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Institution

Raytheon

CompanyWaltham, Massachusetts, United States
About: Raytheon is a company organization based out in Waltham, Massachusetts, United States. It is known for research contribution in the topics: Signal & Antenna (radio). The organization has 15290 authors who have published 18973 publications receiving 300052 citations.
Topics: Signal, Antenna (radio), Radar, Turbine, Amplifier


Papers
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Journal ArticleDOI
H. J. Hook1
TL;DR: In this article, the Fe2O3-FeO-BaO in the vicinity of the compound BaFe12O19 were studied at temperatures from 1300° to 1550°C and oxygen pressures from 10−2 to 102 atm.
Abstract: Compositions in the system Fe2O3-FeO-BaO in the vicinity of the compound BaFe12O19 were studied at temperatures from 1300° to 1550°C and oxygen pressures from 10−2 to 102 atm. Equilibrium relations involving several barium ferrous ferrites are described. Barium ferrite can be crystallized congruently from the melt at 40 atm oxygen pressure and 15400°C.

75 citations

Journal ArticleDOI
H. Statz1, G. A. deMars1, L. Davis1, A. Adams1
TL;DR: In this paper, steady-state and nonsteady-state $p$-type inversion layer conductance measurements can be understood in terms of two sets of surface states: one with a great density outside the oxide and the other with a smaller density at the semiconductor-semiconductor oxide interface.
Abstract: On silicon and germanium, steady-state and nonsteady-state $p$-type inversion layer conductance measurements can be understood in terms of two sets of surface states: one with a great density outside the oxide and the other with a smaller density at the semiconductor-semiconductor oxide interface. The interface states in silicon and germanium lie 0.455 and 0.138 ev, respectively, below the middle of the gap. There may also be interface states in the upper half of the gap; however, for their determination, measurement on $n$-type inversion layers would have to be made. The density of the interface states in silicon is about 1.4\ifmmode\times\else\texttimes\fi{}${10}^{12}$ states/${\mathrm{cm}}^{2}$; the density in germanium is one-tenth this value. Various mechanisms of charge transfer through the oxide film are considered and compared with experimental data.

75 citations

Patent
Manfred G. Unkauf1
05 Jan 1976
TL;DR: In this article, a differentially adaptive receiver system is proposed, in which correction is provided for degradation of performance caused by overlapping of adjacent data pulses, and the received signals are detected against the reference signal as in an ideal matched filter receiver.
Abstract: A differentially adaptive receiver system in which correction is provided for degradation of performance caused by overlapping of adjacent data pulses. A reference signal is produced having the same complex envelope as the received signals and having a constant phase state independent of changes of phase state of the received signals. The received signals are detected against the reference signal as in an ideal matched filter receiver. The detected signals are integrated by an integrate and dump filter over the duration of the pulse period. A correction signal representing the amount of overlap between overlapping adjacent pulses is summed with the output of the integrated dump filter. The sum of the correction signal and integrate and dump filter output is sampled and held by sample and hold circuit to produce the digital data output.

75 citations

Journal ArticleDOI
R.J. Spindler1
TL;DR: In this paper, the potential energy function was computed for all vibrational levels up to the dissociation limit by numerical solutions of the radial Schrodinger equation, and the resulting sets of Franck-Condon factors were given for all allowed bands of each system.
Abstract: Franck-Condon factors are reported for the ( B 1 Σ + u - X 1 Σ + g ), ( I 1 Π g - B 1 Σ + u ) and ( d 3 Π u - a 3 Σ + g ) band systems of molecular hydrogen. In each electronic state, wavefunctions were computed for all vibrational levels up to the dissociation limit by numerical solutions of the radial Schrodinger equation in which the potential energy function was entered in tabular form at equally spaced intervals of 0·01 A in the range of nuclear separations r = 0–25 A. In the X and B states the potential curves were obtained by interpolation and extrapolation of Rydberg-Klein-Rees (RKR) potential data; in the I, a and d states the potential curves were constructed from the Morse formula. The resulting sets of Franck-Condon factors are given for all allowed bands of each system. It is shown that the row and column sums in these matrices do not and should not all equal unity.

75 citations

Patent
Garry N. Hulderman1
30 Jun 1995
TL;DR: In this paper, a 35-300 GHz millimeter wave electronic scanning sensor is proposed for use in collision avoidance applications, and the heart of the present invention is a heterodyne receive antenna that may be used in many applications, including radiometric or radar applications.
Abstract: Radar apparatus (10) that includes a millimeter wave radar transmitter (11) comprising a flood beam antenna (17), and a radar signal processor (30) for processing radar return signals to produce radar output signals. An RF sensor (20) comprising a receive antenna (21) includes a plurality of antenna elements (21a), a plurality of mixers (22) respectively coupled to outputs of the plurality of antenna elements (21a) and coupled to the transmitter (14) by means of a coupler (26), a plurality of filter circuits (23) respectively coupled to outputs of the plurality of mixers (22), a multiplexer (24) coupled to outputs of the plurality of filter circuits (23) that comprises as a multiple input, single output switch (25) for sequentially outputting video signals derived from radar signals received by each of the receive antenna elements (21a), and a lens (27) for imaging radar returns onto each of the plurality of antenna elements (21a). The heart of the present invention is a heterodyne receive antenna (21) that may be used in many applications, including radiometric or radar applications, and the like. The present invention provides for a 35-300 GHz millimeter wave electronic scanning sensor (20) for use in collision avoidance applications, and the like.

75 citations


Authors

Showing all 15293 results

NameH-indexPapersCitations
Peter J. Kahrilas10958646064
Edward J. Wollack104732102070
Duong Nguyen9867447332
Miroslav Krstic9595542886
Steven L. Suib8986234189
Gabriel M. Rebeiz8780632443
Charles W. Engelbracht8321028137
Paul A. Grayburn7739726880
Eric J. Huang7220122172
Thomas F. Eck7215032965
David M. Margolis7022717314
David W. T. Griffith6528814232
Gerhard Klimeck6568518447
Nickolay A. Krotkov6321911250
Olaf Stüve6329014268
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20232
20228
2021265
2020655
2019579
2018457