Panasonic

About: Panasonic is a company organization based out in Kadoma, Ôsaka, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 49129 authors who have published 71118 publications receiving 942756 citations. The organization is also known as: Panasonikku Kabushiki-gaisha & Panasonic.

Obstacle-detecting apparatus

Abstract: This device can detect an obstacle in a railroad crossing or similar setting by way of image processing independently of a height and a width of an obstacle. The image data read from a video, camera 11 into a multi-valued image memory 13 is compared with background data stored in a background-data creating unit 15 in a data comparator 16. Based on the compared result, a still-object detector 17 detects if an obstacle exists. If it is detected that an obstacle exists and a rod of a crossing gate is down in a gate state detector 18, an alarm output unit 19 serves to output an alarm signal.

Focused language models for improved speech input of structured documents

Abstract: An e-mail message process is provided for use with a personal digital assistant which allows for the use of input speech messaging which is converted to text using a focused language model which is downloaded by a cellular phone connection to an Internet server which provides the focused language model based upon a topic for the intended e-mail message. The text that is generated from the input speech method can be summarized by the e-mail message processor and can be edited by the user. The generated e-mail message can then be transmitted again via cellular connection to an Internet e-mail server for transmitting the e-mail message to a recipient.

Group-based paging for machine-type-communication (MTC) devices

Abstract: The invention relates to a method for paging a group of MTC devices, and for transmitting parameter information to the MTC devices using the paging mechanism. MTC devices are grouped together and a different group ID per group to which the MTC device belongs is assigned to the MTC device. A specific group paging resource indication is determined for each group wherein each MTC device is assigned one of the group paging resource indications. The network pages MTC devices of a group by transmitting a paging message at the corresponding channel resources and including the corresponding group ID. Additionally, the group paging resource indications of several groups of MTC devices can be aligned in such a way with the transmissions and re-transmissions by the network, that the different groups respectively receive the transmission and re-transmissions of the paging message.

Finned heat exchanger

Abstract: A finned heat exchanger includes a plurality of elongated fins which are arranged at a predetermined interval in parallel with one another such that air flows between neighboring ones of the fins in a predetermined direction. A plurality of heat transfer tubes which contain refrigerant passing therethrough are orthogonally inserted through the fins so as to be arranged in a plurality of columns on the fins. When the finned heat exchanger is operated for condensation, the heat transfer tubes are provided in two paths in the vicinity of an inlet for the refrigerant and are provided in one path in the vicinity of an outlet for the refrigerant, such that the heat transfer tubes of the one path occupy about 5 to 30% of all the heat transfer tubes.

1.2-V Supply, 100-nW, 1.09-V Bandgap and 0.7-V Supply, 52.5-nW, 0.55-V Subbandgap Reference Circuits for Nanowatt CMOS LSIs

Abstract: This paper presents bandgap reference (BGR) and sub-BGR circuits for nanowatt LSIs. The circuits consist of a nano-ampere current reference circuit, a bipolar transistor, and proportional-to-absolute-temperature (PTAT) voltage generators. The proposed circuits avoid the use of resistors and contain only MOSFETs and one bipolar transistor. Because the sub-BGR circuit divides the output voltage of the bipolar transistor without resistors, it can operate at a sub-1-V supply. The experimental results obtained in the 0.18-μm CMOS process demonstrated that the BGR circuit could generate a reference voltage of 1.09 V and the sub-BGR circuit could generate one of 0.548 V. The power dissipations of the BGR and sub-BGR circuits corresponded to 100 and 52.5 nW.