Rensselaer Polytechnic Institute

About: Rensselaer Polytechnic Institute is a education organization based out in Troy, New York, United States. It is known for research contribution in the topics: Terahertz radiation & Population. The organization has 19024 authors who have published 39922 publications receiving 1414699 citations. The organization is also known as: RPI & Rensselaer Institute.

Synthesis and Characterization of Pyridine-Based Polybenzimidazoles for High Temperature Polymer Electrolyte Membrane Fuel Cell Applications

Abstract: A series of polybenzimidazoles (PBIs) incorporating main chain pyridine groups were synthesized from the pyridine dicarboxylic acids (2,4-, 2,5-, 2,6- and 3,5-) and 3,3′,4,4′-tetraaminobiphenyl, using polyphosphoric acid (PPA) as both solvent and polycondensation reagent. A novel process, termed the PPA process, has been developed to prepare phosphoric acid (PA) doped PBI membranes by direct-casting of the PPA polymerization solution without isolation or re-dissolution of the polymers. The subsequent hydrolysis of PPA to PA by moisture absorbed from the atmosphere usually induced a transition from the solution state to a gel-like state and produced PA-doped PBI membranes with a desirable suite of physiochemical properties. The polymer structure characterization included inherent viscosity (I.V.) determination as a measurement of polymer molecular weight and thermal stability assessment via thermogravimetric analysis. Physiochemical properties of the doped membrane were studied by measurements of the PA doping level, ionic conductivity and mechanical properties. The resulting pyridine-based polybenzimidazole membranes displayed high PA doping levels, ranging from 15 to 25 mol of PA per PBI repeat unit, which contributed to their unprecedented high proton conductivities of 0.1 to 0.2 S cm–1 at 160 °C. The mechanical property measurements showed that the pyridine-based PBI membranes were thermally stable and maintained mechanical integrity even at high PA doping levels. Preliminary fuel cell tests demonstrated the feasibility of the novel pyridine-based PBI (PPBI) membranes from the PPA process for operating fuel cells at temperatures in excess of 120 °C without any external humidification.

The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis

Abstract: An elementary empirical model for the distribution of electronic states of an amorphous semiconductor is presented. Using this model, we determine the functional form of the optical absorption spectrum, focusing our analysis on the joint density of states function, which dominates the absorption spectrum over the range of photon energies we consider. Applying our optical absorption results, we then determine how the empirical measures commonly used to characterize the absorption edge of an amorphous semiconductor, such as the Tauc gap and the absorption tail breadth, are related to the parameters that characterize the underlying distribution of electronic states. We, thus, provide the experimentalist with a quantitative means of interpreting the physical significance of their optical absorption data.

On coupling a lumped parameter heart model and a three-dimensional finite element aorta model.

Abstract: Aortic flow and pressure result from the interactions between the heart and arterial system. In this work, we considered these interactions by utilizing a lumped parameter heart model as an inflow boundary condition for three-dimensional finite element simulations of aortic blood flow and vessel wall dynamics. The ventricular pressure-volume behavior of the lumped parameter heart model is approximated using a time varying elastance function scaled from a normalized elastance function. When the aortic valve is open, the coupled multidomain method is used to strongly couple the lumped parameter heart model and three-dimensional arterial models and compute ventricular volume, ventricular pressure, aortic flow, and aortic pressure. The shape of the velocity profiles of the inlet boundary and the outlet boundaries that experience retrograde flow are constrained to achieve a robust algorithm. When the aortic valve is closed, the inflow boundary condition is switched to a zero velocity Dirichlet condition. With this method, we obtain physiologically realistic aortic flow and pressure waveforms. We demonstrate this method in a patient-specific model of a normal human thoracic aorta under rest and exercise conditions and an aortic coarctation model under pre- and post-interventions.

Self-heating in high-power AlGaN-GaN HFETs

Abstract: We compare self-heating effects in AlGaN-GaN heterostructure field effect transistors (HFETs) grown on sapphire and SiC substrates. Heat dissipation strongly affects the device characteristics soon after the application of the source-drain voltage (in less than 10/sup -7/ s). Our results show that in HFET's with the total epilayer thickness less than 1.5 /spl mu/m, the thermal impedance, /spl Theta/ is primarily determined by the substrate material and not by the material of the active layer. For our devices grown on 6H-SiC substrates, we measured /spl Theta/ of approximately 2/spl deg/C/spl middot/mm/W, which was more than an order of magnitude smaller than /spl Theta/=25/spl deg/C mm/W measured for similar AlGaN/GaN HFET's grown on sapphire. Our results demonstrate that AlGaN-GaN HFET's grown on SiC substrates combine advantages of superior electron transport properties in AlGaN/GaN heterostructures with excellent thermal properties of SiC, which should make these devices suitable for high-power electronic applications.