Institution
Samsung
Company•Seoul, South Korea•
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.
Papers published on a yearly basis
Papers
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13 Apr 2010TL;DR: A policy enforcement framework for Android that allows a user to selectively grant permissions to applications as well as impose constraints on the usage of resources and an extended package installer that allows the user to set these constraints through an easy-to-use interface is presented.
Abstract: Android is the first mass-produced consumer-market open source mobile platform that allows developers to easily create applications and users to readily install them. However, giving users the ability to install third-party applications poses serious security concerns. While the existing security mechanism in Android allows a mobile phone user to see which resources an application requires, she has no choice but to allow access to all the requested permissions if she wishes to use the applications. There is no way of granting some permissions and denying others. Moreover, there is no way of restricting the usage of resources based on runtime constraints such as the location of the device or the number of times a resource has been previously used. In this paper, we present Apex -- a policy enforcement framework for Android that allows a user to selectively grant permissions to applications as well as impose constraints on the usage of resources. We also describe an extended package installer that allows the user to set these constraints through an easy-to-use interface. Our enforcement framework is implemented through a minimal change to the existing Android code base and is backward compatible with the current security mechanism.
641 citations
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12 Jun 2008TL;DR: In this paper, a touch sensor equipped liquid crystal display device includes a first substrate having an image display device, a second substrate having a plurality of column spacers, a liquid crystal layer disposed between the first and second substrates.
Abstract: A touch sensor equipped liquid crystal display device includes a first substrate having an image display device, a second substrate having a plurality of column spacers, a liquid crystal layer disposed between the first and second substrates. A touch sensor is driven by pressing on the second substrate. A gap maintaining region combines with the column spacers to maintain a gap between the first and second substrates, and a sensing region formed lower than the gap maintaining region achieves a sensing of the touch sensor responsive to the pressing on the second substrate.
640 citations
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29 Nov 2005TL;DR: In this paper, a secondary battery module including a plurality of unit batteries that each include a cap plate and a case connected to either one of a positive electrode and a negative electrode of an electrode assembly and an electrode terminal connected to the other of the positive and negative electrodes is described.
Abstract: A secondary battery module including a plurality of unit batteries that each include a cap plate and a case connected to either one of a positive electrode and a negative electrode of an electrode assembly and an electrode terminal connected to the other of the positive electrode and negative electrode, wherein the electrode terminal protrudes outside of a unit battery by passing through the cap plate covering the case, and a connector having a first end and a second end, wherein the first end fits on the electrode terminal of one of the unit batteries and is screw-engaged to the electrode terminal by a nut and the second end is connected to the case of another adjacent unit battery.
638 citations
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TL;DR: In this article, the gallium-doped n-type ZnO with a thickness of 1.5 lm was grown on a c-Al2O3 substrate and showed excellent current-rectifying behavior with a threshold voltage of 3.2 V and an EL emission peak at 380 nm at room temperature.
Abstract: to improve the structural properties of n- and p-type ZnO compared to previous studies. [7] In addition, a thermal annealing process was carried out to activate the phosphorus dopants in p-type ZnO and improve the electrical and optical properties of the ZnO layers. The LED showed excellent current-rectifying behavior with a threshold voltage of 3.2 V and an EL emission peak at 380 nm at room temperature. The UV EL emission spectrum was in good agreement with the room-temperature photoluminescence (PL) spectrum of the p-type ZnO used in the LED. Furthermore, the near-bandedge emission was increased and the deep-level emission was decreased when (Mg,Zn)O alloy layers were introduced as energy barrier layers between n-type and p-type ZnO films to confine the carrier recombination process to the high-quality n-type ZnO film. A schematic diagram of the p–n homojunction ZnO LED is shown in Figure 1. The gallium-doped n-type ZnO with a thickness of 1.5 lm was grown on a c-Al2O3 substrate. It
624 citations
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TL;DR: The fabrication of single-walled carbon nanotube (SWNT) network field-effect transistors, deposited from solution, possessing controllable topology and an on/off ratio as high as 900,000, is reported.
Abstract: To find use in electronics, single-walled carbon nanotubes need to be efficiently separated by electronic type and aligned to ensure optimal and reproducible electronic properties. We report the fabrication of single-walled carbon nanotube (SWNT) network field-effect transistors, deposited from solution, possessing controllable topology and an on/off ratio as high as 900,000. The spin-assisted alignment and density of the SWNTs are tuned by different surfaces that effectively vary the degree of interaction with surface functionalities in the device channel. This leads to a self-sorted SWNT network in which nanotube chirality separation and simultaneous control of density and alignment occur in one step during device fabrication. Micro-Raman experiments corroborate device results as a function of surface chemistry, indicating enrichment of the specific SWNT electronic type absorbed onto the modified dielectric.
622 citations
Authors
Showing all 134111 results
Name | H-index | Papers | Citations |
---|---|---|---|
Yi Cui | 220 | 1015 | 199725 |
Hyun-Chul Kim | 176 | 4076 | 183227 |
Hannes Jung | 159 | 2069 | 125069 |
Yongsun Kim | 156 | 2588 | 145619 |
Yu Huang | 136 | 1492 | 89209 |
Robert W. Heath | 128 | 1049 | 73171 |
Shuicheng Yan | 123 | 810 | 66192 |
Shi Xue Dou | 122 | 2028 | 74031 |
Young Hee Lee | 122 | 1168 | 61107 |
Alan L. Yuille | 119 | 804 | 78054 |
Yang-Kook Sun | 117 | 781 | 58912 |
Sang Yup Lee | 117 | 1005 | 53257 |
Guoxiu Wang | 117 | 654 | 46145 |
Richard G. Baraniuk | 107 | 770 | 57550 |
Jef D. Boeke | 106 | 456 | 52598 |