Samsung

About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.

Methods and apparatus for resource pool design for vehicular communications

Abstract: A method of a first user equipment (UE) in a wireless vehicular communication network. The method includes receiving a plurality of messages including control and data messages from at least one second UE using at least one of multiple resource pools, wherein the plurality of messages comprise event-triggered or periodic traffic and the multiple resource pools comprise at least one of dedicated or shared resource pools. The method further includes determining the at least one of the multiple resource pools to transmit the plurality of messages to the at least one second UE, wherein multiple traffic types or priorities are multiplexed in the at least one of the multiple resource pools. The method further includes dynamically adjusting resource selection of the first UE within the at least one of the multiple resource pools based on a state of the wireless vehicular communication network and directly communicating the plurality of messages to the at least one second UE using the at least one of the multiple resource pools.

Large thermoelectric figure-of-merits from SiGe nanowires by simultaneously measuring electrical and thermal transport properties.

Abstract: The strongly correlated thermoelectric properties have been a major hurdle for high-performance thermoelectric energy conversion. One possible approach to avoid such correlation is to suppress phonon transport by scattering at the surface of confined nanowire structures. However, phonon characteristic lengths are broad in crystalline solids, which makes nanowires insufficient to fully suppress heat transport. Here, we employed Si–Ge alloy as well as nanowire structures to maximize the depletion of heat-carrying phonons. This results in a thermal conductivity as low as ∼1.2 W/m-K at 450 K, showing a large thermoelectric figure-of-merit (ZT) of ∼0.46 compared with those of SiGe bulks and even ZT over 2 at 800 K theoretically. All thermoelectric properties were “simultaneously” measured from the same nanowires to facilitate accurate ZT measurements. The surface-boundary scattering is prominent when the nanowire diameter is over ∼100 nm, whereas alloying plays a more important role in suppressing phonon trans...

Defining 4G technology from the users perspective

Abstract: The ever-increasing growth of user demand, the limitations of the third generation of wireless mobile communication systems, and the emergence of new mobile broadband technologies on the market have brought researchers and industries to a thorough reflection on the fourth generation. Many prophetic visions have appeared in the literature presenting 4G as the ultimate boundary of wireless mobile communication without any limit to its potential, but in practical terms not giving any design rules and thus any definition of it. In this article we give a pragmatic definition of 4G derived from a new user-centric methodology that considers the user as the "cornerstone" of the design. In this way, we devise fundamental user scenarios that implicitly reveal the key features of 4G, which are then expressed explicitly in a new framework - the "user-centric" system - that describes the various level of interdependency among them. This approach consequently contributes to the identification of the real technical step-up of 4G with respect to 3G. Finally, an example of a potential 4G application is also given in order to demonstrate the validity of the overall methodology

Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique

Abstract: There are provided methods of fabricating a silicon-doped metal oxide layer on a semiconductor substrate using an atomic layer deposition technique. The methods include an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon-doped metal oxide layer formation cycle Q times. At least one of the values K and Q is an integer of 2 or more. K and Q are integers ranging from 1 to about 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, and then injecting an oxide gas into the reactor. The silicon-doped metal oxide layer formation cycle includes supplying a metal source gas including silicon into a reactor containing the substrate, and then injecting an oxide gas into the reactor. The sequence of operations of repeatedly performing the metal oxide layer formation cycle K times, followed by repeatedly performing the silicon-doped metal oxide layer formation cycle Q times, is performed one or more times until a silicon-doped metal oxide layer with a desired thickness is formed on the substrate. In addition, a method of fabricating a silicon-doped hafnium oxide (Si-doped HfO 2 ) layer according to a similar invention method is also provided.

Edge-adaptive transforms for efficient depth map coding

Abstract: In this work a new set of edge-adaptive transforms (EATs) is presented as an alternative to the standard DCTs used in image and video coding applications. These transforms avoid filtering across edges in each image block, thus, they avoid creating large high frequency coefficients. These transforms are then combined with the DCT in H.264/AVC and a transform mode selection algorithm is used to choose between DCT and EAT in an RD-optimized manner. These transforms are applied to coding depth maps used for view synthesis in a multi-view video coding system, and provides up to 29% bit rate reduction for a fixed quality in the synthesized views.