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Institution

Qualcomm

CompanyFarnborough, United Kingdom
About: Qualcomm is a company organization based out in Farnborough, United Kingdom. It is known for research contribution in the topics: Wireless & Signal. The organization has 19408 authors who have published 38405 publications receiving 804693 citations. The organization is also known as: Qualcomm Incorporated & Qualcomm, Inc..


Papers
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Patent
Sean S. Rogers1
16 Jun 2008
TL;DR: In this paper, a method and system for electronic access security uses touches and movements on a touch sensitive surface to determine graphical passcode that are used in a manner similar to passwords.
Abstract: A method and system for electronic access security uses touches and movements on a touch sensitive surface to determine graphical passcode that are used in a manner similar to passwords. Graphical passcodes comprise various combinations of swipes, taps or drags on a touchscreen surface as defined by a user. A user's selected graphical passcode is stored in memory for comparison to subsequent entries of graphical passcode in order to authenticate the users. An envelope may be generated to define a range of acceptable pressure, speed, coordinate positions or other parameters, as a function of time or position, required for passcode authentication. The envelope may be stored in a computer memory and is used to authenticate a user by determine whether an entered graphical passcode falls within the envelope.

160 citations

Patent
Kiyotaka Kawashima1
27 Sep 2013
TL;DR: In this paper, a wireless power receiver includes a first inductive element configured to receive wireless charging power from a transmitter and a position detector configured to determine a lateral position of the receiver relative to the transmitter based on characteristics of the first and second inductive elements.
Abstract: This disclosure provides systems, methods and apparatus for wireless power transfer and particularly wireless power transfer to remote systems such as electric vehicles. In one aspect, a wireless power receiver includes a first inductive element configured to receive wireless charging power from a transmitter. The wireless power receiver further includes a second inductive element, laterally separated from the first, configured to receive wireless charging power from the transmitter. The wireless power receiver further includes a position detector configured to determine a lateral position of the receiver relative to the transmitter based on characteristics of the first and second inductive elements.

160 citations

Proceedings Article
11 Feb 2019
TL;DR: In this paper, the authors extend the principle of equivariance to symmetry transformations to local gauge transformations, which enables the development of a very general class of convolutional neural networks on manifolds that depend only on the intrinsic geometry, including many popular methods from equivariant and geometric deep learning.
Abstract: The principle of equivariance to symmetry transformations enables a theoretically grounded approach to neural network architecture design. Equivariant networks have shown excellent performance and data efficiency on vision and medical imaging problems that exhibit symmetries. Here we show how this principle can be extended beyond global symmetries to local gauge transformations. This enables the development of a very general class of convolutional neural networks on manifolds that depend only on the intrinsic geometry, and which includes many popular methods from equivariant and geometric deep learning. We implement gauge equivariant CNNs for signals defined on the surface of the icosahedron, which provides a reasonable approximation of the sphere. By choosing to work with this very regular manifold, we are able to implement the gauge equivariant convolution using a single conv2d call, making it a highly scalable and practical alternative to Spherical CNNs. Using this method, we demonstrate substantial improvements over previous methods on the task of segmenting omnidirectional images and global climate patterns.

160 citations

Patent
Wen-Jian Lin1, Brian W. Arbuckle1, Brian J. Gally1, Philip D. Floyd1, Lauren Palmateer1 
08 May 2009
TL;DR: In this paper, a first electrode and a sacrificial layer are sequentially formed on a substrate, and then first openings for forming supports inside are formed in the first electrodes and the sacrificial layers.
Abstract: A first electrode and a sacrificial layer are sequentially formed on a substrate, and then first openings for forming supports inside are formed in the first electrode and the sacrificial layer. The supports are formed in the first openings, and then a second electrode is formed on the sacrificial layer and the supports, thus forming a micro electro mechanical system structure. Afterward, an adhesive is used to adhere and fix a protection structure to the substrate for forming a chamber to enclose the micro electro mechanical system structure, and at least one second opening is preserved on sidewalls of the chamber. A release etch process is subsequently employed to remove the sacrificial layer through the second opening in order to form cavities in an optical interference reflection structure. Finally, the second opening is closed to seal the optical interference reflection structure between the substrate and the protection structure.

160 citations

Journal ArticleDOI
TL;DR: In this article, the power-law relationship between strain rate and stress was observed at most of the temperatures at which pure tin, Sn-3.5Ag and Sn-5Sb electronic solder alloys, have been studied at various temperatures between ambient and 473 K (homologous temperature 0.58 to 0.85).
Abstract: Creep deformation characteristics of pure tin, and Sn-3.5Ag and Sn-5Sb electronic solder alloys, have been studied at various temperatures between ambient and 473 K (homologous temperature 0.58 to 0.85). Power-law relationships between strain rate and stress were observed at most of the temperatures. The stress exponent (n=7.6, 5.0, and 5.0) and activation energy (Q c =60.3, 60.7, and 44.7 kJ/mol) values were obtained in the case of tin, Sn-3.5Ag, and Sn-5Sb respectively. Based on n and Q c values, it is suggested that the rate controlling creep-deformation mechanism is dislocation climb controlled by lattice diffusion in pure tin and Sn-3.5Ag alloy, and viscous glide controlled by pipe diffusion in Sn-5Sb alloy. The results on Sn-3.5Ag bulk material are compared with the initial results on solder bump arrays.

160 citations


Authors

Showing all 19413 results

NameH-indexPapersCitations
Jian Yang1421818111166
Xiaodong Wang1351573117552
Jeffrey G. Andrews11056263334
Martin Vetterli10576157825
Vinod Menon10126960241
Michael I. Miller9259934915
David Tse9243867248
Kannan Ramchandran9159234845
Michael Luby8928234894
Max Welling8944164602
R. Srikant8443226439
Jiaya Jia8029433545
Hai Li7957033848
Simon Haykin7745462085
Christopher W. Bielawski7633432512
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20229
20211,188
20202,266
20192,224
20182,124
20171,477