capable of processing for desired fine linear portions with high precision are provided.

Semiconductor device and method of manufacturing the same

Abstract: The method of manufacturing a semiconductor device of the present invention includes steps of; a resin layer forming process in which a face with electrodes of a semiconductor wafer having a plurality of semiconductor elements formed thereon is coated with a resin layer which has a function of sealing it; and a wafer thinning process in which the back face of the semiconductor wafer is ground. The method of manufacturing the semiconductor device of the present invention further includes a process of forming a conductive section on the electrodes of the semiconductor wafer with a plurality of semiconductor elements in such a manner the conductive section reaches to the electrodes. The manufacturing method of the semiconductor device of the present invention still further includes a process of cutting the semiconductor wafer having a plurality of semiconductor elements along boundaries of each semiconductor element. In the thinning process, at least one of a mechanical grinding method, a chemical etching method and a plasma etching method are employed.

User interface controller for text-to-speech synthesizer

Abstract: An application-independent, text-to-speech control system which employs an easy-to-use transport from which a user can control most text-to-speech conversion functions without prior training. It provides a control means by which user designated areas may be sequentially selected, stored and played. Furthermore, moving back and forward through user-selected text may be controlled by the user, with the synthesized speech output maintaining the proper pauses and inflections.

Zoom lens system, imaging device and camera

Abstract: A zoom lens system comprising a first lens unit having negative power, a second lens unit having positive power and a third lens unit having positive power, wherein in zooming from a wide-angle limit to a telephoto limit, the lens units move respectively along an optical axis in such a manner that an interval between the first lens unit and the second lens unit decreases while an interval between the second lens unit and the third lens unit changes so that variable magnification is achieved, the first lens unit comprises one object side negative lens element and one image side positive lens element with a convex surface facing the object side, which have an aspheric surface, and the conditions: n12>1.88 and ν12<26 (n12 and ν12 are refractive index and Abbe number, respectively, of the image side positive lens element of the first lens unit) are satisfied.