Institution
Samsung
Company•Seoul, South Korea•
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.
Papers published on a yearly basis
Papers
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10 Jul 2014TL;DR: In this paper, the UE determines a number of repetitions for a first RA preamble transmission from its path-loss measurement, and the SIB also informs an association between a range of path loss values and the number of RA repetitions.
Abstract: Methods and apparatus are provided for a User Equipment (UE) and a base station in communication with each other to determine parameters for a Random Access (RA) process. The base station informs the UE through a System Information Block (SIB) of a number of resource sets for RA preamble transmission by the UE. Each resource set is associated with a number of repetitions for a RA preamble transmission, with a maximum number of RA preamble transmissions, and with a number of repetitions the base station transmits a response to a RA preamble reception. The SIB also informs an association between a range of path-loss values and a number of RA preamble repetitions. The UE determines a number of repetitions for a first RA preamble transmission from its path-loss measurement.
203 citations
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TL;DR: In this article, the effect of the channel deposition pressure on the device performance of amorphous indium-gallium-zinc oxide (a-IGZO) transistors was investigated in detail.
Abstract: The effect of the channel deposition pressure on the device performance of amorphous indium-gallium-zinc oxide (a-IGZO) transistors was investigated in detail. The performance of the fabricated transistors improved monotonously with decreasing chamber pressure: at a pressure of 1 mTorr, the field-effect mobility (μ FE ) and subthreshold gate swing (S) of the a-IGZO thin-film transistors were dramatically improved to 21.8 cm 2 /Vs and 0.17 V/decade, respectively, compared to those (11.4 cm 2 /Vs and 0.87 V/decade) of the reference transistors prepared at 5 mTorr. This enhancement in the subthreshold characteristics was attributed to the reduction of the bulk defects of the a-IGZO channel, which might result from the greater densification of the a-IGZO films at the lower deposition pressure.
202 citations
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TL;DR: In this paper, the effects of the indium content on characteristics of nanocrystalline InGaZnO (IGZO) films grown by a solgel method and their thin film transistors (TFTs) have been investigated.
Abstract: The effects of the indium content on characteristics of nanocrystalline InGaZnO (IGZO) films grown by a sol-gel method and their thin film transistors (TFTs) have been investigated Excess indium incorporation into IGZO enhances the field effect mobilities of the TFTs due to the increase in conducting path ways and decreases the grain size and the surface roughness of the films because more InO2− ions induce cubic stacking faults with IGZO These structural variations result in a decrease in density of interfacial trap sites at the semiconductor-gate insulator interface, leading to an improvement of the subthreshold gate swing of the TFTs
202 citations
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TL;DR: The flash file system as mentioned in this paper includes a flash memory and a subsystem interfacing between it and a host system, which includes a hierarchical structure of a host interface, cache memory system, flash translation layer unit, and flash memory interface.
Abstract: The flash file system includes a flash memory and a subsystem interfacing between the flash memory and a host system. The subsystem includes a hierarchical structure of a host system interface, cache memory system, flash translation layer unit and a flash memory interface. The host system interface interfaces with the host system. The cache memory system has a storage capacity of a predetermined number of data units and stores data for transfer to and from the host system via the host system interface. The flash translation layer unit maps a logical address received from the host system via the host system interface and the cache memory into a physical address of the flash memory. The flash memory interface interfaces with the flash memory to transfer data to the flash memory from the cache memory system based on the physical address received from the flash translation layer unit and to transfer data from the flash memory to the cache memory system based on the physical address received from the flash translation layer unit.
202 citations
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TL;DR: To enable practical implementation, a new limited feedback algorithm is proposed that exploits the structure of the algorithm to avoid full channel quantization and performs close to the sum capacity of the MIMO broadcast channel even with limited feedback.
Abstract: In this paper, we propose a new joint optimization of linear transmit beamforming and receive combining vectors for the multiple-input multiple-output (MIMO) broadcast channel. We consider the transmission of a single information stream to two users with two or more receive antennas. Unlike past work in which iterative computation is required to design the beamformers, we derive specific formulations for the transmit beamformers for two active users via a power iteration and a generalized eigen analysis. To enable practical implementation, a new limited feedback algorithm is proposed that exploits the structure of the algorithm to avoid full channel quantization. The feedback overhead of the proposed algorithm is independent of the number of receive antennas. Monte Carlo simulations are used to evaluate the bit error rate and the sum rate performances of the proposed algorithm. Simulation results show that the proposed method performs close to the sum capacity of the MIMO broadcast channel even with limited feedback.
202 citations
Authors
Showing all 134111 results
Name | H-index | Papers | Citations |
---|---|---|---|
Yi Cui | 220 | 1015 | 199725 |
Hyun-Chul Kim | 176 | 4076 | 183227 |
Hannes Jung | 159 | 2069 | 125069 |
Yongsun Kim | 156 | 2588 | 145619 |
Yu Huang | 136 | 1492 | 89209 |
Robert W. Heath | 128 | 1049 | 73171 |
Shuicheng Yan | 123 | 810 | 66192 |
Shi Xue Dou | 122 | 2028 | 74031 |
Young Hee Lee | 122 | 1168 | 61107 |
Alan L. Yuille | 119 | 804 | 78054 |
Yang-Kook Sun | 117 | 781 | 58912 |
Sang Yup Lee | 117 | 1005 | 53257 |
Guoxiu Wang | 117 | 654 | 46145 |
Richard G. Baraniuk | 107 | 770 | 57550 |
Jef D. Boeke | 106 | 456 | 52598 |