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Institution

Samsung

CompanySeoul, South Korea
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.


Papers
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Patent
Dae-ho Choo1, Byeong-ill Kim1, Sung-Uk Jung1, Woo-shik Lee1, Bum-soo Kim1 
28 May 2003
TL;DR: In this article, the authors present a laser cutter for cutting an object being cut such as a two glasses-attached panel for LCD using a laser beam, which includes a laser unit for irradiating the laser beam with a specific wavelength along a marked cutting line of the object, a pre-scriber for forming a precut groove at the starting edge of the marked line, and a cooling unit for cooling the cutting line which said laser beam has been irradiated.
Abstract: The present invention disclose a laser cutter for cutting an object being cut such as a two glasses-attached panel for LCD using a laser beam. The laser cutter includes a laser unit for irradiating a laser beam with a specific wavelength along a marked cutting line of the object, a pre-scriber for forming a pre-cut groove at starting edge of the marked cutting line, and a cooling unit for cooling the cutting line which said laser beam has been irradiated.

239 citations

Patent
Kim Sang-Ho1
05 Feb 2009
TL;DR: A semiconductor device includes a first insulation film having a plurality of openings which exposes predetermined regions of a semiconductor substrate, and then the second conductive patterns are disposed on the first conductive pattern within the openings and separated from inner walls of the openings.
Abstract: A semiconductor device includes a first insulation film having a plurality of openings which exposes predetermined regions of a semiconductor substrate, a plurality of first conductive patterns partially filling the openings and a plurality of second conductive patterns disposed on the first conductive patterns within the openings and separated from inner walls of the openings.

239 citations

Patent
Pranav Mistry1, Sajid Sadi1, Lining Yao1, John Snavely1, Eva-Maria Offenberg1, Link Huang1, Cathy Kim1 
20 Nov 2013
TL;DR: In this article, a transition from a first screen to a second screen of a graphical user interface is described, and visual transition effects are applied to the transition between the two screens.
Abstract: In one embodiment, an apparatus includes one or more processors and a memory coupled to the processors that includes instructions executable by the processors. When executing the instructions, the processors present on a display of the apparatus a first screen of a graphical user interface. The first screen includes one or more first elements. The processors receive user input indicating a transition in the graphical user interface and, in response to the user input, transition from the first screen to a second screen of the graphical user interface and apply one or more visual transition effects to the transition. The second screen includes one or more second elements.

239 citations

Patent
29 Aug 2005
TL;DR: In this paper, a light emitting diode includes a lens, a chip base attached to a bottom of the lens, and an LED chip attached in the chip base to be concentric with the lens.
Abstract: A light emitting diode includes a lens, a chip base attached to a bottom of the lens, and an LED chip attached in the chip base to be concentric with the lens. The lens includes a bottom, an outer sidewall extending from the bottom, a first outer top surface extending from the outer sidewall, a second outer top surface extending from the first outer top surface and having a substantially conical groove-like shape, an inner sidewall forming a side of a central cavity formed by hollowing a central portion of the bottom, and an inner top surface extending from the inner sidewall and forming a ceiling of the central cavity. The substantially conical groove-like shaped second outer top surface has an angular point formed toward the central cavity, and the inner top surface is convexly formed toward the bottom.

238 citations

Journal ArticleDOI
TL;DR: A vertical Memristor that sandwiches two MoS2 monolayers between an active Cu top electrode and an inert Au bottom electrode achieves consistent bipolar and analogue switching, and thus exhibits the synapse-like learning behavior such as the spike-timing dependent plasticity (STDP), the very first STDP demonstration among all 2D-material-based vertical memristors.
Abstract: Atomically thin two-dimensional (2D) materials-such as transition metal dichalcogenide (TMD) monolayers and hexagonal boron nitride (hBN)-and their van der Waals layered preparations have been actively researched to build electronic devices such as field-effect transistors, junction diodes, tunneling devices, and, more recently, memristors. Two-dimensional material memristors built in lateral form, with horizontal placement of electrodes and the 2D material layers, have provided an intriguing window into the motions of ions along the atomically thin layers. On the other hand, 2D material memristors built in vertical form with top and bottom electrodes sandwiching 2D material layers may provide opportunities to explore the extreme of the memristive performance with the atomic-scale interelectrode distance. In particular, they may help push the switching voltages to a lower limit, which is an important pursuit in memristor research in general, given their roles in neuromorphic computing. In fact, recently Akinwande et al. performed a pioneering work to demonstrate a vertical memristor that sandwiches a single MoS2 monolayer between two inert Au electrodes, but it could neither attain switching voltages below 1 V nor control the switching polarity, obtaining both unipolar and bipolar switching devices. Here, we report a vertical memristor that sandwiches two MoS2 monolayers between an active Cu top electrode and an inert Au bottom electrode. Cu ions diffuse through the MoS2 double layers to form atomic-scale filaments. The atomic-scale thickness, combined with the electrochemical metallization, lowers switching voltages down to 0.1-0.2 V, on par with the state of the art. Furthermore, our memristor achieves consistent bipolar and analogue switching, and thus exhibits the synapse-like learning behavior such as the spike-timing dependent plasticity (STDP), the very first STDP demonstration among all 2D-material-based vertical memristors. The demonstrated STDP with low switching voltages is promising not only for low-power neuromorphic computing, but also from the point of view that the voltage range approaches the biological action potentials, opening up a possibility for direct interfacing with mammalian neuronal networks.

238 citations


Authors

Showing all 134111 results

NameH-indexPapersCitations
Yi Cui2201015199725
Hyun-Chul Kim1764076183227
Hannes Jung1592069125069
Yongsun Kim1562588145619
Yu Huang136149289209
Robert W. Heath128104973171
Shuicheng Yan12381066192
Shi Xue Dou122202874031
Young Hee Lee122116861107
Alan L. Yuille11980478054
Yang-Kook Sun11778158912
Sang Yup Lee117100553257
Guoxiu Wang11765446145
Richard G. Baraniuk10777057550
Jef D. Boeke10645652598
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20239
202289
20213,059
20205,735
20195,994
20185,885