Panasonic

About: Panasonic is a company organization based out in Kadoma, Ôsaka, Japan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 49129 authors who have published 71118 publications receiving 942756 citations. The organization is also known as: Panasonikku Kabushiki-gaisha & Panasonic.

Electronic component built-in module and method of manufacturing the same

Abstract: An electronic component built-in module according to the present invention includes a pair of opposed circuit substrates, each of which includes a wiring pattern and an insulating base material containing a resin, an insulating layer that is placed between the pair of circuit substrates and contains an inorganic filler and a resin composition containing a thermosetting resin, an electronic component that is embedded in the insulating layer, and an inner via that is provided in the insulating layer so as to make an electrical connection between wiring patterns provided on different circuit substrates. A glass transition temperature Tg1 of the resin composition contained in the insulating layer and a glass transition temperature Tg2 of the insulating base material included in each of the circuit substrates satisfy a relationship Tg1>Tg2.

Semiconductor device and method for fabricating the same

Abstract: A semiconductor device in accordance with the present invention includes: an insulating layer; a semiconductor region formed on the insulating layer; a trench that surrounds side parts of the semiconductor region and reaches the insulating layer; an isolation insulating film formed in the trench; a semiconductor element in which the semiconductor region serves as an active region; a side oxide film formed by oxidizing the side parts of the semiconductor region and located between the rest of the semiconductor region and the isolation insulating film; and a bottom oxide film that is formed by oxidizing a bottom part of the semiconductor region, located over the entire interface between the rest of the semiconductor region and the insulating layer, and having side surfaces that reach the side oxide film.

Method for design of partial circuit

Abstract: There is no conventional method for precisely estimating under what external conditions each partial circuit, such as a library cell, is utilized in an actual integrated circuit at the time of designing the partial circuit. Therefore, by estimating the external conditions of a partial circuit when used in an integrated circuit so that the partial circuit is designed in accordance with the external conditions, the partial circuit having optimal performance for the external conditions can be designed. The step of external condition estimation can be formed so as to include the technology conversion step which technologically converts the layout for external condition extraction, that is prepared in advance, based on the technology information of an integrated circuit, which is the design objective; the layout extraction step of extracting layout extraction information which is external information influencing the operation of the partial circuit from the layout for external condition extraction that has been technologically converted; and the external condition calculation step of calculating external conditions of the partial circuit from the layout extraction information. In addition, by simply replacing the designed partial circuit with a partial circuit of a circuit for evaluation, the evaluation of the designed partial circuit can be easily carried out.

Manufacturing method for semiconductor devices, and formation apparatus for semiconductor wafer dicing masks

Abstract: On a mask placement-side surface of a semiconductor wafer in which a plurality of semiconductor devices are formed, a mask is placed, while dicing lines for dicing the semiconductor wafer into the respective separate semiconductor devices are defined and a surface of a flawed semiconductor device among the respective semiconductor devices is partially exposed, and then plasma etching is applied to the mask placement-side surface of the semiconductor wafer so as to dice the semiconductor wafer into the respective semiconductor devices along the defined dicing lines, and an exposed portion of the flawed semiconductor device is removed so as to form a removed portion as a flawed semiconductor device distinguishing mark.

Speech synthesis apparatus and speech synthesis method

Abstract: A speech synthesis apparatus appropriately transforms a voice characteristic of speech. The speech synthesis apparatus includes an element storing unit in which speech elements are stored, and a function storing unit in which transformation functions are stored, an adaptability judging unit which derives a degree of similarity by comparing a speech element stored in the element storing unit with an acoustic characteristic of the speech element used for generating a transformation function stored in the function storing unit. The speech synthesis apparatus also includes a selecting unit and voice characteristic transforming unit which transforms, for each speech element stored in the element storing unit, based on the degree of similarity derived by the adaptability judging unit, a voice characteristic of the speech element by applying one of the transformation functions stored in the function storing unit.