Samsung

About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.

Low Roll‐Off and High Efficiency Orange Organic Light Emitting Diodes with Controlled Co‐Doping of Green and Red Phosphorescent Dopants in an Exciplex Forming Co‐Host

Abstract: An exciplex forming co-host is introduced in order to fabricate orange organic light-emitting diodes (OLEDs) with high efficiency, low driving voltage and an extremely low efficiency roll-off, by the co-doping of green and red emitting phosphorescence dyes in the host. The orange OLEDs achieves a low turn-on voltage of 2.4 V, which is equivalent to the triplet energy gap of the phosphorescent-green emitting dopant, and a very high external quantum efficiency (EQE) of 25.0%. Moreover, the OLEDs show low efficiency roll-off with an EQE of over 21% at 10 000 cdm−2. The device displays a very good orange color (CIE of (0.501, 0.478) at 1000 cdm−2) with very little color shift with increasing luminance. The transient electroluminescence of the OLEDs indicate that both energy transfer and direct charge trapping takes place in the devices.

Method of forming a layer and forming a capacitor of a semiconductor device having the same layer

Abstract: In a method of forming a layer using an atomic layer deposition process, after a substrate is loaded into a chamber, a first reactant is provided onto the substrate. The first reactant is partially chemisorbed on the substrate. A second reactant is introduced into the chamber to form a preliminary layer on the substrate by chemically reacting the second reactant with the chemisorbed first reactant. Impurities in the preliminary layer and unreacted reactants are simultaneously removed using a plasma for removing impurities to thereby form the layer on the substrate. The impurities in the layer may be effectively removed so that the layer may have reduced leakage current.

A phase III randomised, double-blind, parallel-group study comparing SB4 with etanercept reference product in patients with active rheumatoid arthritis despite methotrexate therapy

Abstract: Objectives To compare the efficacy and safety of SB4 (an etanercept biosimilar) with reference product etanercept (ETN) in patients with moderate to severe rheumatoid arthritis (RA) despite methotrexate (MTX) therapy. Methods This is a phase III, randomised, double-blind, parallel-group, multicentre study with a 24-week primary endpoint. Patients with moderate to severe RA despite MTX treatment were randomised to receive weekly dose of 50 mg of subcutaneous SB4 or ETN. The primary endpoint was the American College of Rheumatology 20% (ACR20) response at week 24. Other efficacy endpoints as well as safety, immunogenicity and pharmacokinetic parameters were also measured. Results 596 patients were randomised to either SB4 (N=299) or ETN (N=297). The ACR20 response rate at week 24 in the per-protocol set was 78.1% for SB4 and 80.3% for ETN. The 95% CI of the adjusted treatment difference was −9.41% to 4.98%, which is completely contained within the predefined equivalence margin of −15% to 15%, indicating therapeutic equivalence between SB4 and ETN. Other efficacy endpoints and pharmacokinetic endpoints were comparable. The incidence of treatment-emergent adverse events was comparable (55.2% vs 58.2%), and the incidence of antidrug antibody development up to week 24 was lower in SB4 compared with ETN (0.7% vs 13.1%). Conclusions SB4 was shown to be equivalent with ETN in terms of efficacy at week 24. SB4 was well tolerated with a lower immunogenicity profile. The safety profile of SB4 was comparable with that of ETN. Trial registration numbers NCT01895309, EudraCT 2012-005026-30.

Nonvolatile semiconductor memory

Abstract: A nonvolatile semiconductor memory device comprising an array of cell units, each cell unit including at least one memory transistor which has a floating gate and a control gate, the array being divided into a plurality of memory blocks each having a certain number of cell units. A selected memory block is erased by an erase voltage applied to a semiconductor substrate while unselected memory blocks are prevented from erasing by capacitive coupling of the erase voltage to floated word lines connected to control gates of memory transistors of the unselected memory blocks. In a program mode where a program voltage is applied to a selected word line of a selected memory block and a pass voltage is applied to unselected word lines of the selected memory block, channel regions and source and drain junctions of memory transistors of cell units in the selected memory block are charged to a program inhibition voltage. Channel regions and source and drain junctions of cell units associated with memory transistors programmed to the other binary data are discharged to be programmed while those of cell units associated with nonprogrammed memory transistors are maintained to the program inhibition voltage to prevent programming.

Wireless charging apparatus and method

Abstract: Methods and apparatus for wireless charging are provided. Transmission power transmitted from a wireless power transmitter is received at a power receiver of a wireless power receiver. A battery of the wireless power receiver is charged with the received transmission power. It is determined whether the battery is fully charged. A packet from a communication unit of the wireless power receiver is transmitted to the wireless power transmitter when the battery is fully charged. An auxiliary charge of the battery is performed by receiving strength-reduced transmission power from the wireless power transmitter.