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Institution

Rensselaer Polytechnic Institute

EducationTroy, New York, United States
About: Rensselaer Polytechnic Institute is a education organization based out in Troy, New York, United States. It is known for research contribution in the topics: Terahertz radiation & Population. The organization has 19024 authors who have published 39922 publications receiving 1414699 citations. The organization is also known as: RPI & Rensselaer Institute.


Papers
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Journal ArticleDOI
TL;DR: It is shown that cNOS isoforms contain a unique polypeptide insert in their FMN binding domains which is not shared with iNOS or other related flavoproteins, and this strongly suggest that the insert is an autoinhibitory control element, docking with a site on cN OSs which impedes calmodulin binding and enzymatic activation.

246 citations

Journal ArticleDOI
TL;DR: Terahertz reflective spectroscopic focal-plane imaging of four explosive and bio-chemical materials at a standoff imaging distance of 0.4 m supports the future application of THz time-domain spectroscopy (TDS) in standoff distance sensing, imaging, and identification.
Abstract: We present terahertz (THz) reflective spectroscopic focal-plane imaging of four explosive and bio-chemical materials (2, 4-DNT, Theophylline, RDX and Glutamic Acid) at a standoff imaging distance of 0.4 m. The 2 dimension (2-D) nature of this technique enables a fast acquisition time and is very close to a camera-like operation, compared to the most commonly used point emission-detection and raster scanning configuration. The samples are identified by their absorption peaks extracted from the negative derivative of the reflection coefficient respect to the frequency (-dr/dv) of each pixel. Classification of the samples is achieved by using minimum distance classifier and neural network methods with a rate of accuracy above 80% and a false alarm rate below 8%. This result supports the future application of THz time-domain spectroscopy (TDS) in standoff distance sensing, imaging, and identification.

246 citations

Journal ArticleDOI
TL;DR: In this article, the effect of dynamic strain aging on ductility and strain hardening of commercial aluminum alloy AA5182-O was investigated at temperatures ranging from −120 to 150 ◦ C and strain rates from 10 −6 to 10 −1 s −1.
Abstract: The mechanical behavior of the commercial aluminum alloy AA5182-O is investigated at temperatures ranging from −120 to 150 ◦ C and strain rates from 10 −6 to 10 −1 s −1 . The strain rate sensitivity parameter is determined as a function of temperature and plastic strain, and the strain rate and temperature range in which dynamic strain aging leads to negative strain rate sensitivity is mapped. The effect of dynamic strain aging on ductility and strain hardening is investigated. The sensitivity of the measured quantities to the experimental method employed and their dependence on grain shape are discussed. The experimental data are compared with the predictions of a model constructed based on a recently proposed mechanism for dynamic strain ageing. The mechanism is based on the effect solute clustering at forest dislocations has on the strength of dislocation junctions. The model is shown to reproduce qualitatively the experimental trends. © 2004 Elsevier B.V. All rights reserved.

246 citations

Journal ArticleDOI
TL;DR: In this article, the authors exfoliated CrSiTe3, a bulk ferromagnetic semiconductor, to mono-and few-layer 2D crystals onto a Si/SiO2 substrate.
Abstract: Finite range ferromagnetism and antiferromagnetism in two-dimensional (2D) systems within an isotropic Heisenberg model at non-zero temperature were originally proposed to be impossible. However, recent theoretical studies using an Ising model have shown that 2D magnetic crystals can exhibit magnetism. Experimental verification of existing 2D magnetic crystals in this system has remained exploratory. In this work we exfoliated CrSiTe3, a bulk ferromagnetic semiconductor, to mono- and few-layer 2D crystals onto a Si/SiO2 substrate. Raman spectra indicate good stability and high quality of the exfoliated flakes, consistent with the computed phonon spectra of 2D CrSiTe3, giving strong evidence for the existence of 2D CrSiTe3 crystals. When the thickness of the CrSiTe3 crystals is reduced to a few layers, we observed a clear change in resistivity at 80–120 K, consistent with theoretical calculations of the Curie temperature (Tc) of ∼80 K for the magnetic ordering of 2D CrSiTe3 crystals. The ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable numerous applications in nano-spintronics.

246 citations

Journal ArticleDOI
TL;DR: The motivation, state-of-the-art, and future directions of the coordination of transmission system operators (TSO) and distribution system operator (DSO) are thoroughly discussed.
Abstract: In this paper, we review the emerging challenges and research opportunities for voltage control in smart grids. For transmission grids, the voltage control for accommodating wind and solar power, fault-induced delayed voltage recovery, and measurement-based Thevenin equivalent for voltage stability analysis are reviewed. For distribution grids, the impact of high penetration of distributed energy resources is analyzed, typical control strategies are reviewed, and the challenges for local inverter Volt–Var control is discussed. In addition, the motivation, state-of-the-art, and future directions of the coordination of transmission system operators (TSO) and distribution system operators (DSO) are also thoroughly discussed.

246 citations


Authors

Showing all 19133 results

NameH-indexPapersCitations
Pulickel M. Ajayan1761223136241
Zhenan Bao169865106571
Murray F. Brennan16192597087
Ashok Kumar1515654164086
Joseph R. Ecker14838194860
Bruce E. Logan14059177351
Shih-Fu Chang13091772346
Michael G. Rossmann12159453409
Richard P. Van Duyne11640979671
Michael Lynch11242263461
Angel Rubio11093052731
Alan Campbell10968753463
Boris I. Yakobson10744345174
O. C. Zienkiewicz10745571204
John R. Reynolds10560750027
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202334
2022177
20211,118
20201,356
20191,328
20181,245