Samsung

About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.

Contrast enhancement using brightness preserving bi-histogram equalization

Abstract: Histogram equalization is widely used for contrast enhancement in a variety of applications due to its simple function and effectiveness. Examples include medical image processing and radar signal processing. One drawback of the histogram equalization can be found on the fact that the brightness of an image can be changed after the histogram equalization, which is mainly due to the flattening property of the histogram equalization. Thus, it is rarely utilized in consumer electronic products such as TV where preserving the original input brightness may be necessary in order not to introduce unnecessary visual deterioration. This paper proposes a novel extension of histogram equalization to overcome such a drawback of histogram equalization. The essence of the proposed algorithm is to utilize independent histogram equalizations separately over two subimages obtained by decomposing the input image based on its mean with a constraint that the resulting equalized subimages are bounded by each other around the input mean. It is shown mathematically that the proposed algorithm preserves the mean brightness of a given image significantly well compared to typical histogram equalization while enhancing the contrast and, thus, provides a natural enhancement that can be utilized in consumer electronic products.

Li-alloy based anode materials for Li secondary batteries.

Abstract: Research to develop alternative electrode materials with high energy densities in Li-ion batteries has been actively pursued to satisfy the power demands for electronic devices and hybrid electric vehicles. This critical review focuses on anode materials composed of Group IV and V elements with their composites including Ag and Mg metals as well as transition metal oxides which have been intensively investigated. This critical review is devoted mainly to their electrochemical performances and reaction mechanisms (313 references).

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

Abstract: Unlike graphene, the existence of bandgaps (1–2 eV) in the layered semiconductor molybdenum disulphide, combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single-layer molybdenum disulphide field-effect transistors in low-power switching devices. However, the complicated process of fabricating single-layer molybdenum disulphide with an additional high-k dielectric layer may significantly limit its compatibility with commercial fabrication. Here we show the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors to demonstrate a compelling case for their applications in thin-film transistors. Our multilayer molybdenum disulphide field-effect transistors exhibited high mobilities (>100 cm2 V−1 s−1), near-ideal subthreshold swings (~70 mV per decade) and robust current saturation over a large voltage window. With simulations based on Shockley's long-channel transistor model and calculations of scattering mechanisms, these results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors. Molybdenum disulphide offers some tantalizing advantages over graphene as a material with which to fabricate field-effect transistors. Kimet al. present a comprehensive study of field-effect transistors made from multilayer samples of MoS2and find that they can achieve high carrier mobilities.