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Institution

Samsung

CompanySeoul, South Korea
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.


Papers
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Patent
Yang-Wan Kim1, Oh-Kyong Kwon1, Sangmoo Choi1, Choon-Yul Oh, Kyoung-Do Kim 
25 May 2005
TL;DR: In this paper, a light emitting display including data lines for applying data voltages corresponding to video signals, scan lines for transmitting select signals, and pixel circuits is presented. But the display is not shown in detail.
Abstract: A light emitting display including data lines for applying data voltages corresponding to video signals, scan lines for transmitting select signals, and pixel circuits. Each pixel circuit includes a light emitting element for emitting light, and a transistor including first to third electrodes, for controlling a current output to the third electrode according to a voltage between the first and second electrodes. Each pixel circuit also includes a first switch for diode-connecting the transistor, a capacitor having a first electrode coupled to the first electrode of the transistor, a second switch for applying a corresponding said data voltage to the second electrode of the capacitor in response to a corresponding said select signal from a corresponding said scan line, and a third switch for substantially electrically decoupling the second electrode of the capacitor from a power supply voltage source.

232 citations

Journal ArticleDOI
TL;DR: The environmental factors that affected the accumulation of nitrite in nitrifying reactors were investigated using a mixed culture using a batch reactor with 50 mg-N/l of ammonia and as much as 77% of the removed ammonia accumulated in nitrite.
Abstract: The environmental factors that affected the accumulation of nitrite in nitrifying reactors were investigated using a mixed culture A batch reactor with 50 mg-N/l of ammonia was used The pH, temperature and dissolved oxygen concentration were varied The concentration of unionized free ammonia also changed with the oxidation of ammonia and the variation of pH and temperature The accumulation of nitrite was affected sensitively by pH and temperature A higher nitrite concentration was observed at pH 8-9 or temperature around 30 °C The dissolved oxygen also affected, giving the highest nitrite accumulation at around 15 mg/l These were the favoredconditions for nitrite production The free ammonia concentration influenced thenitrite accumulation also, by inhibiting nitrite oxidation The inhibition becameapparent at a concentration of approximately 4 mg/l or above, but insignificant atbelow 1 mg/l Thus, simultaneously high free ammonia concentration and maximumspecific ammonia-oxidation rate (above 15 × 10-3 mg-N/mg-VSSċh)were needed for a significant nitrite accumulation When the two conditions were met, thenthe highest accumulation was observed when the ratio of the maximum specific oxidationrate of ammonia to the maximum specific oxidation rate of nitrite (ka/kn) was highestUnder the optimal operating conditions of pH 8, 30 °C and 15 mg/l of dissolvedoxygen, as much as 77% of the removed ammonia accumulated in nitrite

232 citations

Posted Content
TL;DR: A unified end-to-end trainable multi-task network that jointly handles lane and road marking detection and recognition that is guided by a vanishing point under adverse weather conditions is proposed and achieves high accuracy and robustness under various conditions in realtime.
Abstract: In this paper, we propose a unified end-to-end trainable multi-task network that jointly handles lane and road marking detection and recognition that is guided by a vanishing point under adverse weather conditions We tackle rainy and low illumination conditions, which have not been extensively studied until now due to clear challenges For example, images taken under rainy days are subject to low illumination, while wet roads cause light reflection and distort the appearance of lane and road markings At night, color distortion occurs under limited illumination As a result, no benchmark dataset exists and only a few developed algorithms work under poor weather conditions To address this shortcoming, we build up a lane and road marking benchmark which consists of about 20,000 images with 17 lane and road marking classes under four different scenarios: no rain, rain, heavy rain, and night We train and evaluate several versions of the proposed multi-task network and validate the importance of each task The resulting approach, VPGNet, can detect and classify lanes and road markings, and predict a vanishing point with a single forward pass Experimental results show that our approach achieves high accuracy and robustness under various conditions in real-time (20 fps) The benchmark and the VPGNet model will be publicly available

232 citations

Patent
10 May 2013
TL;DR: A pixel includes an organic light emitting diode (OLED), a first transistor for controlling an amount of current that flows from a first power supply to a second power supply via the OLED to correspond to a voltage applied to a first node, a second transistor coupled between an anode electrode of the OLED and a feedback line, and having a gate electrode coupled to a control line, a third transistor, a storage capacitor coupled between the first node and a second node, and a fourth transistor coupled with a reference power supply as mentioned in this paper.
Abstract: A pixel includes an organic light emitting diode (OLED), a first transistor for controlling an amount of current that flows from a first power supply to a second power supply via the OLED to correspond to a voltage applied to a first node, a second transistor coupled between an anode electrode of the OLED and a feedback line, and having a gate electrode coupled to a control line, a third transistor coupled between the first node and a data line, and having a gate electrode coupled to a first scan line, a storage capacitor coupled between the first node and a second node, and a fourth transistor coupled between the second node and a reference power supply, and having a gate electrode coupled to a second scan line.

232 citations

Patent
28 Feb 2003
TL;DR: In this paper, a method and system for providing a magnetic element capable of being written using the spin transfer effect and a magnetic memory using the magnetic element is described, which includes a spin tunneling junction, a separation layer and a spin valve.
Abstract: A method and system for providing a magnetic element capable of being written using the spin-transfer effect and a magnetic memory using the magnetic element are disclosed The magnetic element includes a spin tunneling junction, a separation layer and a spin valve In an alternate embodiment, the spin tunneling junction and/or spin valve may be dual The separation layer is between a first free layer of the spin tunneling junction and a second free layer of the spin valve The separation layer is configured so that the two free layers are magnetostatically coupled, preferably with their magnetizations antiparallel In an alternate embodiment, having a dual spin valve and a dual spin tunneling junction, the separation layer may be omitted, and the appropriate distance provided using an antiferromagnetic layer Another embodiment includes shaping the element such that the spin valve has a smaller lateral dimension than the spin tunneling junction

231 citations


Authors

Showing all 134111 results

NameH-indexPapersCitations
Yi Cui2201015199725
Hyun-Chul Kim1764076183227
Hannes Jung1592069125069
Yongsun Kim1562588145619
Yu Huang136149289209
Robert W. Heath128104973171
Shuicheng Yan12381066192
Shi Xue Dou122202874031
Young Hee Lee122116861107
Alan L. Yuille11980478054
Yang-Kook Sun11778158912
Sang Yup Lee117100553257
Guoxiu Wang11765446145
Richard G. Baraniuk10777057550
Jef D. Boeke10645652598
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20239
202289
20213,060
20205,735
20195,994
20185,885