Institution
Samsung
Company•Seoul, South Korea•
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.
Papers published on a yearly basis
Papers
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TL;DR: Graphene nanoribbons show promise for high-performance field-effect transistors, however they often suffer from short lengths and wide band gaps, so a bottom-up synthesis approach is used to fabricate 9- and 13-atom wide ribbons enabling short-channel transistors with 105 on-off current ratio.
Abstract: Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap of these GNRs have prevented the fabrication of devices with the desired performance and switching behaviour. Here, by fabricating short channel (Lch ~20 nm) devices with a thin, high-k gate dielectric and a 9-atom wide (0.95 nm) armchair GNR as the channel material, we demonstrate FETs with high on-current (Ion >1 uA at Vd = -1 V) and high Ion/Ioff ~10^5 at room temperature. We find that the performance of these devices is limited by tunnelling through the Schottky barrier (SB) at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high performance short-channel FETs with bottom-up synthesized armchair GNRs.
167 citations
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24 Aug 2009TL;DR: In this paper, an image edit method and apparatus for a mobile terminal having a touchscreen is provided for intuitively editing images by means of edit tools provided in the touchscreen, which includes displaying a first image with an edit tool in a touchscreen, breaking, when the first image is a motion picture, and editing at least one of the frames using the edit tool.
Abstract: An image edit method and apparatus for a mobile terminal having a touchscreen is provided for intuitively editing images by means of edit tools provided in the touchscreen. The image edit method includes displaying a first image with an edit tool in the touchscreen, breaking, when the first image is a motion picture, the first image into a plurality of frames and editing at least one of the frames using the edit tool in accordance with user manipulation, and acquiring, when the first image is a still image, a second image from an image source, and generating a third image by synthesizing the first and second images.
167 citations
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TL;DR: In this paper, the authors investigated the effect of personal characteristics (proactive personality) and contextual characteristics (organizational learning culture and job complexity) on employees' intrinsic intrinsic beliefs.
Abstract: This article investigated the effect of personal characteristics (proactive personality) and contextual characteristics (organizational learning culture and job complexity) on employees' intrinsic ...
167 citations
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TL;DR: It is shown that the band structure modulation with lattice strain is strongly dependent on the crystal orientation and diameter of Si NWs, and the origin of this strain dependence based on the band features of bulk silicon and the wave functions of SiNWs is discussed.
Abstract: One of the major challenges toward Si nanowire (SiNW) based photonic devices is controlling the electronic band structure of the Si nanowire to obtain a direct band gap. Here, we present a new strategy for controlling the electronic band structure of Si nanowires. Our method is attributed to the band structure modulation driven by uniaxial strain. We show that the band structure modulation with lattice strain is strongly dependent on the crystal orientation and diameter of SiNWs. In the case of [100] and [111] SiNWs, tensile strain enhances the direct band gap characteristic, whereas compressive strain attenuates it. [110] SiNWs have a different strain dependence in that both compressive and tensile strain make SiNWs exhibit an indirect band gap. We discuss the origin of this strain dependence based on the band features of bulk silicon and the wave functions of SiNWs. These results could be helpful for band structure engineering and analysis of SiNWs in nanoscale devices.
167 citations
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19 Jun 2003TL;DR: In this article, a method of manufacturing an inorganic nanotube using carbon nanotubes (CNT) as a template was proposed. But this method requires the CNT to be removed from the template to obtain the inorganic material on the template.
Abstract: A method of manufacturing an inorganic nanotube using a carbon nanotube (CNT) as a template, includes preparing a template on which a CNT or a CNT array is formed, forming an inorganic thin film on the CNT by depositing an inorganic material on the template using atomic layer deposition (ALD), and removing the CNT to obtain an inorganic nanotube or an inorganic nanotube array, respectively.
167 citations
Authors
Showing all 134111 results
Name | H-index | Papers | Citations |
---|---|---|---|
Yi Cui | 220 | 1015 | 199725 |
Hyun-Chul Kim | 176 | 4076 | 183227 |
Hannes Jung | 159 | 2069 | 125069 |
Yongsun Kim | 156 | 2588 | 145619 |
Yu Huang | 136 | 1492 | 89209 |
Robert W. Heath | 128 | 1049 | 73171 |
Shuicheng Yan | 123 | 810 | 66192 |
Shi Xue Dou | 122 | 2028 | 74031 |
Young Hee Lee | 122 | 1168 | 61107 |
Alan L. Yuille | 119 | 804 | 78054 |
Yang-Kook Sun | 117 | 781 | 58912 |
Sang Yup Lee | 117 | 1005 | 53257 |
Guoxiu Wang | 117 | 654 | 46145 |
Richard G. Baraniuk | 107 | 770 | 57550 |
Jef D. Boeke | 106 | 456 | 52598 |