Showing papers by "Samsung published in 2008"

42.2: World's Largest (15‐inch) XGA AMLCD Panel Using IGZO Oxide TFT

Abstract: The world's largest (15-inch) XGA active matrix liquid crystal display (AMLCD) panel made with IGZO TFTs (W/L=29.5/4 μm) was fabricated and evaluated with the field effective mobility of 4.2±0.4 cm2/V-s, Vth of −1.3±1.4V and sub-threshold swing (SS) of 0.96±0.10 V/dec. for a manufacturing-oriented process, the main factors affecting threshold voltage (Vth) of the IGZO thin film transistors (TFT) are investigated. On the glass surface, thicker regions of IGZO film have a negative threshold voltage shift. A dry etching process of molybdenum source and drain (S/D) causes negative shift of the average threshold voltage compared to wet etching in the bottom gate back channel etched TFTs. However, optimization of SiOx passivation and subsequent annealing shift average Vth positively and reduce Vth variation.

3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

Abstract: The full color 121-inch WXGA active-matrix organic light emitting diode (AMOLED) display was, for the first time, demonstrated using indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) as an active-matrix back plane It was found that the fabricated AMOLED display did not suffer from the well-known pixel non-uniformity of luminance, even though the simple structure consisting of 2 transistors and 1 capacitor was adopted as a unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductor The n-channel a-IGZO TFTs exhibited the field-effect mobility of 82 cm2/Vs, threshold voltage of 11 V, on/off ratio of > 108, and subthreshold gate swing of 058 V/decade The AMOLED display with a-IGZO TFT array would be promising for large size applications such as note PC and HDTV because a-IGZO semiconductor can be deposited on large glass substrate (> Gen 7) using conventional sputtering system

Thin film transistor, method of manufacturing the same, and flat panel display having the same

Abstract: A thin film transistor (TFT), a method of manufacturing the TFT, and a flat panel display comprising the TFT are provided. The TFT includes a gate, a gate insulating layer that contacts the gate, a channel layer that contacts the gate insulating layer and faces the gate with the gate insulating layer therebetween, a source that contacts an end of the channel layer; and a drain that contacts an other end of the channel layer, wherein the channel layer is an amorphous oxide semiconductor layer, and each of the source and the drain is a conductive oxide layer comprising an oxide semiconductor layer having a conductive impurity in the oxide semiconductor layer. A low resistance metal layer can further be included on the source and drain. A driving circuit of a unit pixel of a flat panel display includes the TFT.

Thin film transitor substrate and method of manufacturing the same

Abstract: A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first conductive pattern group, forming a semiconductor layer and an ohmic contact layer on the gate insulating layer by patterning an amorphous silicon layer and an oxide semiconductor layer, forming a second conductive pattern group including a source electrode and a drain electrode on the ohmic contact layer by patterning a data metal layer, forming a protection layer including a contact hole on the second conductive pattern group, and forming a pixel electrode on the contact hole of the protection layer. The TFT substrate including the ohmic contact layer formed of an oxide semiconductor is further provided.

Thin film transistor and organic light-emitting display device having the thin film transistor

Abstract: Disclosed is a thin film transistor including a P-type semiconductor layer, and an organic light-emitting display device having the thin film transistor. The present invention provides a thin film transistor including a substrate, a semiconductor layer, and a gate electrode and a source/drain electrode formed on the substrate, wherein the semiconductor layer is composed of P-type ZnO:N layers through a reaction of a mono-nitrogen gas with a zinc precursor, and the ZnO:N layer includes an un-reacted impurity element at a content of 3 at % or less.

42.4L: Late‐News Paper: 4 inch QVGA AMOLED Driven by the Threshold Voltage Controlled Amorphous GIZO (Ga2O3‐In2O3‐ZnO) TFT

Abstract: We successfully fabricated GIZO (Ga2O3-In2O3-ZnO) TFTs with high mobility of 2.6 cm2/Vs and threshold voltage standard deviation of 0.7V which is comparable to that of a-Si TFTs. Because conventional 5 mask process and bottom gate TFT structure of back channel etch type with channel length of 5 μm is used, it is expected to be transferred to mass production line in near future. Also we report the dependency of threshold voltage on the post process after the back surface of GIZO is exposed and suggest the effective method for controlling the threshold voltage of amorphous GIZO TFTs. Finally we demonstrate 4 inch QVGA AMOLED display driven by GIZO TFTs.

Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations

Abstract: Electronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enable new biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90° in ≈1 cm) and linear stretching to “rubber-band” levels of strain (e.g., up to ≈140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics.

Liquid crystal display device and method of fabricating the same

Abstract: A touch sensor equipped liquid crystal display device includes a first substrate having an image display device, a second substrate having a plurality of column spacers, a liquid crystal layer disposed between the first and second substrates. A touch sensor is driven by pressing on the second substrate. A gap maintaining region combines with the column spacers to maintain a gap between the first and second substrates, and a sensing region formed lower than the gap maintaining region achieves a sensing of the touch sensor responsive to the pressing on the second substrate.

Self-sorted, aligned nanotube networks for thin-film transistors

Abstract: To find use in electronics, single-walled carbon nanotubes need to be efficiently separated by electronic type and aligned to ensure optimal and reproducible electronic properties. We report the fabrication of single-walled carbon nanotube (SWNT) network field-effect transistors, deposited from solution, possessing controllable topology and an on/off ratio as high as 900,000. The spin-assisted alignment and density of the SWNTs are tuned by different surfaces that effectively vary the degree of interaction with surface functionalities in the device channel. This leads to a self-sorted SWNT network in which nanotube chirality separation and simultaneous control of density and alignment occur in one step during device fabrication. Micro-Raman experiments corroborate device results as a function of surface chemistry, indicating enrichment of the specific SWNT electronic type absorbed onto the modified dielectric.

Magnetism in ultrathin film structures

Abstract: In this paper, we review some of the key concepts in ultrathin film magnetism which underpin nanomagnetism. We survey the results of recent experimental and theoretical studies of well characterized epitaxial structures based on Fe, Co and Ni to illustrate how intrinsic fundamental properties such as the magnetic exchange interactions, magnetic moment and magnetic anisotropies change markedly in ultrathin films as compared with their bulk counterparts, and to emphasize the role of atomic scale structure, strain and crystallinity in determining the magnetic properties. After introducing the key length scales in magnetism, we describe the 2D magnetic phase transition and survey studies of the thickness dependent Curie temperature and the critical exponents which characterize the paramagnetic–ferromagnetic phase transition. We next discuss recent experimental and theoretical results on the determination of the exchange constant, followed by an overview of measurements of the magnetic moment in the elemental 3d transition metal thin films in the various crystal phases that have been successfully stabilized, thereby illustrating the sensitivity of the magnetic moment to the local symmetry and to the atomic environment. Finally, we discuss briefly the magnetic anisotropies of Fe, Co and Ni in the fcc crystalline phase, to emphasize the role of structure and the details of the interface in influencing the magnetic properties. The dramatic effect that adsorbates can have on the magnetic anisotropies of thin magnetic films is also discussed. Our survey demonstrates that the fundamental properties, namely, the magnetic moment and magnetic anisotropies of ultrathin films have dramatically different behaviour compared with those of the bulk while the comparable size of the structural and magnetic contributions to the total energy of ultrathin structures results in an exquisitely sensitive dependence of the magnetic properties on the film structure.

BPLRU: a buffer management scheme for improving random writes in flash storage

Abstract: Flash memory has become the most important storage media in mobile devices, and is beginning to replace hard disks in desktop systems However, its relatively poor random write performance may cause problems in the desktop environment, which has much more complicated requirements than mobile devices While a RAM buffer has been quite successful in hard disks to mask the low efficiency of random writes, managing such a buffer to fully exploit the characteristics of flash storage has still not been resolved In this paper, we propose a new write buffer management scheme called Block Padding Least Recently Used, which significantly improves the random write performance of flash storage We evaluate the scheme using trace-driven simulations and experiments with a prototype implementation It shows about 44% enhanced performance for the workload of MS Office 2003 installation

Controlling the Thickness of the Surface Oxide Layer on Cu Nanoparticles for the Fabrication of Conductive Structures by Ink‐Jet Printing

Abstract: With the aim of preparing a high performance conductive ink, we sought to control the surface chemistry of Cu nanoparticles so as to minimize surface oxidation. Specifically, the surface oxide layer on Cu nanoparticles synthesized in ambient atmosphere was minimized by adjusting the molecular weight of poly(N-vinylpyrrolidone) capping molecules, as confirmed by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy analyses. In addition, we demonstrate that by minimizing the thickness of the surface oxide layer, Cu granular films with good conductivity could be obtained by sintering nanoparticle assembles. Finally, we fabricated highly conductive Cu patterns on a plastic substrate by ink-jet printing.

Vertical-type non-volatile memory devices

Abstract: In a semiconductor device, and a method of manufacturing thereof, the device includes a substrate of single-crystal semiconductor material extending in a horizontal direction and a plurality of interlayer dielectric layers on the substrate. A plurality of gate patterns are provided, each gate pattern being between a neighboring lower interlayer dielectric layer and a neighboring upper interlayer dielectric layer. A vertical channel of single-crystal semiconductor material extends in a vertical direction through the plurality of interlayer dielectric layers and the plurality of gate patterns, a gate insulating layer being between each gate pattern and the vertical channel that insulates the gate pattern from the vertical channel.

High temperature fiber sensor with high sensitivity based on core diameter mismatch

Abstract: We report a simple fiber sensor for measurement of high temperature with high sensitivity. The sensing head is a multimode-single mode-multimode (MM-SM-MM) fiber configuration formed by splicing a section of uncoated single mode fiber (SMF) with two short sections of multimode fibers (MMF) whose core is composed of pure silica. Because of the mode-field mismatch at the splicing points of the SMF with 2 sections of MMFs, as well as index matching between the core of the MMF and the cladding of the SMF, optical power from the lead-in fiber can be partly coupled to the cladding modes of the SMF through the MMF. The cladding modes of the SMF then re-coupled to the lead-out fiber, in the same fashion. Due to the effective index difference between the core and cladding modes, an interference pattern in the transmission spectrum of the proposed device was obtained. The interference pattern was found to shift to the longer wavelength region with respect to temperature variation. The temperature sensor can measure temperature stably up to more than 900 °C with sensitivity of 0.088 nm/°C.

Highly Efficient and Thermally Stable Organic Sensitizers for Solvent‐Free Dye‐Sensitized Solar Cells

Abstract: Reference LPI-ARTICLE-2008-048doi:10.1002/anie.200703852View record in Web of Science Record created on 2008-01-16, modified on 2016-08-08

High-Speed Visible Light Communications Using Multiple-Resonant Equalization

Abstract: White light-emitting diodes (LEDs) are becoming widespread in commercial lighting applications, and there are predictions that they will be in common use in domestic applications in the future. There is also growing interest in using these devices for both illumination and communications. One of the major challenges in visible light communications is the low modulation bandwidth (BW) available from devices, which is typically several megahertz. In this letter, we describe a link that uses 16 LEDs which are modulated using a resonant driving technique, creating an overall BW of 25 MHz. This is used to implement a 40-Mb/s nonreturn-to-zero on-off keying link which operates at low error rates, and also provides illumination at levels sufficient for a standard office environment.

White light emitting device and white light source module using the same

Abstract: A white light emitting device including: a blue light emitting diode chip having a dominant wavelength of 443 to 455 nm; a red phosphor disposed around the blue light emitting diode chip, the red phosphor excited by the blue light emitting diode chip to emit red light; and a green phosphor disposed around the blue light emitting diode chip, the green phosphor excited by the blue light emitting diode chip to emit green light, wherein the red light emitted from the red phosphor has a color coordinate falling within a space defined by four coordinate points (0.5448, 0.4544), (0.7079, 0.2920), (0.6427, 0.2905) and (0.4794, 0.4633) based on the CIE 1931 chromaticity diagram, and the green light emitted from the green phosphor has a color coordinate falling within a space defined by four coordinate points (0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316) and (0.2555, 0.5030) based on the CIE 1931 color chromaticity diagram.

A case for flash memory ssd in enterprise database applications

Abstract: Due to its superiority such as low access latency, low energy consumption, light weight, and shock resistance, the success of flash memory as a storage alternative for mobile computing devices has been steadily expanded into personal computer and enterprise server markets with ever increasing capacity of its storage. However, since flash memory exhibits poor performance for small-to-moderate sized writes requested in a random order, existing database systems may not be able to take full advantage of flash memory without elaborate flash-aware data structures and algorithms. The objective of this work is to understand the applicability and potential impact that flash memory SSD (Solid State Drive) has for certain type of storage spaces of a database server where sequential writes and random reads are prevalent. We show empirically that up to more than an order of magnitude improvement can be achieved in transaction processing by replacing magnetic disk with flash memory SSD for transaction log, rollback segments, and temporary table spaces.

Apparatus for and method of controlling digital image processing apparatus

Abstract: An apparatus for and method of controlling a digital image processing device in order to reduce power consumption by automatically recognizing a state in which power of a display device can be turned off or the display device can operate in a power saving mode, and in that case, turning off the display device or operating the display device in the power saving mode. The apparatus for controlling a digital image processing device includes: a motion sensing unit sensing a motion of the digital image processing device; and a control unit operating the digital image processing device in a power saving mode when it is determined that the digital image processing device moves.

Analysis and comparison of several simple impulsive noise mitigation schemes for OFDM receivers

Abstract: In this paper, we analyze and compare the performance of OFDM receivers with blanking, clipping and combined blanking-clipping nonlinear preprocessors in the presence of impulsive noise. Closed-form analytical expressions for the signal-to-noise ratio at the output of three types of nonlinearity are derived. Simulation results are provided that show good agreement with theory.

Pulmonary Tuberculosis: Up-to-Date Imaging and Management

Abstract: OBJECTIVE. Pulmonary tuberculosis (TB) is a common worldwide infection and a medical and social problem causing high mortality and morbidity, especially in developing countries. The traditional imaging concept of primary and reactivation TB has been recently challenged, and radiologic features depend on the level of host immunity rather than the elapsed time after the infection. We aimed to elaborate the new concept of the diagnosis and treatment of pulmonary TB, to review the characteristic imaging findings of various forms of pulmonary TB, and to assess the role of CT in the diagnosis and management of pulmonary TB.CONCLUSION. Fast and more accurate TB testing such as bacterial DNA fingerprinting and whole-blood interferon-γ assay has been developed. Miliary or disseminated primary pattern or atypical manifestations of pulmonary TB are common in patients with impaired immunity. CT plays an important role in the detection of TB in patients in whom the chest radiograph is normal or inconclusive, in the de...

Lung Function Changes in Sprague-Dawley Rats After Prolonged Inhalation Exposure to Silver Nanoparticles

Abstract: The antimicrobial activity of silver nanoparticles has resulted in their widespread use in many consumer products. However, despite the continuing increase in the population exposed to silver nanoparticles, the effects of prolonged exposure to silver nanoparticles have not been thoroughly determined. Accordingly, this study attempted to investigate the inflammatory responses and pulmonary function changes in rats during 90 days of inhalation exposure to silver nanoparticles. The rats were exposed to silver nanoparticles (18 nm diameter) at concentrations of 0.7 x 10(6) particles/cm(3) (low dose), 1.4 x 10(6) particles /cm(3) (middle dose), and 2.9 x 10(6) particles /cm(3) (high dose) for 6 h/day in an inhalation chamber for 90 days. The lung function was measured every week after the daily exposure, and the animals sacrificed after the 90-day exposure period. Cellular differential counts and inflammatory measurements, such as albumin, lactate dehydrogenase (LDH), and total protein, were also monitored in the acellular bronchoalveolar lavage (BAL) fluid of the rats exposed to the silver nanoparticles for 90 days. Among the lung function test measurements, the tidal volume and minute volume showed a statistically significant decrease during the 90 days of silver nanoparticle exposure. Although no statistically significant differences were found in the cellular differential counts, the inflammation measurements increased in the high-dose female rats. Meanwhile, histopathological examinations indicated dose-dependent increases in lesions related to silver nanoparticle exposure, such as infiltrate mixed cell and chronic alveolar inflammation, including thickened alveolar walls and small granulomatous lesions. Therefore, when taken together, the decreases in the tidal volume and minute volume and other inflammatory responses after prolonged exposure to silver nanoparticles would seem to indicate that nanosized particle inhalation exposure can induce lung function changes, along with inflammation, at much lower mass dose concentrations when compared to submicrometer particles.

Nitride semiconductor light emitting device and fabrication method thereof

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Random Circuit Breaker Network Model for Unipolar Resistance Switching

Abstract: The existence of reversible resistance switching (RS) behaviors induced by electric stimulus has been known for some time, and these intriguing physical phenomena have been observed in numerous materials, including oxides. As conventional charge-based random access memory is expected to face a size limit in the near future, a surge of renewed interest has been developed in RS phenomena for possible applications in small nonvolatile memory devices called resistance random access memory (RRAM). Of particular interest is unipolar RS, which shows the RS at two values of applied voltage of the same polarity. The unipolar RS exhibits a much larger resistance change than other RS phenomena, and this greatly simplifies the process of reading the memory state. When fabricated with oxide p-n diodes, memory cells using unipolar RS can be stacked vertically, which has the potential for dramatically increasing memory density. Therefore, unipolar RRAM may be a good candidate for multi-stacked, high density, nonvolatile memory. The most important scientific and technical issues concerning unipolar RS are how it works and the identification of its controlling parameters. Some studies have reported that unipolar RS comes from a homogeneous/inhomogeneous transition of current distribution, while others maintain that it comes from the formation and rupture of conducting filaments. Even with recent extensive studies on unipolar RS, its basic origin is still far from being understood. In addition, no model exists that actually explains how the reversible switching can occur at two values of applied voltage. This lack of a quantitative model poses a major barrier for unipolar RRAM applications. In this study, we describe RS behavior in polycrystalline TiO2 film. To explain the basic mechanism of unipolar RS behavior, we propose a new percolation model based on a network of ‘‘circuit breakers’’ with two switchable metastable states. The random circuit breaker (RCB) network model can explain the long-standing material issue of how unipolar RS occurs. This simple percolation model is different from the conventional percolation models, which have dealt only with static or irreversible dynamic processes. In addition, the RCB network model provides an indication of how to overcome the substantial distribution of switching voltages, which is currently considered the most serious obstacle to practical unipolar RRAM applications. The unipolar RS phenomenon can be explained by the current (I)-voltage (V) curves in Figure 1a, which are derived from measurements of our polycrystalline TiO2 thin capacitors. At the pristine state (green dot), they are in an insulating state. As the external voltage Vext increases from zero and reaches a threshold voltage Vforming, a sudden increase occurs in the current. If the current is not limited to a certain value, here called the compliance current Icomp, the TiO2 capacitor would experience a dielectric breakdown and be destroyed. However, [*] Prof. T. W. Noh, S. C. Chae, S. B. Lee, S. H Chang, Dr. C. Liu ReCOE & FPRD, Department of Physics and Astronomy Seoul National University Seoul 151-747 (Korea) E-mail: twnoh@snu.ac.kr

Monitoring Multiwalled Carbon Nanotube Exposure in Carbon Nanotube Research Facility

Abstract: With the increased production and widespread use of multiwalled carbon nanotubes (MWCNTs), human and environmental exposure to MWCNTs is inevitably increasing. Therefore, this study monitored the possible exposure to MWCNT release in a carbon nanotube research laboratory. To estimate the potential exposure of researchers and evaluate the improvement of the workplace environment after the implementation of protective control measures, personal and area monitoring were conducted in an MWCNT research facility where the researchers handled unrefined materials. The number, composition, and aspect ratio of MWCNTs were measured using scanning transmission electron microscopy with an energy-dispersive x-ray analyzer. The gravimetric concentrations of total dust before any control measures ranged from 0.21 to 0.43 mg/m(3), then decreased to a nondetectable level after implementing the control measures. The number of MWCNTs in the samples obtained from the MWCNT blending laboratory ranged from 172.9 to 193.6 MWCNTs/cc before the control measures, and decreased to 0.018-0.05 MWCNTs/cc after the protective improvements. The real-time monitoring of aerosol particles provided a signature of the MWCNTs released from the blending equipment in laboratory C. In particular, the number size response of an aerodynamic particle sizer with a relatively high concentration in the range of 2 to 3 microm in aerodynamic diameter revealed the evidence of MWCNT exposure. The black carbon mass concentration also increased significantly during the MWCNT release process. Therefore, the present study suggests that the conventional industrial hygiene measures can significantly reduce exposure to airborne MWCNTs and other particulate materials in a nano research facility.

Detecting unauthorized use of computing devices based on behavioral patterns

Abstract: Techniques for detecting unauthorized use (e.g., malicious attacks) of the computing systems (e.g., computing devices) are disclosed. Unauthorized use can be detected based on patterns of use (e.g., behavioral patterns of use typically associated with a human being) of the computing systems. Acceptable behavioral pattern data can be generated for a computing system by monitoring the use of a support system (e.g., an operating system, a virtual environment) operating on the computing system. For example, a plurality of system support provider components of a support system (e.g., system calls, device drivers) can be monitored in order to generate the acceptable behavioral pattern data in a form which effectively defines an acceptable pattern of use (usage pattern) for the monitored system support provider components, thereby allowing detection of unauthorized use of a computing system by detecting any deviation from the acceptable pattern of use of the monitored system support provider components.

Speech interface system and method for control and interaction with applications on a computing system

Abstract: A speech processing system which exploits statistical modeling and formal logic to receive and process speech input, which may represent data to be received, such as dictation, or commands to be processed by an operating system, application or process. A command dictionary and dynamic grammars are used in processing speech input to identify, disambiguate and extract commands. The logical processing scheme ensures that putative commands are complete and unambiguous before processing. Context sensitivity may be employed to differentiate data and commands. A multi faceted graphic user interface may be provided for interaction with a user to speech enable interaction with applications and processes that do not necessarily have native support for speech input.

Behavioral detection of malware on mobile handsets

Abstract: A novel behavioral detection framework is proposed to detect mobile worms, viruses and Trojans, instead of the signature-based solutions currently available for use in mobile devices. First, we propose an efficient representation of malware behaviors based on a key observation that the logical ordering of an application's actions over time often reveals the malicious intent even when each action alone may appear harmless. Then, we generate a database of malicious behavior signatures by studying more than 25 distinct families of mobile viruses and worms targeting the Symbian OS - the most widely-deployed handset OS - and their variants. Next, we propose a two-stage mapping technique that constructs these signatures at run-time from the monitored system events and API calls in Symbian OS. We discriminate the malicious behavior of malware from the normal behavior of applications by training a classifier based on Support Vector Machines (SVMs). Our evaluation on both simulated and real-world malware samples indicates that behavioral detection can identify current mobile viruses and worms with more than 96% accuracy. We also find that the time and resource overheads of constructing the behavior signatures from low-level API calls are acceptably low for their deployment in mobile devices.