Samsung

About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.

Displacements of the resonant peaks of a long-period fiber grating induced by a change of ambient refractive index.

Abstract: We present a graphic method of analyzing the spectral displacements of a long-period fiber grating as a function of ambient index. Mode dependence of the maximum displacement, disappearance of a particular resonance peak, and spectral behavior when the ambient index is larger than that of the cladding material are investigated and compared with experimental results.

Gate-All-Around (GAA) Twin Silicon Nanowire MOSFET (TSNWFET) with 15 nm Length Gate and 4 nm Radius Nanowires

Abstract: GAA TSNWFET with 15 nm gate length and 4 nm radius nanowires is demonstrated and shows excellent short channel immunity. p-TSNWFET shows high driving current of 1.94 mA/?m while n-TSNWFET shows on-current on-current on-current of 1.44 mA/?m. Merits of TSNWFET and performance enhancement of p-TSNWFET are explored using 3-D and quantum simulation.

Method for forming dielectric film of capacitor having different thicknesses partly

Abstract: The present invention discloses a method for forming a dielectric film having improved leakage current characteristics in a capacitor. A lower electrode having a surface and a rounded protruding portion is formed on a semiconductor substrate. The surface and the protruding portion define at least one concave area. A chemisorption layer is then formed on the surface and the rounded protruding portion by supplying a first reactant. Also, a physisorption layer is formed on the chemisorption layer from the first reactant. Next, a portion of the physisorption layer is removed and a portion of the physisorption layer is left on the concave area. Subsequently, the chemisorption layer and the portion of the physisorption layer on the concave area react with a second reactant to form a dielectric film on the surface of the lower electrode. The thickness of said dielectric film is greater on the concave area than on the protruding portion, thereby reducing leakage current.

Highly stable and flexible silver nanowire–graphene hybrid transparent conducting electrodes for emerging optoelectronic devices

Abstract: A new AgNW–graphene hybrid transparent conducting electrode (TCE) was prepared by dry-transferring a chemical vapor deposition (CVD)-grown monolayer graphene onto a pristine AgNW TCE. The AgNW–graphene hybrid TCE exhibited excellent optical and electrical properties as well as mechanical flexibility. The AgNW–graphene hybrid TCE showed highly enhanced thermal oxidation and chemical stabilities because of the superior gas-barrier property of the graphene protection layer. Furthermore, the organic solar cells with the AgNW–graphene hybrid TCE showed excellent photovoltaic performance as well as superior long-term stability under ambient conditions.

Microwave vs. Millimeter-Wave Propagation Channels: Key Differences and Impact on 5G Cellular Systems

Abstract: Fifth generation cellular systems will be deployed in the microwave and millimeterwave (mmWave) frequency bands (i.e., between 0.5100 GHz). Propagation characteristics at these bands have a fundamental impact on each aspect of the cellular architecture, ranging from equipment design to real-time performance in the field. While we have a reasonable understanding of the propagation characteristics at microwave (< 6 GHz) frequencies, the same cannot be said for mmWave. This article explains key differences in the propagation characteristics between the microwave and mmWave bands, and further gives examples of how these differences impact 5G system design.