ParisTech

About: ParisTech is a education organization based out in Paris, France. It is known for research contribution in the topics: Residual stress & Finite element method. The organization has 1888 authors who have published 1965 publications receiving 55532 citations. The organization is also known as: Paris Institute of Technology & ParisTech Développement.

Attributing the increase in atmospheric CO2 to emitters and absorbers

Abstract: There is no single correct procedure for the attribution of responsibility for growth in atmospheric CO2 concentrations because results are closely dependant on how carbon sinks are accounted for and linked to emissions. Now research that uses two different approaches—one assuming geographically constrained sinks and the other unconstrained—unambiguously attributes the largest share of the historical increase in CO2 to developed countries.

A new method for location selection : A hybrid analysis

Abstract: Site selection is a part of strategic management activities. Location selection decisions involved many factors that may be conflicting in nature. Considering the tangible along with intangible factors in location selection problem, this paper propose a hybrid method of multi criteria decision making (MCDM) that make it possible to select the optimal location that satisfies the decision maker. With the aid of fuzzy AHP, our proposed model considers objective, critical, and subjective factors as the three main common factors in location analysis. The last two factors, critical and subjective factors, are defined by decision maker's judgments for more adoption with the real world problems. Besides, analysis of a numerical example and the sensitivity analysis are discussed to clarify the practicability and effectiveness of the proposed model in the facility location problem.

Multiband superconductivity and nanoscale inhomogeneity at oxide interfaces

Abstract: The two-dimensional electron gas at the LaTiO${}_{3}$/SrTiO${}_{3}$ or LaAlO${}_{3}$/SrTiO${}_{3}$ oxide interfaces becomes superconducting when the carrier density is tuned by gating. The measured resistance and superfluid density reveal an inhomogeneous superconductivity resulting from percolation of filamentary structures of superconducting ``puddles'' with randomly distributed critical temperatures, embedded in a nonsuperconducting matrix. Following the evidence that superconductivity is related to the appearance of high-mobility carriers, we model intrapuddle superconductivity by a multiband system within a weak coupling BCS scheme. The microscopic parameters, extracted by fitting the transport data with a percolative model, yield a consistent description of the dependence of the average intrapuddle critical temperature and superfluid density on the carrier density.

Oxygen hole doping of nanodiamond

Abstract: Surface-graphitized nanodiamonds (NDs) are promising hybrid nanomaterials which appear to combine core properties of diamond with surface properties of graphene-based materials. Here we demonstrate that NDs covered by graphene islands, so-called Fullerene-Like Reconstructions (FLRs), are sensitive to hole doping by molecular oxygen in water. NDs covered by FLRs (NDs-FLRs) are prepared by annealing under vacuum of detonation NDs at 750 °C. We propose that oxygen hole doping is promoted on FLRs due to a unique electronic interaction between the diamond core and the outer graphene layer. As a consequence, NDs-FLRs exhibit positive zeta potential in water, unlike NDs surrounded by several graphitic layers. Surface hole-doped NDs may be promising nanomaterials for new electronic and biomedical applications.