Showing papers by "Romanian Academy published in 1989"
10 Apr 1989
TL;DR: Titanium films (120 nm) deposited on single-crystalline silicon and on poly-Si/Si02/c-Si substrates were subjected to Nd:glass laser irradiation in air as discussed by the authors.
Abstract: Titanium films (120 nm) deposited on single-crystalline silicon (c-Si) and on poly-Si/Si02/c-Si substrates were subjected to Nd:glass laser irradiation in air. Ti/Si samples were also submitted to excimer laser irradiation in a nitrogen jet. From RBS analysis it follows that in the first case titanium silicide is formed on c-Si substrate after one pulse of 1.5 J/cm2 energy density. On the poly-Si substrate a lower fluence (1 J/cm2) was sufficient. The samples submitted to excimer laser irradiation in a nitrogen jet show silicide synthesis at the Ti/Si interface and titanium nitride synthesis at the metal surface. The nitride was shown to work well as an interdiffusion barrier.
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