scispace - formally typeset
Search or ask a question
Institution

Philips

CompanyVantaa, Finland
About: Philips is a company organization based out in Vantaa, Finland. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 68260 authors who have published 99663 publications receiving 1882329 citations. The organization is also known as: Koninklijke Philips Electronics N.V. & Royal Philips Electronics.


Papers
More filters
Journal ArticleDOI
G. Blasse1
TL;DR: A magnetic study of perovskites La 2 MeMnO 6 (Me = Mg, Co, Ni, Cu) is reported in this paper, where the charge distribution is found to be La 2 ME 2+ Mn 4+ O 6 in contradistinction to earlier reports.

260 citations

Proceedings ArticleDOI
08 May 1989
TL;DR: A technique called 'switched currents,' for analog sampled-data signal processing in the current domain, is introduced and a family of modules that are capable of various computational and memory functions is described.
Abstract: A technique called 'switched currents,' for analog sampled-data signal processing in the current domain, is introduced. A family of modules that are capable of various computational and memory functions is described. The modules are well suited to system building as demonstrated by the simulation of a sixth-order Chebyshev low-pass filter. Circuit techniques that enhance analog performance are offered. >

259 citations

Journal ArticleDOI
24 Mar 2009
TL;DR: A measure of cost-effectiveness for solid-state lighting in the context of other climate change abatement policies is provided, showing great promise as a source of efficient, affordable, color-balanced white light.
Abstract: Lighting constitutes more than 20% of total U.S. electricity consumption, a similar fraction in the European Union, and an even higher fraction in many developing countries. Because many current lighting technologies are highly inefficient, improved technologies for lighting hold great potential for energy savings and for reducing associated greenhouse gas emissions. Solid-state lighting shows great promise as a source of efficient, affordable, color-balanced white light. Indeed, assuming market discount rates, engineering-economic analysis demonstrates that white solid-state lighting already has a lower levelized annual cost (LAC) than incandescent bulbs. The LAC for white solid-state lighting will be lower than that of the most efficient fluorescent bulbs by the end of this decade. However, a large literature indicates that households do not make their decisions in terms of simple expected economic value. After a review of the technology, we compare the electricity consumption, carbon emissions, and cost-effectiveness of current lighting technologies, accounting for expected performance evolution through 2015. We then simulate the lighting electricity consumption and implicit greenhouse gases emissions for the U.S. residential and commercial sectors through 2015 under different policy scenarios: voluntary solid-state lighting adoption, implementation of lighting standards in new construction, and rebate programs or equivalent subsidies. Finally, we provide a measure of cost-effectiveness for solid-state lighting in the context of other climate change abatement policies.

259 citations

Journal ArticleDOI
H. Köstlin1, R. Jost1, W. Lems1
TL;DR: In this paper, the free electron concentration is observed to increase with the Sn content up to a maximum and the optical constants of the films are compared with theoretical values obtained from electrical data.
Abstract: Sn doped In2O3 films are electrically conductive and transparent in the visible range of the spectrum. Films with a plasma wavelength in the 1 μm region have been prepared by spraying a solution of InCl3 and SnCl4 onto a heated substrate. The free electron concentration is observed to increase with the Sn content up to a maximum. A tentative explanation of this maximum is presented. The optical constants of the films are compared with theoretical values obtained from electrical data. At long wavelengths the experimental results are in good agreement with the classical dispersion formula of a free electron gas. At wavelengths in the region of and shorter than the plasma wavelength the damping is found to be smaller than that predicted by classical theory. Films with a rough surface, typical dimensions of the roughness being 10−5 cm, exhibit an additional surface plasmon absorption. In conjunction with the shift of the plasma edge to shorter wavelengths with increasing free electron density, a shift of the UV-absorption edge to shorter wavelengths is observed, corresponding to the rise of the Fermi level within a parabolic conduction band. Consequences for the valence band structure are discussed. Sn-dotierte In2O3-Schichten sind elektrisch leitend und im Sichtbaren transparent. Schichten mit einer Plasmawellenlange im 1 μm-Bereich wurden durch Spruhen einer Losung von InCl3 und SnCl4 auf ein erhitztes Substrat hergestellt. Mit dem Sn-Gehalt steigt die Konzentration freier Elektronen bis zu einem Maximum, fur welches eine mogliche Erklarung gegeben wird. Die optischen Konstanten der Schichten werden mit theoretischen Werten verglichen, die aus den elektrischen Daten zu erwarten sind. Bei grosen Wellenlangen lassen sich die experimentellen Ergebnisse gut mit der klassischen Dispersionsformel fur freie Elektronen wiedergeben. Im Wellenlangenbereich kleiner und gleich der Plasmawellenlange findet man abweichend von der klassischen Theorie eine geringere Dampfung. Schichten mit einer rauhen Oberflache – typisch sind Dimensionen von 10−5 cm – zeigen zusatzlich eine Oberflachenplasmonen-Absorption. Gleichzeitig mit einer Verschiebung der Plasmakante zu kleineren Wellenlangen durch eine gesteigerte Dichte freier Elektronen wird eine Verschiebung der UV-Absorptionskante zu kleineren Wellenlangen beobachtet, was einem Anheben des Fermi-Niveaus in und innerhalb eines parabolischen Leitungsbandes entspricht. Konsequenzen fur die Valenzbandstruktur werden hieraus abgeleitet.

259 citations

Patent
Wang Ling1
01 Sep 2003
TL;DR: A lighting control system network and method of providing same including a remote control unit having a RF signal transmitter and a RF receiver and a number of lighting control units, each of the lighting control devices having a RCA transmitter, a receiver, and a lighting unit associated therewith is described in this article.
Abstract: A lighting control system network and method of providing same including a remote control unit having a RF signal transmitter and a RF receiver and a number of lighting control units, each of the lighting control units having a RF signal transmitter, a RF receiver, and a lighting unit associated therewith The remote control unit and the lighting control units are configured in a master-slave oriented network One of the lighting control units is configured as a master in the network and the remaining lighting control units and the remote control unit are configured as slaves in the network The lighting control units and the remote control units communicate bi-directionally with each other over RF wireless links The network may include sensors for detecting an environmental or system parameter Multiple instances of the lighting control network may be interfaced together to form a building-wide network

258 citations


Authors

Showing all 68268 results

NameH-indexPapersCitations
Mark Raymond Adams1471187135038
Dario R. Alessi13635474753
Mohammad Khaja Nazeeruddin12964685630
Sanjay Kumar120205282620
Mark W. Dewhirst11679757525
Carl G. Figdor11656652145
Mathias Fink11690051759
David B. Solit11446952340
Giulio Tononi11451158519
Jie Wu112153756708
Claire M. Fraser10835276292
Michael F. Berger10754052426
Nikolaus Schultz106297120240
Rolf Müller10490550027
Warren J. Manning10260638781
Network Information
Related Institutions (5)
Katholieke Universiteit Leuven
176.5K papers, 6.2M citations

91% related

Georgia Institute of Technology
119K papers, 4.6M citations

88% related

Stanford University
320.3K papers, 21.8M citations

88% related

National University of Singapore
165.4K papers, 5.4M citations

88% related

IBM
253.9K papers, 7.4M citations

88% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20235
202239
2021898
20201,428
20191,665
20181,378