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Institution

Raytheon

CompanyWaltham, Massachusetts, United States
About: Raytheon is a company organization based out in Waltham, Massachusetts, United States. It is known for research contribution in the topics: Signal & Antenna (radio). The organization has 15290 authors who have published 18973 publications receiving 300052 citations.
Topics: Signal, Antenna (radio), Radar, Turbine, Amplifier


Papers
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Patent
02 Nov 1973
TL;DR: In this article, a signal processor including a programmable arithmetic controller and a pipeline arithmetic unit controlled by such controller is described, where the arithmetic unit includes a plurality of serially coupled processing levels.
Abstract: A signal processor including a programmable arithmetic controller and a pipeline arithmetic unit controlled by such controller is disclosed. The arithmetic unit includes a plurality of serially coupled processing levels. The arithmetic controller includes a corresponding plurality of serially coupled control levels, each one of such control levels being coupled to a corresponding one of the processing levels. Each one of the processing levels passes digital data applied thereto in accordance with a control instruction applied to such processing level by the arithmetic controller. As data passes through the various processing levels, the control instruction associated with such data passes through the corresponding control level so that such control instruction ''''follows'''' such data as both data and control instruction pass through the processor. In this way the processor is adapted to start a new process concurrently as such processor completes a prior process.

115 citations

Journal ArticleDOI
P.M. White1, R.M. Healy
TL;DR: In this paper, an improved equivalent circuit for MESFET and HEMT devices under zero drain bias pinched-off conditions is proposed, where the gate and drain capacitances evaluated from low-frequency Y parameters using this circuit are approximately equal under conditions where equality would be expected from bond pad geometry considerations.
Abstract: An improved equivalent circuit for MESFET and HEMT devices under zero drain bias pinched-off conditions is proposed. Parasitic gate and drain capacitances evaluated from low-frequency Y parameters using this circuit are approximately equal under conditions where equality would be expected from bond pad geometry considerations. In contrast, the previously used circuit considerably overestimates parasitic drain capacitance. >

115 citations

Journal ArticleDOI
TL;DR: A sparse tensor discriminant color space (STDCS) model that represents a color image as a third-order tensor in this paper cannot only keep the underlying spatial structure of color images but also enhance robustness and give intuitionistic or semantic interpretation.
Abstract: As one of the fundamental features, color provides useful information and plays an important role for face recognition. Generally, the choice of a color space is different for different visual tasks. How can a color space be sought for the specific face recognition problem? To address this problem, we propose a sparse tensor discriminant color space (STDCS) model that represents a color image as a third-order tensor in this paper. The model cannot only keep the underlying spatial structure of color images but also enhance robustness and give intuitionistic or semantic interpretation. STDCS transforms the eigenvalue problem to a series of regression problems. Then one spare color space transformation matrix and two sparse discriminant projection matrices are obtained by applying lasso or elastic net on the regression problems. The experiments on three color face databases, AR, Georgia Tech, and Labeled Faces in the Wild face databases, show that both the performance and the robustness of the proposed method outperform those of the state-of-the-art TDCS model.

114 citations

Patent
William E. Hoke1
18 Jul 1990
TL;DR: In this article, a pseudomorphic high electron mobility transistor includes a substrate for supporting a semiconductor active region, which includes a channel layer comprised of InGaAs, which when disposed over said substrate develops an intrinsic lattice tensile strain and charge donor layer comprising of a wide bandgap Group III-V material, said layer being arranged to donate charge to said channel layer.
Abstract: A pseudomorphic high electron mobility transistor includes a substrate for supporting a semiconductor active region. The semiconductor active region includes a channel layer comprised of InGaAs, which when disposed over said substrate develops an intrinsic lattice tensile strain and charge donor layer comprised of a wide bandgap Group III-V material, said layer being arranged to donate charge to said channel layer. The HEMT further includes a strain compensating layer having an intrinsic lattice compressive strain which is disposed between said channel layer and said substrate. The strain compensating layer has a strain characteristic which compensates for the tensile strain in the channel layer permitting said channel layer to be grow thicker or with high In concentration prior to reaching its so-called critical thickness.

114 citations

Journal ArticleDOI
TL;DR: The Alcator C-Mod tokamak as discussed by the authors is a high-field toroidal confinement device that uses high-power radio frequency (RF) waves for heating and current drive with innovative launching structures.
Abstract: The object of this review is to summarize the achievements of research on the Alcator C-Mod tokamak [Hutchinson et al., Phys. Plasmas 1, 1511 (1994) and Marmar, Fusion Sci. Technol. 51, 261 (2007)] and to place that research in the context of the quest for practical fusion energy. C-Mod is a compact, high-field tokamak, whose unique design and operating parameters have produced a wealth of new and important results since it began operation in 1993, contributing data that extends tests of critical physical models into new parameter ranges and into new regimes. Using only high-power radio frequency (RF) waves for heating and current drive with innovative launching structures, C-Mod operates routinely at reactor level power densities and achieves plasma pressures higher than any other toroidal confinement device. C-Mod spearheaded the development of the vertical-target divertor and has always operated with high-Z metal plasma facing components—approaches subsequently adopted for ITER. C-Mod has made ground-breaking discoveries in divertor physics and plasma-material interactions at reactor-like power and particle fluxes and elucidated the critical role of cross-field transport in divertor operation, edge flows and the tokamak density limit. C-Mod developed the I-mode and the Enhanced Dα H-mode regimes, which have high performance without large edge localized modes and with pedestal transport self-regulated by short-wavelength electromagnetic waves. C-Mod has carried out pioneering studies of intrinsic rotation and demonstrated that self-generated flow shear can be strong enough in some cases to significantly modify transport. C-Mod made the first quantitative link between the pedestal temperature and the H-mode's performance, showing that the observed self-similar temperature profiles were consistent with critical-gradient-length theories and followed up with quantitative tests of nonlinear gyrokinetic models. RF research highlights include direct experimental observation of ion cyclotron range of frequency (ICRF) mode-conversion, ICRF flow drive, demonstration of lower-hybrid current drive at ITER-like densities and fields and, using a set of novel diagnostics, extensive validation of advanced RF codes. Disruption studies on C-Mod provided the first observation of non-axisymmetric halo currents and non-axisymmetric radiation in mitigated disruptions. A summary of important achievements and discoveries are included.

113 citations


Authors

Showing all 15293 results

NameH-indexPapersCitations
Peter J. Kahrilas10958646064
Edward J. Wollack104732102070
Duong Nguyen9867447332
Miroslav Krstic9595542886
Steven L. Suib8986234189
Gabriel M. Rebeiz8780632443
Charles W. Engelbracht8321028137
Paul A. Grayburn7739726880
Eric J. Huang7220122172
Thomas F. Eck7215032965
David M. Margolis7022717314
David W. T. Griffith6528814232
Gerhard Klimeck6568518447
Nickolay A. Krotkov6321911250
Olaf Stüve6329014268
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20232
20228
2021265
2020655
2019579
2018457