Showing papers by "Samsung published in 2011"

An introduction to millimeter-wave mobile broadband systems

Abstract: Almost all mobile communication systems today use spectrum in the range of 300 MHz-3 GHz. In this article, we reason why the wireless community should start looking at the 3-300 GHz spectrum for mobile broadband applications. We discuss propagation and device technology challenges associated with this band as well as its unique advantages for mobile communication. We introduce a millimeter-wave mobile broadband (MMB) system as a candidate next generation mobile communication system. We demonstrate the feasibility for MMB to achieve gigabit-per-second data rates at a distance up to 1 km in an urban mobile environment. A few key concepts in MMB network architecture such as the MMB base station grid, MMB interBS backhaul link, and a hybrid MMB + 4G system are described. We also discuss beamforming techniques and the frame structure of the MMB air interface.

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Abstract: Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaO(x)-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 10(12). Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

On the levy-walk nature of human mobility

Abstract: We report that human walk patterns contain statistically similar features observed in Levy walks. These features include heavy-tail flight and pause-time distributions and the super-diffusive nature of mobility. Human walks are not random walks, but it is surprising that the patterns of human walks and Levy walks contain some statistical similarity. Our study is based on 226 daily GPS traces collected from 101 volunteers in five different outdoor sites. The heavy-tail flight distribution of human mobility induces the super-diffusivity of travel, but up to 30 min to 1 h due to the boundary effect of people's daily movement, which is caused by the tendency of people to move within a predefined (also confined) area of daily activities. These tendencies are not captured in common mobility models such as random way point (RWP). To evaluate the impact of these tendencies on the performance of mobile networks, we construct a simple truncated Levy walk mobility (TLW) model that emulates the statistical features observed in our analysis and under which we measure the performance of routing protocols in delay-tolerant networks (DTNs) and mobile ad hoc networks (MANETs). The results indicate the following. Higher diffusivity induces shorter intercontact times in DTN and shorter path durations with higher success probability in MANET. The diffusivity of TLW is in between those of RWP and Brownian motion (BM). Therefore, the routing performance under RWP as commonly used in mobile network studies and tends to be overestimated for DTNs and underestimated for MANETs compared to the performance under TLW.

Full-colour quantum dot displays fabricated by transfer printing

Abstract: Scientists describe a size-selective quantum dot patterning technique that involves kinetically controlling the nanotransfer process without a solvent. The resulting printed quantum dot films exhibit excellent morphology and a well-ordered quantum dot structure. This technique allows fabrication of a 4-inch (or larger) thin-film transistor display with high colour purity and extremely high resolution.

Tuning charge transport in solution-sheared organic semiconductors using lattice strain

Abstract: A solution-processing method known as solution shearing is used to introduce lattice strain to organic semiconductors, thus improving charge carrier mobility. Solution-processed organic semiconductors show great promise for application in cheap and flexible electronic devices, but generally suffer from greatly reduced electronic performance — most notably charge-carrier mobilities — compared with their inorganic counterparts. Borrowing a trick from the inorganic semiconductor community, Giri et al. show how the introduction of strain into an organic semiconductor, through a simple solution-processing technique, modifies the molecular packing within the material and hence its electronic performance. For one material studied, the preparation of a strained structure is shown to more than double the charge-carrier mobility. Circuits based on organic semiconductors are being actively explored for flexible, transparent and low-cost electronic applications1,2,3,4,5. But to realize such applications, the charge carrier mobilities of solution-processed organic semiconductors must be improved. For inorganic semiconductors, a general method of increasing charge carrier mobility is to introduce strain within the crystal lattice6. Here we describe a solution-processing technique for organic semiconductors in which lattice strain is used to increase charge carrier mobilities by introducing greater electron orbital overlap between the component molecules. For organic semiconductors, the spacing between cofacially stacked, conjugated backbones (the π–π stacking distance) greatly influences electron orbital overlap and therefore mobility7. Using our method to incrementally introduce lattice strain, we alter the π–π stacking distance of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) from 3.33 A to 3.08 A. We believe that 3.08 A is the shortest π–π stacking distance that has been achieved in an organic semiconductor crystal lattice (although a π–π distance of 3.04 A has been achieved through intramolecular bonding8,9,10). The positive charge carrier (hole) mobility in TIPS-pentacene transistors increased from 0.8 cm2 V−1 s−1 for unstrained films to a high mobility of 4.6 cm2 V−1 s−1 for a strained film. Using solution processing to modify molecular packing through lattice strain should aid the development of high-performance, low-cost organic semiconducting devices.

Fiber Supercapacitors Made of Nanowire‐Fiber Hybrid Structures for Wearable/Flexible Energy Storage

Abstract: many existing energy-harvesting and storage devices are stilltoo bulky and heavy for intended applications. For example,high-efficiency dye-sensitized solar cells (DSSCs) employfluorine-doped tin oxide (FTO) glass as the substrate ofworking electrode. However, the use of rigid FTO glass hasrestricted adaptability of DSSCs during transportation,installation, and application,

Touch screen panel

Abstract: Disclosed is a touch screen panel including a plurality of separate sensing electrodes, and a plurality of separate driving electrodes. Each of the sensing electrodes includes a main electrode and a plurality of expanded parts. Each of the expanded parts includes a sub-electrode extending from the main electrode and at least one expanded electrode extending from the sub-electrode. Each of the driving electrodes surrounds at least part of a corresponding one of the expanded parts.

A role for graphene in silicon-based semiconductor devices

Abstract: As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.

On building an accurate stereo matching system on graphics hardware

Abstract: This paper presents a GPU-based stereo matching system with good performance in both accuracy and speed. The matching cost volume is initialized with an AD-Census measure, aggregated in dynamic cross-based regions, and updated in a scanline optimization framework to produce the disparity results. Various errors in the disparity results are effectively handled in a multi-step refinement process. Each stage of the system is designed with parallelism considerations such that the computations can be accelerated with CUDA implementations. Experimental results demonstrate the accuracy and the efficiency of the system: currently it is the top performer in the Middlebury benchmark, and the results are achieved on GPU within 0.1 seconds. We also provide extra examples on stereo video sequences and discuss the limitations of the system.

Prospective materials and applications for Li secondary batteries

Abstract: Li-ion batteries have been employed successfully in various small electronic devices for the last two decades, and the types of applications are currently expanding to include electric vehicles (EVs), power tools, and large electric power storage units. In order to be implemented in these emerging markets, novel materials for negative and positive electrodes as well as electrolytes need to be developed to achieve high energy density, high power, and safe lithium rechargeable batteries. Here, the trends of the market and development of materials for each application are introduced, and some of next generation Li-ion batteries are discussed.

Capacity Enhancement Using an Interference Limited Area for Device-to-Device Uplink Underlaying Cellular Networks

Abstract: A new interference management strategy is proposed to enhance the overall capacity of cellular networks (CNs) and device-to-device (D2D) systems. We consider M out of K cellular user equipments (CUEs) and one D2D pair exploiting the same resources in the uplink (UL) period under the assumption of M multiple antennas at the base station (BS). First, we use the conventional mechanism which limits the maximum transmit power of the D2D transmitter so as not to generate harmful interference from D2D systems to CNs. Second, we propose a δD-interference limited area (ILA) control scheme to manage interference from CNs to D2D systems. The method does not allow the coexistence (i.e., use of the same resources) of CUEs and a D2D pair if the CUEs are located in the δD-ILA defined as the area in which the interference to signal ratio (ISR) at the D2D receiver is greater than the predetermined threshold, δD. Next, we analyze the coverage of the δD-ILA and derive the lower bound of the ergodic capacity as a closed form. Numerical results show that the δD-ILA based D2D gain is much greater than the conventional D2D gain, whereas the capacity loss to the CNs caused by using the δD-ILA is negligibly small.

Nonvolatile memory device, operating method thereof and memory system including the same

Abstract: A method of operating a non-volatile memory device includes performing an erasing operation to memory cells associated with a plurality of string selection lines (SSLs), the memory cells associated with the plurality of SSLs constituting a memory block, and verifying the erasing operation to second memory cells associated with a second SSL after verifying the erasing operation to first memory cells associated with a first SSL.

A Real Maximum Power Point Tracking Method for Mismatching Compensation in PV Array Under Partially Shaded Conditions

Abstract: Conventional popular maximum power point tracking (MPPT) methods are effective under uniform solar irradiance. However, under solar irradiance mismatching conditions [partially shaded conditions (PSCs)], these MPPTs can fail for real MPPT (RMPPT), because multiple local maxima can be exhibited on the power-voltage characteristic curve. Although some researchers have worked on RMPPT under partial shading conditions, the methods have some drawbacks in terms of complexity and requirements for additional circuits, etc. In this paper, a novel MPPT method capable of RMPPT under PSCs is proposed. The performance of the proposed MPPT method is analyzed according to the RMPP position and is verified by simulation and experimental results.

Loss-of-function mutations in Notch receptors in cutaneous and lung squamous cell carcinoma.

Abstract: Squamous cell carcinomas (SCCs) are one of the most frequent forms of human malignancy, but, other than TP53 mutations, few causative somatic aberrations have been identified. We identified NOTCH1 or NOTCH2 mutations in ~75% of cutaneous SCCs and in a lesser fraction of lung SCCs, defining a spectrum for the most prevalent tumor suppressor specific to these epithelial malignancies. Notch receptors normally transduce signals in response to ligands on neighboring cells, regulating metazoan lineage selection and developmental patterning. Our findings therefore illustrate a central role for disruption of microenvironmental communication in cancer progression. NOTCH aberrations include frameshift and nonsense mutations leading to receptor truncations as well as point substitutions in key functional domains that abrogate signaling in cell-based assays. Oncogenic gain-of-function mutations in NOTCH1 commonly occur in human T-cell lymphoblastic leukemia/lymphoma and B-cell chronic lymphocytic leukemia. The bifunctional role of Notch in human cancer thus emphasizes the context dependency of signaling outcomes and suggests that targeted inhibition of the Notch pathway may induce squamous epithelial malignancies.

High-Bandwidth Sensorless Algorithm for AC Machines Based on Square-Wave-Type Voltage Injection

Abstract: This paper describes a new control algorithm which can enhance the dynamics of a sensorless control system and gives a precise sensorless control performance. Instead of the conventional sinusoidal-type voltage injection, a square-wave-type voltage injection incorporated with the associated signal processing method is proposed in this paper. As a result, the error signal can be calculated without low-pass filters and time delays, and the position estimation performance can be enhanced. Using the proposed method, the performance of the sensorless control can be enhanced; the bandwidth of the current controller was enhanced up to 250 Hz, and that of the speed controller was up to 50 Hz.

Non-volatile memory device, erasing method thereof, and memory system including the same

Abstract: Provided is an erasing method of a nonvolatile memory device. The erasing method applies a word line erase voltage to a plurality of word lines connected to the memory cells respectively, applies a specific voltage to a ground selection line connected to the ground selection transistor, applies an erase voltage to a substrate in which the memory string formed during the step applying the specific voltage to the ground selection line, and floats the ground selection line in response to a voltage change of the substrate.

Nonvolatile Memory Devices, Channel Boosting Methods Thereof, Programming Methods Thereof, And Memory Systems Including The Same

Abstract: Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.

Selective dispersion of high purity semiconducting single-walled carbon nanotubes with regioregular poly(3-alkylthiophene)s

Abstract: Metallic and semiconducting carbon nanotubes generally coexist in 'as-grown' materials. In this study, single-walled nanotubes are sorted using regioregular poly(3-alkylthiophene)s; rational selection of polymers, solvent and temperature allows the selective dispersion of semiconducting carbon nanotubes.

Low-Power Flexible Organic Light-Emitting Diode Display Device

Abstract: Demands in extending fl at panel approaches to attain ultra-thin fl exible displays, which are lightweight, portable, and unbreakable for head-up displays, security identifi cation documents, conformable products, and electronic papers are ever increasing. [ 1‐3 ] A typical fl exible display comprises two major parts: i) driving circuitry to switch and address the display device, and ii) a fl exible display device to display an image and enhance outdoor readability. Signifi cant progress has been made in achieving stable rollable or bendable driving circuitry based on flthin fi lm transistors (TFTs), such as oxide transistors based on gallium indium zinc oxide (GIZO) [ 4 ] or hafnium indium zinc oxide (HIZO), [ 5 ] low temperature poly-Si (LTPS) on a plastic substrate (polyimide), [ 6 ] nanotube and nanowire-based transistors, [ 2 , 7 , 8 ] and organic thin fi lm transistors (OTFTs). [ 9 ] On the other hand, challenges to integrate a fl exible display device to realize full-color, low power, and outdoor readability have still not been addressed. Liquid crystal displays (LCDs) are widely used to fabricate commercial displays, but their optical system to switch a light source (backlight unit or light-emitting diode (LED) through a red/ green/blue (RGB) color fi lter) consists of a constant thick layer of liquid crystal molecules aligned between electrodes, and two polarization fi lms having the axes of transmission perpendicular to each other. Bending a LCD causes liquid crystal molecules to deform. The light that passes through the deformed liquid crystal molecules and two surrounding polarizing fi lms with perpendicular polarization axes is distorted causing display malfunction. In comparison, OLEDs do not suffer from such bending malfunctions, which makes OLEDs strong candidates for integration with fl exible electronics to achieve fl exible color displays. Current-generation OLEDs can afford a high performance and fl exibility, but this technology requires a polarization (POL) fi lm to enhance the contrast ratio for outdoor readability, and glass encapsulation to protect the OLED from oxygen and water. The fragile nature of these components limits their utility in fl exible OLED display devices. An advanced material to overcome the fragile components is required to allow the fl exible properties. In order to achieve a highly fl exible OLED display device, the following characteristics are needed: i) a low temperature process to prevent deformation in plastic substrates, ii) a new optical architecture providing both fl exibility and high outdoor readability, iii) a thinner and lighter platform than for current OLED technologies that allows bending and folding, iv) mechanical and electrical stability during repetitive folding, and v) optical reliability without malfunction from an ambient environment, especially water and oxygen.

Liquid crystal display device and method of manufacturing the same

Abstract: A liquid crystal display device and a method of manufacturing the same. The liquid crystal display device includes a plurality of pixel cells on a substrate and a common voltage line. The common voltage line provides a common voltage to the pixel cells, and includes first to third s interconnection patterns which are sequentially stacked over the substrate. Each of the pixel cells includes a storage capacitor which includes a lower electrode, and an upper electrode over the lower electrode. The second interconnection pattern includes the same material as a material of the upper electrode, and is formed in the same process as a process of the upper electrode.

Porous PVDF as effective sonic wave driven nanogenerators.

Abstract: Piezomaterials are known to display enhanced energy conversion efficiency at nanoscale due to geometrical effect and improved mechanical properties. Although piezoelectric nanowires have been the most widely and dominantly researched structure for this application, there only exist a limited number of piezomaterials that can be easily manufactured into nanowires, thus, developing effective and reliable means of preparing nanostructures from a wide variety of piezomaterials is essential for the advancement of self-powered nanotechnology. In this study, we present nanoporous arrays of polyvinylidene fluoride (PVDF), fabricated by a lithography-free, template-assisted preparation method, as an effective alternative to nanowires for robust piezoelectric nanogenerators. We further demonstrate that our porous PVDF nanogenerators produce the rectified power density of 0.17 mW/cm3 with the piezoelectric potential and the piezoelectric current enhanced to be 5.2 times and 6 times those from bulk PVDF film nanogenerators under the same sonic-input.

Visible‐Color‐Tunable Light‐Emitting Diodes

Abstract: However, conventional inorganic thin-fi lm light-emitting diodes (LEDs) emit only a single color that is determined by the quantum well layer thickness and composition. Achieving multiple color generation from inorganic LEDs on a substrate is a major obstacle to using inorganic semiconductors in fullcolor displays. To overcome this obstacle, we used multifacetted gallium nitride (GaN) nanorod arrays with In x Ga 1 − x N/GaN multiple quantum wells (MQWs) anisotropically formed on the nanorod tips and sidewalls. For various electroluminescence (EL) colors, current injection paths were controlled through a continuous p-GaN layer depending on the applied bias voltage. Here, we report on the fabrication and characteristics of monolithic, full-color, tunable LEDs, whose EL color can be tuned continuously from red to blue by adjusting the external electric bias. The basic strategy for epitaxial growth of multifacetted GaN nanostructures and fabrication of color-tunable LEDs is shown in Figure 1 a. To obtain the LED structure, the GaN nanorod arrays were grown on n + -GaN/Al 2 O 3 (0001) substrates with a submicrometer-hole-patterned SiO 2 growth-mask layer using catalyst-free, selective metal–organic vapor-phase epitaxy (MOVPE). As shown in the scanning electron microscopy (SEM) image in Figure 1 b, a vertically aligned GaN nanorod array exhibited excellent uniformity, with a mean length, dia meter, and neighbor spacing of 520, 220, and 550 nm, respectively, all of which could be controlled by changing the lithographic

Towards an Elastic Application Model for Augmenting the Computing Capabilities of Mobile Devices with Cloud Computing

Abstract: We propose a new elastic application model that enables seamless and transparent use of cloud resources to augment the capability of resource-constrained mobile devices. The salient features of this model include the partition of a single application into multiple components called weblets, and a dynamic adaptation of weblet execution configuration. While a weblet can be platform independent (e.g., Java or .Net bytecode or Python script) or platform dependent (native code), its execution location is transparent--it can be run on a mobile device or migrated to the cloud, i.e., run on one or more nodes offered by an IaaS provider. Thus, an elastic application can augment the capabilities of a mobile device including computation power, storage, and network bandwidth, with the light of dynamic execution configuration according to device's status including CPU load, memory, battery level, network connection quality, and user preferences. This paper presents the motivation behind developing elastic applications and their architecture including typical elasticity patterns and cost models that are applied to determine the elasticity patterns. We implement a reference architecture and develop a set of elastic applications to validate the augmentation capabilities for smartphone devices. We demonstrate promising results of the proposed application model using data collected from one of our example elastic applications.

Organic Light Emitting Display Device

Abstract: The present invention provides OLEDs of the top emission type comprising organic light-emitting (LE) elements by preventing the problems such as the widening of the power lines, the reduction in the aperture ratio caused by the widening of the upper and the lower capacitor electrodes and the short circuit between the upper and the lower electrodes caused by the roughness of the flattening layers. Two kinds of the OLEDs are provided. One is an OLED comprising a region of LE layer sandwiched between the upper and lower electrodes is formed on a power line of TFT for driving the pixel. Another comprises a region of the LE layer formed on an electrode of capacitor connected to the TFTs to control the light-emitting element. Accordingly, without forming a flattening layer on the light-emitting layer, there is no electric short circuit between the lower electrode and the upper electrode.

Organic Light Emitting Diode Display and Manufacturing Method Thereof

Abstract: An organic light emitting diode display includes a substrate. A control electrode is on the substrate. A gate insulating film covers the control electrode. An input electrode and an output electrode are on the gate insulating film and face each other. An oxide semiconductor is between the input electrode and the output electrode and on the control electrode. A pixel electrode is on portions of the edges of the output electrode and is electrically connected. An organic light emitting member is on the pixel electrode. A common electrode is on the organic light emitting member. The oxide semiconductor and the pixel electrode may be of the same layer.

Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device

Abstract: A light-emitting element capable of increasing the amount of light emitted, a light-emitting device including the same, and a method of manufacturing the light-emitting element and the light-emitting device include a buffer layer having an uneven pattern formed thereon; a light-emitting structure including a first conductive pattern of a first conductivity type that is conformally formed along the buffer layer having the uneven pattern formed thereon, a light-emitting pattern that is conformally formed along the first conductive pattern, and a second conductive pattern of a second conductivity type that is formed on the light-emitting pattern; a first electrode electrically connected to the first conductive pattern; and a second electrode electrically connected to the second conductive pattern.

Integrating Suppliers into Green Product Innovation Development: an Empirical Case Study in the Semiconductor Industry

Abstract: Green innovation has been recognized as one of the key factors to achieve environmental and economic success in markets. Understanding green product innovation development as a result of suppliers' involvement has become a strategic priority for academics and practitioners. This paper aims to explore and understand the role of suppliers in enhancing the manufacturer's ability to successfully carry out green innovation in product development. As a research methodology, a case study approach is employed. Primary data were collected through site visits and extensive interviews with corporate and plant management in Korea. Based on the Korean study, the paper presents following outcomes. First, there is a strong linkage between environmental compliance and green new product developments. Second, there is a strategically close relationship of environmental collaboration between suppliers and the buying company through technological integration. Finally, involving key suppliers in green new product development for environmentally demanding customers and markets can bring both environmental and commercial success. This research provides new insights on supplier involvement and green product innovation development in supply chain management. Copyright © 2011 John Wiley & Sons, Ltd and ERP Environment.

Single-fiber-based hybridization of energy converters and storage units using graphene as electrodes

Abstract: Recently, there has been great interest in wearable and stretchable energy generation and storage devices utilizing nanotechnology for applications such as self-powering nanosystem that harvests its operating energy from the environment. [ 1 ] Solar, mechanical and thermal energy can be scavenged from the environment using devices that were fabricated using fl exible or stretchable substrates. For example, textile-fi bre-based nanogenerators have been demonstrated utilizing ZnO nanowires (NWs) grown on Kevlar fi bres to scavenge low-frequency mechanical energy. [ 2 ] Twisted fi bre-like electrodes have been used for harvesting solar energy using the dye-sensitized solar cells (DSSCs) approach. [ 3 ] Once the energy is harvested from the environment, an energy storage device is required in order to maintain the operation of the system, but it is usually a separated unit from the energy converters. Flexible batteries. [ 4 ]

Temporal Dissection of Tumorigenesis in Primary Cancers

Abstract: Timely intervention for cancer requires knowledge of its earliest genetic aberrations. Sequencing of tumors and their metastases reveals numerous abnormalities occurring late in progression. A means to temporally order aberrations in a single cancer, rather than inferring them from serially acquired samples, would define changes preceding even clinically evident disease. We integrate DNA sequence and copy number information to reconstruct the order of abnormalities as individual tumors evolve for 2 separate cancer types. We detect vast, unreported expansion of simple mutations sharply demarcated by recombinative loss of the second copy of TP53 in cutaneous squamous cell carcinomas (cSCC) and serous ovarian adenocarcinomas, in the former surpassing 50 mutations per megabase. In cSCCs, we also report diverse secondary mutations in known and novel oncogenic pathways, illustrating how such expanded mutagenesis directly promotes malignant progression. These results reframe paradigms in which TP53 mutation is required later, to bypass senescence induced by driver oncogenes.