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Institution

Samsung

CompanySeoul, South Korea
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.


Papers
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Journal ArticleDOI
TL;DR: This study investigates the triboelectric charging behaviors of various 2D layered materials, including MoS2, MoSe2, WS2 , WSe2 , graphene, and graphene oxide in a triboeLECTric series using the concept of a tribOElectric nanogenerator, and confirms the position of 2D materials in the Triboelectrics series.
Abstract: Recently, as applications based on triboelectricity have expanded, understanding the triboelectric charging behavior of various materials has become essential. This study investigates the triboelectric charging behaviors of various 2D layered materials, including MoS2 , MoSe2 , WS2 , WSe2 , graphene, and graphene oxide in a triboelectric series using the concept of a triboelectric nanogenerator, and confirms the position of 2D materials in the triboelectric series. It is also demonstrated that the results are obviously related to the effective work functions. The charging polarity indicates the similar behavior regardless of the synthetic method and film thickness ranging from a few hundred nanometers (for chemically exfoliated and restacked films) to a few nanometers (for chemical vapor deposited films). Further, the triboelectric charging characteristics could be successfully modified via chemical doping. This study provides new insights to utilize 2D materials in triboelectric devices, allowing thin and flexible device fabrication.

187 citations

Patent
Gun Ho Song1, Si Chan Sung1
09 Aug 1999
TL;DR: A lead frame for manufacturing semiconductor device packages has inner leads, tie bars and a die pad that are formed with irregular dimples on their respective upper and lower surfaces.
Abstract: A lead frame for manufacturing semiconductor device packages has inner leads, tie bars and a die pad that are formed with irregular dimples on their respective upper and lower surfaces. This improves the bonding strength between the lead frame and the molding compound as well as between the die pad and a semiconductor device. The dimples are formed during the manufacture of the lead frame which allows the lead frame to be economically and easily manufactured.

187 citations

Patent
Injeong Choi1
17 Feb 2005
TL;DR: In this paper, a domain-based speech recognition method and apparatus is proposed, which performs speech recognition by using a first language model and generating a first recognition result including a plurality of first recognition sentences.
Abstract: A domain-based speech recognition method and apparatus, the method including: performing speech recognition by using a first language model and generating a first recognition result including a plurality of first recognition sentences; selecting a plurality of candidate domains, by using a word included in each of the first recognition sentences and having a confidence score equal to or higher than a predetermined threshold, as a domain keyword; performing speech recognition with the first recognition result, by using an acoustic model specific to each of the candidate domains and a second language model and generating a plurality of second recognition sentences; and selecting at least one or more final recognition sentence from the first recognition sentences and the second recognition sentences. According to this method and apparatus, the effect of a domain extraction error by misrecognition of a word on selection of a final recognition result can be minimized.

187 citations

Journal ArticleDOI
TL;DR: The global situation of spectrum for 5G, both below and above 6 GHz, in both the regulatory status and technical aspects are introduced and the technical challenges of supporting 5G in millimeter-wave spectrum, such as coverage limitation and implementation aspects, are discussed.
Abstract: Availability of widely harmonized mobile spectrum is crucial for the success of 5G mobile communications, fulfilling the visions and requirements and delivering the full range of potential capabilities for 5G. This article introduces the global situation of spectrum for 5G, both below and above 6 GHz, in both the regulatory status and technical aspects. In particular, the technical challenges of supporting 5G in millimeter-wave spectrum, such as coverage limitation and implementation aspects, are discussed.

187 citations

Journal ArticleDOI
TL;DR: In this paper, the authors report the presence of defects in CH3NH3PbI3, which is one of the main factors that deteriorates the performance of perovskite solar cells.
Abstract: We report the presence of defects in CH3NH3PbI3, which is one of the main factors that deteriorates the performance of perovskite solar cells. Although the efficiency of the perovskite solar cells has been improved by curing defects using various methods, deeply trapped defects in the perovskite layer have not been systematically studied, and their function is still unclear. The comparison and analysis of defects in differently prepared perovskite solar cells reveals that both solar cells have two kinds of deep level defects (E1 and E2). In the one-pot solution processed solar cell, the defect state E1 is dominant, while E2 is the major defect in the solar cell prepared using the cuboid method. Since the energy level of E1 is higher than that of E2, the cuboid solar cell shows higher open-circuit voltage and efficiency.

187 citations


Authors

Showing all 134111 results

NameH-indexPapersCitations
Yi Cui2201015199725
Hyun-Chul Kim1764076183227
Hannes Jung1592069125069
Yongsun Kim1562588145619
Yu Huang136149289209
Robert W. Heath128104973171
Shuicheng Yan12381066192
Shi Xue Dou122202874031
Young Hee Lee122116861107
Alan L. Yuille11980478054
Yang-Kook Sun11778158912
Sang Yup Lee117100553257
Guoxiu Wang11765446145
Richard G. Baraniuk10777057550
Jef D. Boeke10645652598
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20239
202289
20213,060
20205,735
20195,994
20185,885