Samsung

About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.

Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor

Abstract: A method of forming a metal layer having excellent thermal and oxidation resistant characteristics using atomic layer deposition is provided. The metal layer includes a reactive metal (A), an element (B) for the amorphous combination between the reactive metal (A) and nitrogen (N), and nitrogen (N). The reactive metal (A) may be titanium (Ti), tantalum (Ta), tungsten (W), zirconium (Zr), hafnium (Hf), molybdenum (Mo) or niobium (Nb). The amorphous combination element (B) may be aluminum (Al), silicon (Si) or boron (B). The metal layer is formed by alternately injecting pulsed source gases for the elements (A, B and N) into a chamber according to atomic layer deposition to thereby alternately stack atomic layers. Accordingly, the composition ratio of a nitrogen compound (A—B—N) of the metal layer can be desirably adjusted just by appropriately determining the number of injection pulses of each source gas. According to the composition ratio, a desirable electrical conductivity and resistance of the metal layer can be accurately obtained. The atomic layers are individually deposited, thereby realizing excellent step coverage even in a complex and compact region. A metal layer formed by atomic layer deposition can be employed as a barrier metal layer, a lower electrode or an upper electrode in a semiconductor device.

Phase stability, electrochemical stability and ionic conductivity of the Li10±1MP2X12 (M = Ge, Si, Sn, Al or P, and X = O, S or Se) family of superionic conductors

Abstract: We present an investigation of the phase stability, electrochemical stability and Li+ conductivity of the Li10±1MP2X12 (M = Ge, Si, Sn, Al or P, and X = O, S or Se) family of superionic conductors using first principles calculations. The Li10GeP2S12 (LGPS) superionic conductor has the highest Li+ conductivity reported to date, with excellent electrochemical performance demonstrated in a Li-ion rechargeable battery. Our results show that isovalent cation substitutions of Ge4+ have a small effect on the relevant intrinsic properties, with Li10SiP2S12 and Li10SnP2S12 having similar phase stability, electrochemical stability and Li+ conductivity as LGPS. Aliovalent cation substitutions (M = Al or P) with compensating changes in the Li+ concentration also have a small effect on the Li+ conductivity in this structure. Anion substitutions, however, have a much larger effect on these properties. The oxygen-substituted Li10MP2O12 compounds are predicted not to be stable (with equilibrium decomposition energies >90 meV per atom) and have much lower Li+ conductivities than their sulfide counterparts. The selenium-substituted Li10MP2Se12 compounds, on the other hand, show a marginal improvement in conductivity, but at the expense of reduced electrochemical stability. We also studied the effect of lattice parameter changes on the Li+ conductivity and found the same asymmetry in behavior between increases and decreases in the lattice parameters, i.e., decreases in the lattice parameters lower the Li+ conductivity significantly, while increases in the lattice parameters increase the Li+ conductivity only marginally. Based on these results, we conclude that the size of the S2− is near optimal for Li+ conduction in this structural framework.

Organic light emitting diode display

Abstract: An organic light emitting diode display includes a substrate, a display portion on the substrate, and a sealing substrate fixed on the substrate and sealingly engaging the display portion. The sealing substrate is fixed by an adhesive layer that surrounds the display portion. The sealing substrate includes a composite member, at least one conductive portion, and an insulation sheet. The composite member includes a resin base layer and a plurality of carbon fibers. The at least one conductive portion extends over inner and outer sides of the composite member and penetrates the composite member. The at least one conductive portion includes a double-layered structure having a metal foil layer and a plating layer. The insulation sheet is on the outer side of the composite member and the insulation sheet covers the at least one conductive portion

Large-scale synthesis of high-quality hexagonal boron nitride nanosheets for large-area graphene electronics.

Abstract: Hexagonal boron nitride (h-BN) has received a great deal of attention as a substrate material for high-performance graphene electronics because it has an atomically smooth surface, lattice constant similar to that of graphene, large optical phonon modes, and a large electrical band gap. Herein, we report the large-scale synthesis of high-quality h-BN nanosheets in a chemical vapor deposition (CVD) process by controlling the surface morphologies of the copper (Cu) catalysts. It was found that morphology control of the Cu foil is much critical for the formation of the pure h-BN nanosheets as well as the improvement of their crystallinity. For the first time, we demonstrate the performance enhancement of CVD-based graphene devices with large-scale h-BN nanosheets. The mobility of the graphene device on the h-BN nanosheets was increased 3 times compared to that without the h-BN nanosheets. The on–off ratio of the drain current is 2 times higher than that of the graphene device without h-BN. This work suggests...