Institution
Samsung
Company•Seoul, South Korea•
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.
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Papers
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03 Mar 2010TL;DR: In this paper, a display device displays an image having a substantially uniform brightness by compensating for variations of the threshold voltages of driving transistors and compensating the deterioration of an organic light emitting diode.
Abstract: A display device displays an image having a substantially uniform brightness by compensating for variations of the threshold voltages of driving transistors and compensating for the deterioration of an organic light emitting diode. A pixel includes an organic light emitting diode, two transistors, a storage capacitor, and a compensation unit. A driving transistor supplies a current to an OLED corresponding to the voltage in the storage capacitor. The compensation unit controls a voltage of a gate electrode of the driving transistor corresponding to a deterioration of the organic light emitting diode, and couples one electrode of the driving transistor to the data line during a compensation period, during which a threshold voltage of the driving transistor is compensated.
185 citations
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KAIST1, Pohang University of Science and Technology2, Samsung3, The Aerospace Corporation4, Seoul National University5, Korea Research Institute of Standards and Science6, Korea Electrotechnology Research Institute7, Yonsei University8, KT Corporation9, Princeton Plasma Physics Laboratory10, Massachusetts Institute of Technology11, General Atomics12, Oak Ridge National Laboratory13, Lawrence Livermore National Laboratory14, New York University15
TL;DR: The Korea Superconducting Tokamak Advanced Research (KSTAR) project is the major effort of the national fusion programme of the Republic of Korea as mentioned in this paper, which aims to develop a steady state capable advanced superconducting tokamak to establish a scientific and technological basis for an attractive fusion reactor.
Abstract: The Korea Superconducting Tokamak Advanced Research (KSTAR) project is the major effort of the national fusion programme of the Republic of Korea. Its aim is to develop a steady state capable advanced superconducting tokamak to establish a scientific and technological basis for an attractive fusion reactor. The major parameters of the tokamak are: major radius 1.8 m, minor radius 0.5 m, toroidal field 3.5 T and plasma current 2 MA, with a strongly shaped plasma cross-section and double null divertor. The initial pulse length provided by the poloidal magnet system is 20 s, but the pulse length can be increased to 300 s through non-inductive current drive. The plasma heating and current drive system consists of neutral beams, ion cyclotron waves, lower hybrid waves and electron cyclotron waves for flexible profile control in advanced tokamak operating modes. A comprehensive set of diagnostics is planned for plasma control, performance evaluation and physics understanding. The project has completed its conceptual design and moved to the engineering design and construction phase. The target date for the first plasma is 2002.
185 citations
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07 Apr 2004TL;DR: In this article, a cell reselection method by a user equipment (UE) receiving an MBMS service in a serving cell of a mobile communication system is described. But the UE does not receive control data of the serving cell, including configuration information necessary for accessing MBMS control channels (MCCHs) of neighbor cells.
Abstract: A cell reselection method by a user equipment (UE) receiving an MBMS service in a serving cell of a mobile communication system. The UE receives control data of the serving cell, including configuration information necessary for accessing MBMS control channels (MCCHs) of neighbor cells and control information necessary for accessing an MBMS data transport channel (MTCH) of the serving cell, over an MCCH of the serving cell, and stores the received control data, while the MBMS service is provided in the serving cell. If cell reselection to a target cell, which is one of the neighbor cells is determined, the UE moves to the target cell by utilizing configuration information stored for the target cell.
184 citations
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TL;DR: It is shown that parkin also controls mitochondrialBiogenesis and that defects in mitochondrial biogenesis drive the loss of dopamine neurons due to the absence of parkin, suggesting that maintaining mitochondrial biynthesis is critically important in the survival of DA neurons.
Abstract: Mutations in parkin lead to early-onset autosomal recessive Parkinson’s disease (PD) and inactivation of parkin is thought to contribute to sporadic PD. Adult knockout of parkin in the ventral midbrain of mice leads to an age-dependent loss of dopamine neurons that is dependent on the accumulation of parkin interacting substrate (PARIS), zinc finger protein 746 (ZNF746), and its transcriptional repression of PGC-1α. Here we show that adult knockout of parkin in mouse ventral midbrain leads to decreases in mitochondrial size, number, and protein markers consistent with a defect in mitochondrial biogenesis. This decrease in mitochondrial mass is prevented by short hairpin RNA knockdown of PARIS. PARIS overexpression in mouse ventral midbrain leads to decreases in mitochondrial number and protein markers and PGC-1α–dependent deficits in mitochondrial respiration. Taken together, these results suggest that parkin loss impairs mitochondrial biogenesis, leading to declining function of the mitochondrial pool and cell death.
184 citations
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TL;DR: By using graphene directly as a substrate, vertically well-aligned zinc oxide (ZnO) nanowires and nanowalls were obtained systematically by controlling gold (Au) catalyst thickness and growth time without inflicting significant thermal damage on the graphene layer during thermal chemical vapor deposition of ZnO at high temperature of about 900 °C.
Abstract: Precise control of morphologies of one- or two-dimensional nanostructures during growth has not been easy, usually degrading device performance and therefore limiting applications to various advanced nanoscale electronics and optoelectronics. Graphene could be a platform to serve as a substrate for both morphology control and direct use of electrodes due to its ideal monolayer flatness with π electrons. Here, we report that, by using graphene directly as a substrate, vertically well-aligned zinc oxide (ZnO) nanowires and nanowalls were obtained systematically by controlling gold (Au) catalyst thickness and growth time without inflicting significant thermal damage on the graphene layer during thermal chemical vapor deposition of ZnO at high temperature of about 900 °C. We clarify Au nanoparticle positions at graphene–ZnO heterojunctions that are very important in realizing advanced nanoscale electronic and optoelectronic applications of such nanostructures. Further, we demonstrate a piezoelectric nanogener...
184 citations
Authors
Showing all 134111 results
Name | H-index | Papers | Citations |
---|---|---|---|
Yi Cui | 220 | 1015 | 199725 |
Hyun-Chul Kim | 176 | 4076 | 183227 |
Hannes Jung | 159 | 2069 | 125069 |
Yongsun Kim | 156 | 2588 | 145619 |
Yu Huang | 136 | 1492 | 89209 |
Robert W. Heath | 128 | 1049 | 73171 |
Shuicheng Yan | 123 | 810 | 66192 |
Shi Xue Dou | 122 | 2028 | 74031 |
Young Hee Lee | 122 | 1168 | 61107 |
Alan L. Yuille | 119 | 804 | 78054 |
Yang-Kook Sun | 117 | 781 | 58912 |
Sang Yup Lee | 117 | 1005 | 53257 |
Guoxiu Wang | 117 | 654 | 46145 |
Richard G. Baraniuk | 107 | 770 | 57550 |
Jef D. Boeke | 106 | 456 | 52598 |