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Institution

Philips

CompanyVantaa, Finland
About: Philips is a company organization based out in Vantaa, Finland. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 68260 authors who have published 99663 publications receiving 1882329 citations. The organization is also known as: Koninklijke Philips Electronics N.V. & Royal Philips Electronics.


Papers
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Journal ArticleDOI
TL;DR: Key requirements and properties of these substrates, as well as methods and readout parameters to test their efficacy in the human body, are described in detail and discussed in the light of current trends toward designing biologically inspired microenviroments for in situ tissue engineering purposes.

264 citations

Journal ArticleDOI
TL;DR: Theory and experiments on optical feedback effects in index-guided single-mode semiconductor lasers are presented in this paper, where evidence is found for the existence of a characteristic parameter C which indicates the relative strength of the optical feedback.
Abstract: Theory and experiments on optical feedback effects in index-guided single-mode semiconductor lasers are presented. Evidence is found for the existence of a characteristic parameter C which indicates the relative strength of the optical feedback. Near the transition ( C \approx 1.0 ) from low to high feedback, the feedback-induced low-frequency intensity noise shows a maximum. At higher feedback hysteresis and instabilities are dominant, whereas the feedback-induced noise is low again.

264 citations

Journal ArticleDOI
P.J.A. Thijs1, L.F. Tiemeijer1, P.I. Kuindersma1, J.J.M. Binsma1, T. van Dongen1 
TL;DR: In this article, a tensile strain-induced heavy-hole-light hole reversal in the valence band was demonstrated using In/sub x/Ga/sub 1-x/As-InGaAsP quantum well devices.
Abstract: Improved performance of 1.5- mu m wavelength lasers and laser amplifiers using strained In/sub x/Ga/sub 1-x/As-InGaAsP quantum well devices is reported. The device structures fabricated to study the effects of strained quantum wells on their performance are described. These devices showed TM mode gain, demonstrating the strain-induced heavy-hole-light hole reversal in the valence band. Lasers using these tensile strained quantum wells show higher and narrower gain spectra and laser amplifiers have a higher differential gain compared to compressively strained quantum well devices. Consequently, the tensile strained quantum well lasers show the smallest linewidth enhancement factor alpha =1.5 (compression alpha =2.5) and the lowest K-factor of 0.22 ns (compression K=0.58 ns), resulting in an estimated intrinsic 3 dB modulation bandwidth of 40 GHz (compression 15 GHz). >

262 citations

Patent
24 Oct 2001
TL;DR: In this article, an interaction simulator, such as a chatterbot, is enabled to simulate an awareness of the user to generate an interaction that is more natural and appropriate than prior art chatterbots.
Abstract: An interaction simulator, such as a chatterbot, is enabled to simulate an awareness of the user to generate an interaction that is more natural and appropriate than prior art chatterbots. For example, the device may employ machine vision to detect the number of persons present or the activity of the user and respond accordingly by interrupting its output or by inviting a conversation or other interaction when a user approaches. The device may modify its responses according to the user's activity, for example, by playing music when the user falls asleep or requesting an introduction when another user speaks. The device may also respond to unrecognized changes in the situation by inquiring about what is going on to stimulate interaction or generate new responses.

262 citations

Journal ArticleDOI
TL;DR: In this article, the martensitic transformations involved were studied by X-ray diffraction and the composition dependence of the Martensitic-transformation characteristics, such as Ms, Mf, As and Af-temperatures, were determined.
Abstract: Alloys of compositions near AuTi, PdTi, and PtTi are B19-type orthorhombic at room temperature and, at higher temperatures, have an ordered CsCl-type structure (B2-type). The martensitic transformations involved were studied by X-ray diffraction. The composition dependence of the martensitic-transformation characteristics, such as Ms, Mf, As and Af-temperatures, were determined. Lattice constants of the high-temperature phases are given.

262 citations


Authors

Showing all 68268 results

NameH-indexPapersCitations
Mark Raymond Adams1471187135038
Dario R. Alessi13635474753
Mohammad Khaja Nazeeruddin12964685630
Sanjay Kumar120205282620
Mark W. Dewhirst11679757525
Carl G. Figdor11656652145
Mathias Fink11690051759
David B. Solit11446952340
Giulio Tononi11451158519
Jie Wu112153756708
Claire M. Fraser10835276292
Michael F. Berger10754052426
Nikolaus Schultz106297120240
Rolf Müller10490550027
Warren J. Manning10260638781
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20235
202239
2021898
20201,428
20191,665
20181,378