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Institution

Philips

CompanyVantaa, Finland
About: Philips is a company organization based out in Vantaa, Finland. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 68260 authors who have published 99663 publications receiving 1882329 citations. The organization is also known as: Koninklijke Philips Electronics N.V. & Royal Philips Electronics.


Papers
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Journal ArticleDOI
H. Dammann1, K. Görtler1
TL;DR: In this article, a fully transparent optical component called a multiple phase hologram is inserted into a conventional optical imaging system by means of this artificial hologram, which in fact is a two-dimensional phase grating with a special groove shape.

553 citations

Patent
13 Dec 2004
TL;DR: In this article, the authors provide active and passive thermal or cooling facilities for LED lighting systems, including radiating and convective thermal facilities, including fans, phase change materials, conductive polymers, potting compounds, vents, ducts, and other thermal facilities.
Abstract: Methods and systems are provided for providing active and passive thermal or cooling facilities for LED lighting systems, including radiating and convective thermal facilities, including fans, phase change materials, conductive polymers, potting compounds, vents, ducts, and other thermal facilities.

551 citations

Journal ArticleDOI
G. Frank1, H. Köstlin1
TL;DR: In this article, a defect model for tin-doped In2O3:Sn is developed, which comprises two kinds of interstitial oxygen, one of which is loosely bound to tin, the other forming a strongly bound Sn2O4 complex.
Abstract: Tin-doped In2O3 layers were prepared by the spray technique with doping concentrationsc Sn between 1 and 20 at. % and annealed at 500 °C in gas atmospheres of varying oxygen partial pressures. The room-temperature electrical properties were measured. Maximum carrier concentrationsN=1.5×1021cm−3 and minimum resistivities ϱ=1.3×10−4 Ω cm are obtained if the layers are doped withc Sn≈9 at. % and annealed in an atmosphere of oxygen partial pressurep O2 ⋦10−20 bar. At fixed doping concentration, the carrier mobility increases with decreasing oxygen pressure. The maximum obtainable mobility can be described in terms of electron scattering by ionized impurities. From an analysis of the carrier concentration and additional precision measurements of the lattice constants and film thicknesses, a defect model for In2O3:Sn is developed. This comprises two kinds of interstitial oxygen, one of which is loosely bound to tin, the other forming a strongly bound Sn2O4 complex. At low doping concentrationc Sn≲4 at. % the carrier concentration is governed by the loosely bound tin-oxygen defects which decompose if the oxygen partial pressure is low. The carrier concentration follows from a relationN=K 1 ·p O2 −1/8 ·(3 ×1010 × cSn −N)1/4 with an equilibrium constantK 1=1.4×1015 cm−9/4bar1/8, determined from our measurements.

551 citations

Journal ArticleDOI
H. de Lange Dzn1
TL;DR: In this article, the authors investigated the shape of the attenuation characteristics obtained with the experiments and calculated from investigations of other authors, and showed that the existing theories on flicker fusion provide no explanation for the shape.
Abstract: A generally known method for the dynamic investigation of any linear system is recalled to mind. Applied to the visual organ with sinusoidally modulated light, the dynamic nature of the system fovea→brightness perception is embodied in attenuation characteristics, by plotting the ratio output amplitude over input amplitude against frequency at constant mean luminance. This manner of investigation, first applied in previous papers with white light, is expanded over a greater part of the range of cone vision and is continued with colored light. The existing theories on flicker fusion provide no explanation for the shape of the attenuation characteristics obtained with the experiments and calculated from investigations of other authors.

549 citations

Patent
10 Dec 2009
Abstract: A speech signal processing system comprises an audio processor (103) for providing a first signal representing an acoustic speech signal of a speaker. An EMG processor (109) provides a second signal which represents an electromyographic signal for the speaker captured simultaneously with the acoustic speech signal. A speech processor (105) is arranged to process the first signal in response to the second signal to generate a modified speech signal. The processing may for example be a beam forming, noise compensation, or speech encoding. Improved speech processing may be achieved in particular in an acoustically noisy environment.

547 citations


Authors

Showing all 68268 results

NameH-indexPapersCitations
Mark Raymond Adams1471187135038
Dario R. Alessi13635474753
Mohammad Khaja Nazeeruddin12964685630
Sanjay Kumar120205282620
Mark W. Dewhirst11679757525
Carl G. Figdor11656652145
Mathias Fink11690051759
David B. Solit11446952340
Giulio Tononi11451158519
Jie Wu112153756708
Claire M. Fraser10835276292
Michael F. Berger10754052426
Nikolaus Schultz106297120240
Rolf Müller10490550027
Warren J. Manning10260638781
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20235
202239
2021898
20201,428
20191,665
20181,378