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Institution

Samsung

CompanySeoul, South Korea
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.


Papers
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Proceedings ArticleDOI
01 Dec 2009
TL;DR: In this paper, a self-aligned top-gate amorphous oxide TFTs for large size and high resolution displays are presented, where Ar plasma is exposed on the source/drain region of active layer to minimize the source and drain series resistances.
Abstract: We have demonstrated self-aligned top-gate amorphous oxide TFTs for large size and high resolution displays. The processes such as source/drain and channel engineering have been developed to realize the self-aligned top gate structure. Ar plasma is exposed on the source/drain region of active layer to minimize the source/drain series resistances. To prevent the conductive channel, N 2 O plasma is also treated on the channel region of active layer. We obtain a field effect mobility of 5.5 cm2/V·s, a threshold voltage of 1.1 V, and a sub-threshold swing of 0.35 V/decade at sub-micron a-GIZO TFTs with the length of 0.67#x00B5;m. Furthermore, a-IZO TFTs fabricated for gate and data driver circuits on glass substrate exhibit excellent electrical properties such as a field effect mobility of 115 cm2/V·s, a threshold voltage of 0.2 V, a sub-threshold swing of 0.2 V/decade, and low threshold voltage shift less than 1 V under bias temperature stress for 3 hr.

957 citations

Journal ArticleDOI
TL;DR: IEEE 802.15.7 supports high- data-rate visible light communication up to 96 Mb/s by fast modulation of optical light sources which may be dimmed during their operation by dimming adaptable mechanisms for flicker-free high-data-ratevisible light communication.
Abstract: Visible light communication refers to shortrange optical wireless communication using visible light spectrum from 380 to 780 nm. Enabled by recent advances in LED technology, IEEE 802.15.7 supports high-data-rate visible light communication up to 96 Mb/s by fast modulation of optical light sources which may be dimmed during their operation. IEEE 802.15.7 provides dimming adaptable mechanisms for flicker-free high-data-rate visible light communication.

953 citations

Journal ArticleDOI
Eunjoo Jang1, Shinae Jun1, Hyosook Jang1, Jung Eun Lim1, Byung-ki Kim1, Young-Hwan Kim1 
TL;DR: This work synthesized well passivated green and red light emitting QDs that show almost 100% of QE and demonstrated a 46-inch LCD panel using the white QDLED backlight was successfully demonstrated.
Abstract: Quantum dots (QDs) have attracted great attention as good candidate for the next generation displays due to their narrow emission, and high luminescence efficiency, and tunable emission covering all visible range. However, QDs easily lost their initial optical properties during the process for a device fabrication and practical operation. We synthesized well passivated green and red light emitting QDs that show almost 100% of QE. When the highly luminescent green and red light emitting QDs were applied as color converters in InGaN blue LEDs, resulting cool white QD-LEDs showed 41lm/W and more than 100% of color reproducibility compared to NTSC standard in CIE1931 and maintained their optical properties for a long time operation. We also demonstrated a 46-inch LCD panel using the white QDLED backlight was successfully demonstrated (Figure).

945 citations

Journal ArticleDOI
17 Nov 2016-Nature
TL;DR: A design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers that is able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities is presented.
Abstract: Introducing non-covalent crosslinking moieties to polymer semiconductors produces a stretchable and healable material suitable for wearable electronics. There is great interest and potential in the development of skin-inspired flexible and wearable electronic devices. Such devices require materials that twist, fold and bend with no loss in electronic—or material—properties. Zhenan Bao and colleagues report a conjugated polymer that also incorporates non-covalent interactions between adjacent chains, enabling the material to accommodate up to 100% strain whilst maintaining high charge-carrier mobility. In this proof-of-principle study the authors use the polymers to fabricate flexible and stretchable organic transistors that combine robustness with good electronic properties. Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics1,2. All of the materials and components of such transistors need to be stretchable and mechanically robust3,4. Although there has been recent progress towards stretchable conductors5,6,7,8, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers9,10,11. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods12. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks13,14. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be expected in a wearable device.

939 citations

Journal ArticleDOI
TL;DR: This work proposes a novel FTL design that combines the two different granularities in address translation, motivated by the idea that coarse grain address translation lowers the resources required to maintain translation information, which is crucial in mobile consumer products for cost and power consumption reasons, while fine grain addresstranslation is efficient in handling small size writes.
Abstract: Flash memory is becoming increasingly important as nonvolatile storage for mobile consumer electronics due to its low power consumption and shock resistance. However, it imposes technical challenges in that a write should be preceded by an erase operation, and that this erase operation can be performed only in a unit much larger than the write unit. To address these technical hurdles, an intermediate software layer called a flash translation layer (FTL) is generally employed to redirect logical addresses from the host system to physical addresses in flash memory. Previous approaches have performed this address translation at the granularity of either a write unit (page) or an erase unit (block). We propose a novel FTL design that combines the two different granularities in address translation. This is motivated by the idea that coarse grain address translation lowers the resources required to maintain translation information, which is crucial in mobile consumer products for cost and power consumption reasons, while fine grain address translation is efficient in handling small size writes. Performance evaluation based on trace-driven simulation shows that the proposed scheme significantly outperforms previously proposed approaches.

927 citations


Authors

Showing all 134111 results

NameH-indexPapersCitations
Yi Cui2201015199725
Hyun-Chul Kim1764076183227
Hannes Jung1592069125069
Yongsun Kim1562588145619
Yu Huang136149289209
Robert W. Heath128104973171
Shuicheng Yan12381066192
Shi Xue Dou122202874031
Young Hee Lee122116861107
Alan L. Yuille11980478054
Yang-Kook Sun11778158912
Sang Yup Lee117100553257
Guoxiu Wang11765446145
Richard G. Baraniuk10777057550
Jef D. Boeke10645652598
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20239
202289
20213,059
20205,735
20195,994
20185,885