Institution
Raytheon
Company•Waltham, Massachusetts, United States•
About: Raytheon is a company organization based out in Waltham, Massachusetts, United States. It is known for research contribution in the topics: Signal & Antenna (radio). The organization has 15290 authors who have published 18973 publications receiving 300052 citations.
Topics: Signal, Antenna (radio), Radar, Layer (electronics), Turbine
Papers published on a yearly basis
Papers
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TL;DR: In this paper, a very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array and its performance in quantum efficiency, NE/spl Delta/T, minimum resolvable temperature (MRTD), uniformity, and operability was discussed.
Abstract: A 9-/spl mu/m cutoff 256/spl times/256 hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated. Excellent imagery, with a noise equivalent differential temperature (NE/spl Delta/T) of 26 mK has been achieved. In this paper, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array and its performance in quantum efficiency, NE/spl Delta/T, minimum resolvable temperature (MRTD), uniformity, and operability.
72 citations
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26 May 1995TL;DR: In this paper, a multi-chip module consisting of vertically layered substrates and including a plurality of coaxial interconnects formed between and through the substrate layers is considered, and the characteristic impedance of the coaxial wires is determined by the selection of the outer diameters of the drilled holes for the outer and center vias.
Abstract: A multi-chip-module comprising a plurality of vertically layered substrates and including a plurality of coaxial inter-connects formed between and through the substrate layers. Each of the coaxial inter-connects is formed by a process wherein: an outer hole (aperture) is drilled through the substrate and lined with an electrically conductive material to form an outer via; the outer via is filled with a dielectric material; and, an inner hole (aperture) is drilled through the dielectric material and filled with an electrically conductive material to form a center via. The characteristic impedance of the coaxial inter-connect is determined by the selection of the outer diameters of the drilled holes for the outer and center vias.
72 citations
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31 May 2001TL;DR: In this article, a transistor structure with a source and a drain electrode is provided, and a doped cap layer of GaxIn1−xAs is disposed below the source electrode and the drain electrode and provides a cap layer opening.
Abstract: A transistor structure is provided. This structure has a source electrode and a drain electrode. A doped cap layer of GaxIn1−xAs is disposed below the source electrode and the drain electrode and provides a cap layer opening. An undoped resistive layer of GaxIn1−xAs is disposed below the cap layer and defines a resistive layer opening in registration with the cap layer opening and having a first width. A Schottky layer of AlyIn1−yAs is disposed below the resistive layer. An undoped channel layer is disposed below the Schottky layer. A semi-insulating substrate is disposed below the channel layer. A top surface of the Schottky layer beneath the resistive layer opening provides a recess having a second width smaller than the first width. A gate electrode is in contact with a bottom surface of the recess provided by the Schottky layer.
72 citations
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TL;DR: In this article, a functional complete set of logic gates based on resonant interband tunneling diodes (RITDs) with a maximum operating frequency in excess of 12 GHz was demonstrated.
Abstract: We report on the successful demonstration of a functionally complete set of logic gates based on resonant interband tunneling diodes (RITDs) with a maximum operating frequency in excess of 12 GHz. At this high frequency of operation, the power dissipation is remarkably low-on the order of 0.5 mW per gate. The circuits for all gates, AND, OR, XOR, and INV, shared the same layout geometry, consisting of two Schottky diodes and three RITDs. Logical functionality was determined solely by varying the relative areas of the devices.
72 citations
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01 Jan 1986TL;DR: In this article, the use of devices in microwave circuits is discussed, including semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow-and broadband techniques, packaging and thermal considerations.
Abstract: This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations. Perhaps the most comprehensive text on GaAs FET technology and its practical application. It covers the use of MESFET devices in microwave circuits, such as low-noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. This text is a classic reference for all engineers involved in the development of solid state microwave devices.
71 citations
Authors
Showing all 15293 results
Name | H-index | Papers | Citations |
---|---|---|---|
Peter J. Kahrilas | 109 | 586 | 46064 |
Edward J. Wollack | 104 | 732 | 102070 |
Duong Nguyen | 98 | 674 | 47332 |
Miroslav Krstic | 95 | 955 | 42886 |
Steven L. Suib | 89 | 862 | 34189 |
Gabriel M. Rebeiz | 87 | 806 | 32443 |
Charles W. Engelbracht | 83 | 210 | 28137 |
Paul A. Grayburn | 77 | 397 | 26880 |
Eric J. Huang | 72 | 201 | 22172 |
Thomas F. Eck | 72 | 150 | 32965 |
David M. Margolis | 70 | 227 | 17314 |
David W. T. Griffith | 65 | 288 | 14232 |
Gerhard Klimeck | 65 | 685 | 18447 |
Nickolay A. Krotkov | 63 | 219 | 11250 |
Olaf Stüve | 63 | 290 | 14268 |