Russian Ministry of the Emergency Situations

About: Russian Ministry of the Emergency Situations is a government organization based out in Moscow, Russia. It is known for research contribution in the topics: Combustion & Liquid crystal. The organization has 218 authors who have published 172 publications receiving 453 citations. The organization is also known as: Ministry of the Russian Federation for Civil Defence, Emergencies and Elimination of Consequences of Natural Disasters.

Chemical bath deposition of thin nanocrystalline tin(II) sulfide films with thioacetamide

Abstract: Nanocrystalline tin(II) sulfide layers 100–650 nm thick were prepared by hydrochemical deposition on glass–ceramic supports from a citrate system at 323−343 K using thioacetamide as chalcogenizing agent. These films are of interest for the development of thin-film solar radiation converters based on the multicomponent compound Cu2ZnSnS4 of kesterite structure, prepared using a cost-saving process. Examination by scanning electron microscopy shows that tin(II) sulfide layers are formed from spherical nanocrystallites of 20–40 nm size. X-ray diffraction analysis shows that they crystallize in the orthorhombic system with the unit cell parameters a = 4.276, b = 11.243, and c = 3.986 A. Analysis by X-ray photoelectron spectroscopy revealed the presence of up to 44.86 at. % oxygen in the surface layer of the film. This oxygen is mainly present in surface contaminants and is also incorporated in SnO present on the surface.

Effects of Acyzol on Zinc Content in Rat Brain and Blood Plasma.

Abstract: Zinc level in the blood plasma and brain of rats was studied by inductively coupled plasma mass spectrometry. Maximum amount of zinc was observed in the cerebellum (15.0±5.5 μg/mg wet tissue). Single intraperitoneal administration of a zinc donor acyzol (24 mg/kg) did not change the content of this element in the tissues. Repeated injections of acyzol (7 injections over 14 days) significantly increased zinc level in rat plasma and brain. This elevation was most pronounced in the forebrain (cortex and subcortical structures). The rise in zinc concentration in blood plasma correlated with its level in the brain.

The thermal explosion of the detonating mixture is impossible without a chain avalanche

Abstract: The fundamental regularities of hydrogen/oxygen combustion are considered, which unambiguously indicate the branched chain character of the process at atmospheric pressure. It is noted that, in the general case, the ignition conditions are determined by the competition between chain termination and both chain branching and chain propagation reactions. Some publications ignoring this important point are considered.

A Temperature sensor based on a slot waveguide with a liquid crystal filling

Abstract: Methods of constructing and the operating principles of a high-speed optical sensor for highly accurate measurements of small temperature variations are considered. The sensor is based on micron-size ring resonators consisting of waveguides with one or several slots with a liquid crystal filling.

The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

Abstract: The effect of the amorphous transition layer at the interface between Mn4Si7 and silicon doped with manganese on the photoelectric properties of heterostructures is considered. It is found that the precipitated Mn atoms on the silicon surface are grouped at high temperatures, forming drops of liquid manganese, which dissolve the near-surface layer of silicon, forming a liquid solution-melt of Mn with Si. As the solution solidifies, Mn4Si7 forms, and the Si–Si bonds under the silicide break due to intense diffusion of Si atoms; an elastically deformed Si region forms, which predetermines the evolution of the formation of photoelectric phenomena in the Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M heterostructures. The microstructure and chemical composition of doped Si❬Mn❭ samples were studied by means of scanning electron microscopy and X-ray energy dispersive spectrometry using a Quanta 200-3D microscope, and the interface structure of the higher manganese silicide (HMS) and Si❬Mn❭ layer at the nanoscale was refined using the Fourier transform of local zones of high-resolution electron-microscopic images. It is concluded that in the process of diffusion doping of silicon with manganese, broken layers on the surface of the crystal deepen the embedding of manganese atoms, facilitate adsorption, dissolution, and diffusion of Mn in the volume of Si, and also enable the formation of an amorphous layer at the interface of higher manganese silicide and the Si❬Mn❭ layer. The presence of an amorphous transition layer facilitates the process of impact ionization of current carriers upon application of external voltage, as well as the formation of photoelectric phenomena: infrared quenching, temperature quenching, high photosensitivity, and long-term relaxation of residual conductivity.