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Institution

Samsung

CompanySeoul, South Korea
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.


Papers
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Journal ArticleDOI
TL;DR: The feasibility, advantages, and challenges of future wireless communications over the Eband frequencies are investigated, the achievability of a nontrivial multiplexing gain in fixed point-to-point E- band links is analyzed, and an E-band mobile broadband (EMB) system is proposed as a candidate for the next generation mobile communication networks.
Abstract: With the formidable growth of various booming wireless communication services that require ever increasing data throughputs, the conventional microwave band below 10 GHz, which is currently used by almost all mobile communication systems, is going to reach its saturation point within just a few years Therefore, the attention of radio system designers has been pushed toward ever higher segments of the frequency spectrum in a quest for increased capacity In this article we investigate the feasibility, advantages, and challenges of future wireless communications over the Eband frequencies We start with a brief review of the history of the E-band spectrum and its light licensing policy as well as benefits/challenges Then we introduce the propagation characteristics of E-band signals, based on which some potential fixed and mobile applications at the E-band are investigated In particular, we analyze the achievability of a nontrivial multiplexing gain in fixed point-to-point E-band links, and propose an E-band mobile broadband (EMB) system as a candidate for the next generation mobile communication networks The channelization and frame structure of the EMB system are discussed in detail

198 citations

Patent
20 Jun 2002
TL;DR: A polymer light emitting material is a light emitting mechanism based on transition from an excited triplet state to a ground state, or transition through a excited triplets state to ground state of an electron energy level, and the material comprises a nonionic light emitting part which constitutes a part of the polymer as discussed by the authors.
Abstract: A polymer light emitting material, wherein the material has a light emitting mechanism based on transition from an excited triplet state to a ground state or transition through an excited triplet state to a ground state of an electron energy level, and the material comprises a nonionic light emitting part which constitutes a part of the polymer or is bound to the polymer. The polymer light emitting material exhibits high light emission efficiency above 5%, which is the limit of external quantum efficiency of fluorescence and can be designed so as to have a large area and hence are suitable for mass production of organic light emitting devices.

198 citations

Journal ArticleDOI
TL;DR: The new NCM showed far less gas emission during high temperature storage at charged states, and higher volumetric capacity thanks to its high bulk density, which is expected to provide optimal performances for pouch type lithium ion batteries.
Abstract: Li(Ni(0.8)Co(0.1)Mn(0.1))O(2) (NCM811) was synthesized using alkali chlorides as a flux and the performance as a cathode material for lithium ion batteries was examined. Primary particles of the powder were segregated and grown separately in the presence of liquid state fluxes, which induced each particle to be composed of one primary particle with well-developed facet planes, not the shape of agglomerates as appears with commercial NCMs. The new NCM showed far less gas emission during high temperature storage at charged states, and higher volumetric capacity thanks to its high bulk density. The material is expected to provide optimal performances for pouch type lithium ion batteries, which require high volumetric capacity and are vulnerable to deformation caused by gas generation from the electrode materials.

197 citations

Patent
18 Dec 2009
TL;DR: In this article, the authors present a nonvolatile memory device including a plurality of intergate insulating patterns and an active pattern, with the active pattern extending upward along the sidewalls of the intergate and the cell gate patterns.
Abstract: Some embodiments of the present invention provide nonvolatile memory devices including a plurality of intergate insulating patterns and a plurality of cell gate patterns that are alternately and vertically stacked on a substrate, an active pattern disposed on the substrate, the active pattern extending upwardly along sidewalls of the intergate insulating patterns and the cell gate patterns, a plurality of charge storage patterns disposed between the plurality of cell gate patterns and the active pattern, respectively, the plurality of the charge storage patterns being separated from each other, tunnel insulating patterns disposed between the plurality of cell gate patterns and the active pattern, respectively, and the tunnel insulating patterns extending to be directly connected to each other and a plurality of blocking insulating patterns disposed between the plurality of cell gate patterns and the plurality of charge storage patterns, respectively. A sidewall of the cell gate pattern may be recessed laterally so that an undercut region is defined and the charge storage pattern is disposed in the undercut region.

197 citations

Journal ArticleDOI
Sergey Zhidkov1
TL;DR: The proposed algorithm compensates impulsive noise in a frequency domain after OFDM demodulation and channel equalization and is applied to DVB-T and its performance is studied by means of simulation.
Abstract: Orthogonal frequency division multiplexing (OFDM) is a technique used for terrestrial digital video broadcasting (DVB-T) and many other modern applications. The longer OFDM symbol duration provides an advantage in a presence of weak impulsive noise, because impulsive noise energy is spread among simultaneously transmitted OFDM sub-carriers. However, it has been recently recognized that this advantage turns into a disadvantage if the impulsive noise energy exceeds certain threshold. In this paper the algorithm for impulsive noise suppression in OFDM receivers is proposed and investigated. Whereas traditional methods for impulsive noise suppression are implemented in a time domain before OFDM demodulation, proposed algorithm compensates impulsive noise in a frequency domain after OFDM demodulation and channel equalization. The method is applied to DVB-T and its performance is studied by means of simulation.

197 citations


Authors

Showing all 134111 results

NameH-indexPapersCitations
Yi Cui2201015199725
Hyun-Chul Kim1764076183227
Hannes Jung1592069125069
Yongsun Kim1562588145619
Yu Huang136149289209
Robert W. Heath128104973171
Shuicheng Yan12381066192
Shi Xue Dou122202874031
Young Hee Lee122116861107
Alan L. Yuille11980478054
Yang-Kook Sun11778158912
Sang Yup Lee117100553257
Guoxiu Wang11765446145
Richard G. Baraniuk10777057550
Jef D. Boeke10645652598
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20239
202289
20213,060
20205,735
20195,994
20185,885