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Institution

Purdue University

EducationWest Lafayette, Indiana, United States
About: Purdue University is a education organization based out in West Lafayette, Indiana, United States. It is known for research contribution in the topics: Population & Heat transfer. The organization has 73219 authors who have published 163563 publications receiving 5775236 citations. The organization is also known as: Purdue & Purdue-West Lafayette.


Papers
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Proceedings ArticleDOI
07 Dec 1998
TL;DR: This paper reviews the architecture for a distributed intrusion detection system based on multiple independent entities working collectively, and calls these entities autonomous agents, which solves some of the problems previously mentioned.
Abstract: The intrusion detection system architectures commonly used in commercial and research systems have a number of problems that limit their configurability, scalability or efficiency. The most common shortcoming in the existing architectures is that they are built around a single monolithic entity that does most of the data collection and processing. In this paper, we review our architecture for a distributed intrusion detection system based on multiple independent entities working collectively. We call these entities autonomous agents. This approach solves some of the problems previously mentioned. We present the motivation and description of the approach, partial results obtained from an early prototype, a discussion of design and implementation issues, and directions for future work.

590 citations

Journal ArticleDOI
TL;DR: Combinations of ethylene and methyl jasmonate (E/MeJA) synergistically induced members of both groups 1 and 5 of the pathogenesis-related (PR) superfamily of defense genes, which resulted in a synergistic induction of PR-1b and osmotin (PR-5) mRNA accumulation in tobacco seedlings.
Abstract: Combinations of ethylene and methyl jasmonate (E/MeJA) synergistically induced members of both groups 1 and 5 of the pathogenesis-related (PR) superfamily of defense genes. E/MeJA caused a synergistic induction of PR-1b and osmotin (PR-5) mRNA accumulation in tobacco seedlings. E/MeJA also synergistically activated the osmotin promoter fused to a [beta]-glucuronidase marker gene in a tissue-specific manner. The E/MeJA responsiveness of the osmotin promoter was localized on a -248 to +45 fragment that exhibited responsiveness to several other inducers. E/MeJA induction also resulted in osmotin protein accumulation to levels similar to those induced by osmotic stress. Of the several known inducers of the osmotin gene, including salicylic acid (SA), fungal infection is the only other condition known to cause substantial osmotin protein accumulation in Wisconsin 38, a tobacco cultivar that does not respond hypersensitively to tobacco mosaic virus. Based on the ability of the protein kinase C inhibitor 1-(5-isoquinolinylsulfonyl)-2-methylpiperazine to block ethylene induction of PR-1b mRNA accumulation and its inability to block osmotin mRNA induction by ethylene, these two PR gene groups appeared to have at least partially separate signal transduction pathways. Stimulation of osmotin mRNA accumulation by okadaic acid indicated that another protein kinase system is involved in regulation of the osmotin gene. SA, which is known to induce pathogen resistance in tobacco, could not induce the osmotin gene as much as E/MeJA and neither could it induce PR-1b as much as SA and MeJA combined.

590 citations

Journal ArticleDOI
TL;DR: In this article, the results of computer simulations used to determine the domains of applicability of the first-order Born and Rytov approximations in diffraction tomography for cross-sectional (or three-dimensional) imaging of biosystems are shown.
Abstract: In this paper, the results of computer simulations used to determine the domains of applicability of the first-order Born and Rytov approximations in diffraction tomography for cross-sectional (or three-dimensional) imaging of biosystems are shown. These computer simulations were conducted on single cylinders, since in this case analytical expressions are available for the exact scattered fields. The simulations establish the first-order Born approximation to be valid for objects where the product of the relative refractive index and the diameter of the cylinder is less than 0.35 lambda. The first-order Rytov approximation is valid with essentially no constraint on the size of the cylinders; however, the relative refractive index must be less than a few percent. We have also reviewed the assumptions made in the first-order Born and Rytov approximations for diffraction tomography. Further, we have reviewed the derivation of the Fourier Diffraction projection Theorem, which forms the basis of the first-order reconstruction algorithms. We then show how this derivation points to new FFT-based implementations for the higher order diffraction tomography algorithms that are currently being developed.

590 citations

Journal ArticleDOI
TL;DR: In this article, the effect of free carriers on the optical constants has been determined by using reflectivity and absorption measurements in the region 5 to 35 micron, and the significance of ${m}_{s}$ is considered for four different types of energy band structure.
Abstract: By using reflectivity and absorption measurements in the region 5 to 35 micron, the effect of free carriers on the optical constants has been determined for $n$- and $p$-type germanium, silicon, and indium antimonide, and for $n$-type indium arsenide. The contribution of the free carriers to the electric susceptibility is obtained from the optical constants. A carrier effective mass, ${m}_{s}$, is defined in terms of the susceptibility, and the significance of ${m}_{s}$ is considered for four different types of energy band structure. The experimental values of ${m}_{s}$ are compared with those calculated by using data from other experiments. Good agreement was found for $n$- and $p$-type silicon, $n$-type germanium, and $p$-type indium antimonide. In $p$-type germanium, the susceptibility due to transitions between the overlapping bands in the valence band was taken into account. However, the resulting ${m}_{s}$, for a sample of \ensuremath{\sim}${10}^{19}$ ${\mathrm{cm}}^{\ensuremath{-}3}$ impurity concentration, is larger by a factor of 1.8 than that calculated by using cyclotron resonance data. In $n$-type indium antimonide ${m}_{s}$ increases with carrier concentration. If one assumes ${m}_{s}$ to be energy-dependent, the shape of the conduction band calculated is consistent with previously reported measurements of the shift of the intrinsic absorption edge with electron concentrations. In the case of $n$-type indium arsenide, ${m}_{s}$ differs from the effective mass reported from thermoelectric measurements but gives good agreement with the values determined from the shift of the intrinsic absorption edge for an impure specimen.

590 citations


Authors

Showing all 73693 results

NameH-indexPapersCitations
Yi Cui2201015199725
Yi Chen2174342293080
David Miller2032573204840
Hongjie Dai197570182579
Chris Sander178713233287
Richard A. Gibbs172889249708
Richard H. Friend1691182140032
Charles M. Lieber165521132811
Jian-Kang Zhu161550105551
David W. Johnson1602714140778
Robert Stone1601756167901
Tobin J. Marks1591621111604
Joseph Wang158128298799
Ed Diener153401186491
Wei Zheng1511929120209
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
2023194
2022834
20217,499
20207,699
20197,294
20186,840